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Optimization of parameters for generating nitrogen plasma in plasma-assisted MOCVD growth of InGaN thin films

(Article) (Open Access)

, , , ,

Physics of Electronic Materials Division, Department of Physics, Faculty of Mathematics and Natural Sciences (FMIPA), Institute of Technology Bandung (ITB), Jl. Ganesha 10, Bandung, 40132, Indonesia

Department of Physics, University of Diponegoro, Jl. Prof. Soedharto, SH, Tembalang, Semarang, 50275, Indonesia Department of Physics, State University of Semarang, Sekaran, Gunungpati, Semarang, 50229, Indonesia

Abstract

The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized using optical emission spectroscopy, and the plasma is dominated by excited molecular nitrogen, which emits in the range 300-420 nm. The emission intensity of the plasma significantly depends on the flow rate of nitrogen gas and heater temperature and are optimally 70 SCCM and 650 °C, respectively. A further increase in these parameters results in a decrease in the intensity of the nitrogen plasma emission. An optimal flow rate and heater temperature are used to grow InGaN thin films on c-sapphire substrates. InGaN thin films grown with a TMIn vapor concentration (x ) of 0%, 50%, and 100% at a growth temperature of 650 °C are highly oriented to the (0002) plane in a hexagonal structure. The film grown with a vapor concentration of 50% has an indium concentration of 55% and no indication of phase separation. Increasing the growth temperature above 650 °C results in a decrease in the growth rate. © 2019 Author(s).

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Open Access AIP Advances

Volume 9, Issue 11, 1 November 2019, Article number 115304

Arifin, P.^a  Sutanto, H.^b Subagio, A.^b Sugianto, S.^c Mustajab, M.A.^a 

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Semiconductor quantum wells | Gallium nitride | Indium content

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In

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Ga

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In CH3 H3C

CH3

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Ga CH3 H3C

CH3

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References (23)

Engineering controlled terms:

Gallium alloys Growth rate Growth temperature III-V semiconductors Indium alloys Metallorganic chemical vapor deposition Optical emission spectroscopy Phase separation Sapphire Semiconductor alloys Thin films

Engineering uncontrolled terms

Emission intensity Heater temperatures Hexagonal structures Indium concentration Molecular nitrogen Nitrogen sources Optimization of parameters Vapor concentrations

Engineering main heading:

Nitrogen plasma

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ISSN: 21583226 Source Type: Journal Original language: English

DOI: 10.1063/1.5126943 Document Type: Article

Publisher: American Institute of Physics Inc.

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1

InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

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Indium incorporation above 800°c during metalorganic vapor phase epitaxy of ingan

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Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

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Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

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Authors Keywords ▻

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Phase separation in InGaN grown by metalorganic chemical vapor deposition

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Solid phase immiscibility in GaInN

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Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations

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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH

₃

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Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN

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Timmermans, E.A.H., Jonkers, J., Rodero, A., Quintero, M.C., Sola, A., Gamero, A., Schram, D.C., (...), Van Der Mullen, J.A.M.

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Arifin, P.; Physics of Electronic Materials Division, Department of Physics, Faculty of Mathematics and Natural Sciences (FMIPA), Institute of Technology Bandung (ITB), Jl. Ganesha 10, Bandung, Indonesia;

email:

© Copyright 2019 Elsevier B.V., All rights reserved.

19

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The energetics of the GaN MBE reaction: A case study of meta-stable growth

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pepen@fi.itb.ac.id

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Cites per document Year Value

Cites / Doc. (4 years) 2013 1.707 Cites / Doc. (4 years) 2014 1.820 Cites / Doc. (4 years) 2015 1.649 Cites / Doc. (4 years) 2016 1.703 Cites / Doc. (4 years) 2017 1.766 Cites / Doc. (4 years) 2018 1.774 Cites / Doc (3 years) 2011 0 000

self-citations received by a journal's published

documents during the three previous years.

Journal Self-citation is de ned as the number of citation from a journal citing article to articles published by the same journal.

Cites Year Value

External Cites per Doc Cites per Doc Evolution of the number of total citation per document and external citation per document (i.e. journal self- citations removed) received by a journal's published documents during the three previous years. External citations are calculated by subtracting the number of self-citations from the total number of citations received by the journal’s documents.

Cit Y V l

% International Collaboration

International Collaboration accounts for the articles that have been produced by researchers from several countries. The chart shows the ratio of a journal's documents signed by researchers from more than one country; that is including more than one country address.

