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Laser cooling of an optomechanical crystal resonator to its quantum ground state of motion

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Later, Euler showed the existence of a repulsive force in the context of the longitudinal wave theory of light (credited to Huygens). In the inverse, sideband-unresolved regime (κ/4ωm>1), the speed of the off-resonance transition (red arrow in Figure 1.1) is sufficient to induce significant mode heating, making the quantum ground state of the mechanical mode out of reach.

Figure 1.1: Truncated level diagram for an optomechanical system. a, Optical frequency response of the cavity, with the red-detuned pump beam at ω ` = ω o − ω m schematically shown as a green arrow, with mechanics induced scattering sidebands at ω ` ± ω m
Figure 1.1: Truncated level diagram for an optomechanical system. a, Optical frequency response of the cavity, with the red-detuned pump beam at ω ` = ω o − ω m schematically shown as a green arrow, with mechanics induced scattering sidebands at ω ` ± ω m

Previous Work within the Painter Group

A change in the position of the end mirror modifies the cavity length, shifting the frequency of the optical cavity mode by ∆ωo=ωoˆx/Leff. In the cavity-bath mode interaction limit, the bath noise operators satisfy.

Figure 1.2: “Zipper” double nanobeam cavities. a, False-color scanning electron microscope (SEM) image of a fabricated zipper cavity with the transverse (to the long axis of the beam) electric field of the fundamental bonded optical mode superimposed (comp
Figure 1.2: “Zipper” double nanobeam cavities. a, False-color scanning electron microscope (SEM) image of a fabricated zipper cavity with the transverse (to the long axis of the beam) electric field of the fundamental bonded optical mode superimposed (comp

Semiclassical Derivations of Observed Spectra

Sideband-Resolved, Large Detuning Limit

For coherent mechanical oscillations where β0 is a simple complex number, we can write the single-sided power spectral density of the detected optical output power close to ωm (given by the autocorrelation of P(ω) =~ωo|αout|2) as. For ∆/κ >1 the measured sideband frequency (ω`+ωm) is blue of the pumping frequency, so from quantum theory we will consider normally ordered operators (ˆb†ˆb).

Modified Result for a Weak Detuned Probe

Classically, the ensemble averages of these products can be calculated for a thermal state from the Bose-Einstein distribution, given in the frequency domain by hβ∗0(ω)β0(ω))i= 1/(e~ω/kBTb −1) where kBer is the Boltzmann constant andTbis bath temperature. The transmission frequency response of the cavity at the probe frequency ω`+∆p for a fixed ∆/κ >1 is simple.

Quantum Mechanical Derivations of Dynamics

Sideband-Resolved, Mechanical Frequency Detuned Limit

We then see the importance of κ/4ωm<1 (κ/4ωm1 ideally) in the attempt to cool the phonon occupation of the mechanical state below unity. Similarly, we can say that at ∆ =ωm the optical bath is not sensitive to the zero-point fluctuations in the mechanical system.

Crystal Theory

  • Plane Waves
  • Translational Symmetry
  • Bandgaps and Localization
  • Phononic Bloch States

The range k can be further restricted to the irreducible Brillouin zone 0≤k < π/a with time-reversal symmetry (valid for all systems studied here). In principle, therefore, we can derive the phonon Bloch state (analogous to the photon Bloch state), denoted by the wavenumber, k, with the corresponding spectrum of eigenvalue solutions, ωn(k).

Figure 3.1: Bandgaps in a 1D periodic dielectric. a, Dielectric configuration for the example in the text, showing alternating dielectric slabs of ε 1 and ε 2 , each of width a/2
Figure 3.1: Bandgaps in a 1D periodic dielectric. a, Dielectric configuration for the example in the text, showing alternating dielectric slabs of ε 1 and ε 2 , each of width a/2

Index Guiding

Similar to above, we can assume a time harmonic solution and write the governing equation as. The modes below the light line have imaginary wave vector amplitudes (k2⊥ = (n2ω/c)2−kk2 < 0) in ε2, resulting in exponential decay away from the interface.

Optomechanical Coupling Rate

Moving Dielectric Boundary

Returning to the original problem and parameterizing the surface with (u, v), we can define the surface unit normal, n(u, v), at the interface ˆ ε1–ε2. Still in the local coordinate system, the electric field can be divided into components perpendicular to the boundary, E⊥, and parallel to the boundary, Ek.

Figure 3.3: Moving dielectric boundary. a, From [77], schematic showing an infinite space of permittivity ε 2 in which we place a closed volume of permittivity ε 1 (solid line) with a perturbation specified by the surface function h(α, u, v) = Q(α, u, v) ·
Figure 3.3: Moving dielectric boundary. a, From [77], schematic showing an infinite space of permittivity ε 2 in which we place a closed volume of permittivity ε 1 (solid line) with a perturbation specified by the surface function h(α, u, v) = Q(α, u, v) ·

Photoelastic Effect

The symmetry of ε and S also requires pijkl =pjikl =pjilk =pjilk, so it is convenient to use a contracted index notation (AppendixA.8) where. If not, we can construct a rotated form of the photoelastic tensor, shown in Appendix C.

