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THREE-VALLEY MODEL OF ELECTRON TRANSPORT PROPERTIES IN BULK GASB AND GA0.5SB0.5AS AT HIGH ELECTRIC FIELD 21

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Table 1: Material parameter selections for GaSb and Ga0.5Sb0.5As [3-5].
Figure 1: Calculated electron steady-state electron drift velocity in bulk GaSb and Ga0.5Sb0.5As
Figure 2: Comparison of the valley occupancies and their electron energies in GaSb and
Figure 3: Calculated electron steady-state drift velocity in bulk GaSb and Ga0.5Sb0.5As as a
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THREE-VALLEY MODEL OF ELECTRON TRANSPORT PROPERTIES IN BULK GASB AND GA0.5SB0.5AS AT HIGH ELECTRIC FIELD 21

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