Since there is no gate current, ID = IS. v) The JFET must operate between VGS and VGS (off). This is the gate-to-source voltage where the channel is completely cut off and the drain current becomes zero.
Advantages of JFET
Parameters of JFET
It is the ratio of the change in drain current (ΔID) to the change in gate-source voltage (ΔVGS) at constant drain-source voltage, i.e. is the ratio of the change in drain-source voltage (ΔVDS) to the change in gate-source voltage (ΔVGS) at constant drain current i.e.
Relation Among JFET Parameters
It is the ratio of the change in drain-source voltage (ΔVDS) to the change in drain current (ΔID) at constant gate-source voltage, eg, if a change in drain voltage of 2 V produces a change in current of drain of 0.02 mA, then, a.c.
The large input impedance of a JFET allows a high degree of isolation between input and output. When the value of gmo is not available, you can approximately calculate gmo using the following relation.
JFET Biasing
JFET Biasing by Bias Battery
Self-Bias for JFET
Since the JFET parameters are usually known, the ID of the null signal can be calculated from the following relation. Note that the gate resistor *RG has no effect on the bias because the voltage across it is zero. It is often desirable to move the JFET near the middle of its transfer characteristic curve, where ID = IDSS/2.
When signal is applied, the center bias allows a maximum amount of drain current swing between IDSS and 0. It can be proved that when VGS = VGS(af) / 3.4, center bias conditions for ID are obtained. To set the drain voltage at midpoint (VD = VDD/2), choose a value of RD to produce the desired voltage drop.
JFET with Voltage-Divider Bias
JFET Connections
Practical JFET Amplifier
Therefore, a simple way to analyze the effect of a JFET amplifier is to divide the circuit into two parts, i.e. Note that biasing is provided by voltage divider circuits. equivalent circuit for a JFET amplifier, DC only. it is assumed that no signal is applied. Since direct current cannot be taken into account, i.e. it is assumed that no signal is applied. current through a capacitor, all the capacitors look like open circuits in direct current. It therefore follows that to draw the d.c. equivalent circuit, the following two steps are applied to the JFET amplifier circuit:. ii) Open all the capacitors.
Applying these two steps to the JFET amplifier circuit shown in Fig. equivalent circuit shown in Fig. We can easily use the d.c. currents and voltages from this circuit. equivalent circuit of a JFET amplifier, only a.c. conditions must be considered- a JFET amplifier, only a.c. conditions must be considered. voltage is not important for such a circuit and can be considered zero. commonly used to connect the a.c. The designer deliberately chooses capacitors large enough to appear as short circuits to the AC current. It therefore follows that to make the a.c. equivalent circuit, the following two steps are applied to the JFET amplifier circuit:. ii) Short all the capacitors.
D.C. Load Line Analysis
As for a given circuit, VDD and (RD + RS) are constant, so exp. i) is a first degree equation and can be represented by a straight line on the drain characteristics.
Voltage Gain of JFET Amplifier
If the source resistance RS is very small compared to RG, find the voltage gain of the amplifier. The total AC load (ie RAC) in the drain circuit consists of the parallel combination of RD and RL ie.
Voltage Gain of JFET Amplifier (With Source Resistance R S )
So with unbridged RS the gain is = 1.85, while with RS bypassed by a capacitor the gain is 6.
JFET Applications
A buffer amplifier is a gain stage that isolates the previous stage from the next stage. Because of its high input impedance and low output impedance, a JFET can act as an excellent buffer amplifier (see Figure 19.41). This ensures that all output from the buffer reaches the input of the second stage.
However, the high input impedance of JFET is especially valuable in phase shift oscillators to minimize the loading effect. The JFET will not generate significant amount of noise and is therefore useful as an RF amplifier. Since JFET is a voltage controlled device, it will respond well to low current signal supplied by the antenna.
Metal Oxide Semiconductor FET (MOSFET)
Types of MOSFETs
The E-MOSFET has no channel between source and construction is similar to that of D-MOSFET. Note that the substrate extends all the way to the SiO2 layer so that no channel exists. In short, the construction of E-MOSFET is quite similar to that of the D-MOSFET except for the absence of a channel between the drain and source terminals.
Since the gate is isolated from the channel, the MOSFET is sometimes called an insulated-gate FET (IGFET).
Symbols for D-MOSFET
Electrons flowing from source (when the drain is positive w.r.t. source) must pass through this narrow channel. The drain line comes out of the top of the channel and the source line connects to the bottom. The arrow is on the substrate and points to the n-material, therefore we have n-channel D-MOSFET.