Year International Collaboration

2011 20.93

2012 23 30

Citable documents Non-citable documents

Not every article in a journal is considered primary research and therefore "citable", this chart shows the ratio of a journal's articles including substantial research (research articles, conference papers and reviews) in three year windows vs. those documents other than research articles, reviews and conference papers.

Documents Year Value

N it bl d t 2011 0

Cited documents Uncited documents Ratio of a journal's items, grouped in three years windows, that have been cited at least once vs. those not cited during the following year.

Documents Year Value

Uncited documents 2011 0 Uncited documents 2012 112 Uncited documents 2013 242 Uncited documents 2014 354

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Javier E. Garay

University of California San Diego, San Diego, CA, USA

Javier E. Garay is a professor in the department of Mechanical and Aerospace

Engineering and the Materials Science and Engineering Program at the Jacobs School

of Engineering at University of California, San Diego (UCSD). He received his B.S. in Mechanical Engineering, his M.S. and Ph.D in Materials Science and Engineering all from the University of California, Davis. During his PhD studies, he also worked at the Lawrence Livermore National Laboratory where he studied material defects using positron annihilation spectroscopy. Prior to his position at UCSD, he was a professor at UC Riverside where he also served as Chair of the Materials Science & Engineering Program.

As the director of the Advanced Material Processing and Synthesis (AMPS) Lab at UCSD, Professor Garay focuses his research on materials property measurements, the integration of materials in devices with application in optical devices, magnetic

devices, thermal energy storage/ management, and materials synthesis and processing with an emphasis on designing the micro/nanostructure of bulk

materials/thin films for property optimization. He is also particularly interested in understanding the role of the length scale of nano-/ micro-structural features on light, heat and magnetism.

A. T. Charlie Johnson Jr.

University of Pennsylvania, Philadelphia, PA, USA

A.T. Charlie Johnson is a professor of physics in the Department of Physics and Astronomy at the University of Pennsylvania. He received his B.S. in physics from Stanford University and his Ph.D. in physics from Harvard University. He did

postdoctoral fellowships at the Delft University of Technology (Applied Physics) and NIST (Cryoelectronic Metrology). His honors include the Christian R. and Mary F.

Lindback Foundation Award for distinguished teaching at Penn, the Jack Raper Outstanding Technology Directions Paper Award of the International Solid State Circuit Conference, an Alfred P. Sloan Research Fellowship, and a Packard Fellowship for Science and Engineering.

Dr. Johnson’s research is focused on the nano-scale transport properties (charge, energy, spin, etc.) of nanostructures and single molecules, including carbon nanotubes, graphene, DNA, synthetic proteins, and other biomolecules. He is

particularly interested in the physical properties of hybrid nanostructures and their use

in molecular sensing. Other research interests include the development of scanning

probe techniques for electronic property measurement of nanomaterials and

nanodevices, molecular electronics and nanogaps, local probes of nanoscale systems, and nanotube and nanowire electronics.

Ben Slater

University College London (UCL), London, United Kingdom

Ben Slater is a reader at UCL Chemistry. He received his BSc in chemistry from the University of Nottingham and was awarded his PhD at the University of Reading. He did postdoctoral work at the Royal Institution of Great Britain (Ri) and became an assistant director of the Davy Faraday Research Laboratory at the Ri in 1999. He joined UCL Chemistry in 2007 and was awarded the Royal Society of Chemistry Barrer prize in 2008.

Dr. Slater’s research is focused on using atomistic computer simulation to understand and predict the structure and properties of materials. He has published extensively in the area of porous materials (including zeolites and metal-organic frameworks) and water ices. He has a particular interest in defects in materials and surface mediated processes, such as crystal growth.

Masaaki Tanaka

The University of Tokyo, Tokyo, Japan

Masaaki Tanaka is a professor at the Department of Electrical Engineering &

Information Systems Graduate School of Engineering, University of Tokyo. He received his Ph.D. in electronic engineering from the University of Tokyo in 1989. In 1992, he joined Bell Communications Research (Bellcore) at Red Bank, New Jersey, as a visiting research scientist. Since 1994, he has been at the University of Tokyo as an associate professor and professor.

Dr. Tanaka's main research field is spin electronics (“spintronics"), in which the spin degrees of freedom are used in artificially synthesized materials. Among the areas of his specific research are epitaxial growth, structural characterizations,

electronic/optical/magnetic/spin-related properties (in particular, spin-dependent

transport and mageto-optical properties), and device applications of various new

structures. His research on structures and devices includes ferromagnetic metal /

semiconductor hybrid structures, III-V-based magnetic semiconductors and their

heterostructures, group-IV-based magnetic semiconductors, ferromagnetic

nanoparticles and semiconductor hybrid heterostructures, delta doping of magnetic impurities in semiconductor heterostructures, and new spin transistors (e.g., spin- MOSFET) and reconfigurable logic devices.

Enge G. Wang Peking University, Beijing, P. R. China

Professor Enge G. Wang is a professor of physics at Peking University and an academician at the Chinese Academy of Sciences.

Dr. Wang’s research focuses on surface physics; the approach is a combination of atomistic simulation of nonequilibrium growth, chemical vapor deposition of light- element nanomaterials, and water behaviors in confinement system. He and his coworkers also predicted a three-dimensional Ehrlich-Schwoebel barrier, which attracted News and Views in Nature (June 2002). Another contribution is the model proposal and experimental validation of a true upward atomic diffusion. This was reported in Physics News Update in June 2003 and News and Views in Nature as well as Science Week in June 2004.

His work on water-surface coupling and the strength of hydrogen bonds at the

interfaces provides a fundamental understanding of water on surface at the molecular level.

Associate Editors:

Saman Alavi

University of Ottawa, Ottawa, Ontario, Canada Dario Arena

University of South Florida, Tampa, FL, USA Ismaila Dabo

The Pennsylvania State University, University Park, PA, USA Christophe Detavernier

Universiteit Gent, Gent, Belgium

Mingdong Dong

Aarhus University, Aarhus, Denmark Shridhar R. Gadre

Indian Institute of Technology Kanpur, Kanpur, India Fei Gao

University of Michigan, Ann Arbor, MI, USA Michael Keidar

George Washington University, Washington D. C., USA Michael Kiessling

Rutgers University, Piscataway, NJ Jyotsana Lal

Argonne National Laboratory, Argonne, IL Dattatray Late

AUM, Centre for Nanoscience and Nanotechnology, Mumbai, India Davide Massarotti

Universita' degli studi di Napoli Federico II, Napoli, Italy Marian Paluch

University of Silesia, Katowice, Poland Ras B. Pandey

University of Southern Mississippi, Hattiesburg, MS Rossana Pasquino

Università degli Studi di Napoli Federico II, Napoli, Italy Wilfrid Prellier

Laboratoire CRISMAT, Caen, France Alfons Schulte

University of Central Florida, Orlando, FL Takasumi Tanabe

Keio University, Yokohama, Japan

Editors of Applied Physics Letters, Journal of Applied Physics, The Journal of Chemical

Physics, APL Bioengineering, APL Materials, APL Photonics, Biomicrofluidics, Chaos,

Journal of Mathematical Physics, Journal of Renewable and Sustainable Energy,

Physics of Fluids, Physics of Plasmas, and Review of Scientific Instruments may act as

Guest Editors for manuscripts transferred to AIP Advances.

11/30/2019 AIP Advances: Vol 9, No 11

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Open . November 2019

Molecular dynamics simulation of dielectric barrier discharge–photocatalyst synergistic treatment of volatile organic compounds

Yihan Wang, Tong Zhao, Li Zhang, Liang Zou and Yuantao Zhang AIP Advances 9, 115208 (2019); https://doi.org/10.1063/1.5117253

Open . November 2019

Electronic transport and spatial current patterns of 2D electronic system: A recursive Green’s function method study

X. W. Zhang and Y. L. Liu

AIP Advances 9, 115209 (2019); https://doi.org/10.1063/1.5130534

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Open . November 2019

Mode transitions of a helium dielectric barrier discharge from Townsend, normal glow, to abnormal glow with varying voltage rising time

Kun Gao, Rui Liu, Pengying Jia, Chenhua Ren, Kaiyue Wu, Xingran He and Xuechen Li AIP Advances 9, 115210 (2019); https://doi.org/10.1063/1.5119143

Open . November 2019

Thickness dependence of domain size in 2D ferroelectric CuInP S nanoflakes

Liufang Chen, Yongqiang Li, Chuanfu Li, Hanwen Wang, Zheng Han, He Ma, Guoliang Yuan, Lin Lin, Zhibo Yan, Xiangping Jiang and Jun-Ming Liu