It is a common practice to connect the substrate to the source internally as shown in fig. The n-type substrate narrows the channel between the source and the drain so that only a small passage remains on the left side. Conduction takes place by the flow of holes from source to drain through this narrow channel.
Circuit Operation of D-MOSFET
Since the gate is positive, it induces negative charges on the n-channel as shown in Fig. Thus by changing the positive voltage at the gate, we can change the conductivity of the channel. Because operation with a positive gate depends on increasing the channel conductance, positive gate operation is called enhancement mode.
In a D-MOSFET, the source to drain current is controlled by the electric field of capacitor formed at the gate. ii) The gate of JFET acts as a reverse-biased diode while the gate of a D-MOSFET acts like a capacitor. For this reason it is possible to operate D-MOSFET with positive or negative gate voltage. iii) Since the gate of D-MOSFET forms a capacitor, therefore negligible gate current flows or. positive or negative voltage is applied to the gate. iv). The extremely small dimensions of the oxide layer under the gate terminal result in a very low capacitance and the D-MOSFET therefore has a very low input capacitance.
D-MOSFET Transfer Characteristic
We thus have a number of VGS – ID readings so that the transconductance curve for the device can be easily plotted.
Transconductance and Input Impedance of D-MOSFET
D-MOSFET Biasing
Note that the source resistance (RS) is not needed for the D-MOSFET zero-bias circuit.
Common-Source D-MOSFET Amplifier
When signal (Vin) is applied, Vgs swings above and below its zero value (Q d.c. value of VGS = 0V), producing a swing in drain current Id. i). This fact enables MOSFET to increase the strength of a weak signal; thus acting as an amplifier. ii) During the positive half cycle of the signal, the positive voltage on the gate increases and produces the enhancement mode. This increases the channel conductance and thus the drain current. iii) During the negative half cycle of the signal, the positive voltage on the gate decreases and produces depletion mode.
The result of the above action is that a small change in gate voltage produces a large change in drain current.
D-MOSFETs Versus JFETs
E-MOSFET
The E-MOSFET is thus turned ON and drain current ID starts to flow from the source to the drain. When VGS is equal to VGS (de), the E-MOSFET is turned ON and the induced channel conducts drain current from the source to the drain. If the value of VGS decreases [not less than VGS (de)], the channel becomes narrower and ID will decrease.
Note that this curve is different from the transconductance curve for n-channel JFET or n-channel D-MOSFET. To draw the transconductance curve for the device, we will determine some points for the curve by changing the value of VGS and noting the corresponding values of ID. We can therefore plot the transconductance curve for the E-MOSFET from these VGS/ID points.
E-MOSFET Biasing Circuits
The constant K depends on the particular E-MOSFET and its value is determined from the following equation. Any data sheet for an E-MOSFET will include the current ID(on) and the voltage VGS(on) for a point well above the threshold voltage as shown in fig. Since the gate resistance is super high, no current will flow into the gate circuit (ie IG = 0).
Since there is no voltage drop across RG, the gate has the same potential as the drain. The value of the drain-source voltage VDS for the drain feedback circuit is VDS = VDD – ID RD.
D-MOSFETs Versus E-MOSFETs
MULTIPLE-CHOICE QUESTIONS
In a p-channel JFET, there are charge carriers. iii) electrons and holes (iv) none of the above. If the reverse bias across the JFET gate is increased then the conduction channel width .. i) decreases (ii) increases (iii) remains the same (iv) none of the above. Common basic pnp transmission configuration. i) common source configuration (ii) common drain configuration (iii) common port configuration (iv) none of the above.
If the gate of a JFET is made less negative, . width of the conducting channel.. i) remains the same (ii) decreases (iii) increases (iv) none of the above. An n-channel D-MOSFET with a positive VGS operates in .. i) the depletion mode (ii) the enhancement mode (iii) cutoff (iv) saturation. If the source bypass capacitor is removed, .. i) the voltage gain will increase (ii) the transconductance will increase (iii) the voltage gain will decrease (iv) the Q point will shift.
Answers to Multiple-Choice Questions
The constant current region of a JFET lies between .. i) cutoff and saturation (ii) cutoff and pinch-off (iii) 0 and IDSS. iv) pinching and breakdown. At termination, the JFET channel is.. ii) completely occluded by the depletion region. iii) extremely narrow (iv) reverse bias. A MOSFET differs from a JFET mainly because.. ii) the MOSFET has two gates (iii) the JFET has a p-n junction (iv) none of the above.
Chapter Review Topics
Problems
Sketch the transfer curve for a p-channel JFET with IDSS = 4 mA and VP = 3 V. Determine which mode each D-MOSFET is in in the figure i) Depletion (ii) Enhancement (iii) Zero bias].
Discussion Questions