AIP Advances 9, 115211 (2019); https://doi.org/10.1063/1.5123366

Open . November 2019

Decomposition characteristics of C F N/CO mixture under AC discharge breakdown

Boya Zhang, Chenwei Li, Jiayu Xiong, Ziyue Zhang, Xingwen Li and Yunkun Deng AIP Advances 9, 115212 (2019); https://doi.org/10.1063/1.5115588

Open . November 2019

Magnetic properties of MnBi bulk magnets with NaCl and C addition

Hui-Dong Qian, Jihoon Park, Jung Tae Lim, Yang Yang, Ping-Zhan Si, Jong-Woo Kim, Chul-Jin Choi and Kyung Mox Cho AIP Advances 9, 115213 (2019); https://doi.org/10.1063/1.5122677

Open . November 2019

Dynamic magneto-mechanical properties of magneto-sensitive elastomers determined using a new experimental test involving forced longitudinal vibration

Wei Gao and Xingzhe Wang

AIP Advances 9, 115214 (2019); https://doi.org/10.1063/1.5113821 SHOW ABSTRACT 

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Open . November 2019

Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature

Md. Earul Islam, Kazuki Hayashida and Masashi Akabori AIP Advances 9, 115215 (2019); https://doi.org/10.1063/1.5126242

Open . November 2019

The decomposition mechanism of C F N-Cu gas mixtures

Yuwei Fu, Xiaohua Wang, Aijun Yang, Mingzhe Rong and Feng Zhu AIP Advances 9, 115216 (2019); https://doi.org/10.1063/1.5130925

Open . November 2019

Critical temperatures of real fluids from the extended law of corresponding states

Alfredo González-Calderón, Jorge Adrián Perera-Burgos and D. P. Luis AIP Advances 9, 115217 (2019); https://doi.org/10.1063/1.5123613

Open . November 2019

Solving fluid flow problems using semi-supervised symbolic regression on sparse data

Yousef M. F. El Hasadi and Johan T. Padding

AIP Advances 9, 115218 (2019); https://doi.org/10.1063/1.5116183

Open . November 2019

Endowing piezoelectric and anti-fouling properties by directly poling β-phase PVDF membranes with green diluents

Jianwen Zhang, Peng Cao, Zhaoliang Cui, Qian Wang, Fan Fan, Minghui Qiu, Xiaozu Wang, Zhaohui Wang and Yong Wang AIP Advances 9, 115219 (2019); https://doi.org/10.1063/1.5121766

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11/30/2019 AIP Advances: Vol 9, No 11

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Open . November 2019

Investigation of magnetism and magnetic structure of anti-ThCr Si -type Tb O Bi by magnetization and neutron diffraction measurements

Hideyuki Kawasoko, Kenji Ohoyama, Ryosuke Sei, Kota Matsumoto, Daichi Oka, Akinori Hoshikawa, Toru Ishigaki and Tomoteru Fukumura

AIP Advances 9, 115301 (2019); https://doi.org/10.1063/1.5126399

Open . November 2019

Structural, electronic, and electromechanical properties of MoSSe/blue phosphorene heterobilayer

Xiaobao Li, Xiaotian Wang, Weijie Hao, Changwen Mi and Huanlin Zhou AIP Advances 9, 115302 (2019); https://doi.org/10.1063/1.5122755

Open . November 2019

Combined electrokinetic manipulations of pathogenic bacterial samples in low-cost fabricated dielectrophoretic devices

Alejandro Martínez-Brenes, Karina Torres-Castro, Richard Marín-Benavides, Katherine Acuña-Umaña, Christopher Espinoza- Araya, Raquel Ramírez-Carranza, Gabriela González-Espinoza, Norman Rojas-Campos, Caterina Guzmán-Verri, Giovanni Sáenz-Arce and Leonardo Lesser-Rojas

AIP Advances 9, 115303 (2019); https://doi.org/10.1063/1.5049148

Open . November 2019

Optimization of parameters for generating nitrogen plasma in plasma-assisted Optim

MOCVD growth of InGaN thin films

Pepen Arifin, Heri Sutanto, Agus Subagio, Sugianto Sugianto and Muhammad A. Mustajab AIP Advances 9, 115304 (2019); https://doi.org/10.1063/1.5126943

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11/30/2019 AIP Advances: Vol 9, No 11

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Erratum: “A generalized self-consistent model for quantum tunneling current in dissimilar metal-insulator-metal junction” [AIP Advances 9, 085302 (2019)]

Sneha Banerjee and Peng Zhang

AIP Advances 9, 119902 (2019); https://doi.org/10.1063/1.5131580

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