Table 3.1: Photoelastic coefficients for silicon. We note that we estimate the value for λ o = 1.55 µm as somewhere between the listed values since data for that wavelength is not available.
Table 3.1: Photoelastic coefficients for silicon. We note that we estimate the value for λ o = 1.55 µm as somewhere between the listed values since data for that wavelength is not available.

Designing Nanobeams with Numerical Simulations

Unit Cell Design

Finally, the frequency tuning of d, the optical X-point, ande, the Γ-point mechanical state of interest, corresponding to change from the nominal to the defective unit cell, while keeping the kvector constant, is shown. Based on this intuition, we choose an optical mode drawn from the X symmetry point of the dielectric band and a mechanical “breathing” mode (with a shear field predominantly along their axis) drawn from the Γ point (from the highlighted bands in Figure 3.4c , f).

Figure 3.4: Nanobeam unit cell band diagrams. a, The nominal, and b, the defect unit cells of the nanobeam specified by the set of geometric (a, t, w, h x , h y )
Figure 3.4: Nanobeam unit cell band diagrams. a, The nominal, and b, the defect unit cells of the nanobeam specified by the set of geometric (a, t, w, h x , h y )

Cavity Design

For a computationally expensive fitness function with a large parameter space, a good choice of optimization algorithm is the Nelder-Mead method [91, 92]. Since the Nelder-Mead method is inherently an unbounded search algorithm, we must ensure that the .

Figure 3.5: Well function shape. A candidate well function that smoothly transitions from a nominal unit cell width a M to a defect unit cell width of a 0 = a M (1 − d).
Figure 3.5: Well function shape. A candidate well function that smoothly transitions from a nominal unit cell width a M to a defect unit cell width of a 0 = a M (1 − d).

Mechanical Quality Factor

Finally, we consider losses attributed to acoustic energy leaking into the substrate through the clamping points of the nanobeam. The 2D “cross” phononic crystal design [62] has previously demonstrated this with great success [63], and the wide tunability of the gap essentially allows the mechanical loss technique to be decoupled from the nanobeam design.

Figure 3.7: Thermoelastic damping simulation. Thermomechanical FEM simulations for the 4 GHz mechanical breathing mode at 300 K
Figure 3.7: Thermoelastic damping simulation. Thermomechanical FEM simulations for the 4 GHz mechanical breathing mode at 300 K

Nanobeam Designs

Summary of device designs and associated parameters for backaction cooling, presented in chronological order (left to right). FEM simulations corresponding to the normalized a, Ey field of the fundamental optical mode, b, displacement field,|Q|/max{|Q|}, of the fundamental breathing mode,c, surface integrand in (3.39), from which shows the individual contributions to gmb, end, volume integrand in (3.47), where the individual contributions togpe are shown.

Figure 3.10: FEM simulations of the 5G design. FEM simulations corresponding to the nor- nor-malized a, E y field of the fundamental optical mode, b, displacement field, |Q|/ max{|Q|}, of the fundamental breathing mode, c, surface integrand in (3.39), show
Figure 3.10: FEM simulations of the 5G design. FEM simulations corresponding to the nor- nor-malized a, E y field of the fundamental optical mode, b, displacement field, |Q|/ max{|Q|}, of the fundamental breathing mode, c, surface integrand in (3.39), show

Lab Procedure

Lithography Adjustments

The red line is the mapping between the realized dimensions and the dimensions of the lithographic features, and the black line shows how close the realized dimensions are to the correct dimensions. Inverting this function (Figure 4.3b–d) and entering the desired feature dimensions should then produce a lithography pattern that results in fabricated nanobeams of the correct size.

Figure 4.2: Scanning electron microscope image of a 5G device. a, Wide, angled view of a 5G device showing a suspended silicon nanobeam surrounded by a phononic shield to mitigate clamping losses
Figure 4.2: Scanning electron microscope image of a 5G device. a, Wide, angled view of a 5G device showing a suspended silicon nanobeam surrounded by a phononic shield to mitigate clamping losses

Silicon Surface Passivation

With careful calibration of the laser power arriving at the optical cavity, the optomechanical coupling rate, g, can be derived in two ways: via the broadening of the transparency window in electromagnetically induced transparency (EIT) reflection spectroscopy, and by broadening the mechanical mode peak in the power spectral density (PSD) of the optical signal amplitude measured on a high speed detector connected to a real-time spectrum analyzer (RSA). Calibration of the optical and electronic gains of the components to the optical cavity also allows the phonon occupation, ¯n, of the mechanical mode to be extracted from the RSA trace mechanical mode thermometry.

Table 4.1: Summary of surface treatments. Impact of various surface treatments on quality factor at room temperature and pressure, and for cryogenic conditions
Table 4.1: Summary of surface treatments. Impact of various surface treatments on quality factor at room temperature and pressure, and for cryogenic conditions

Experimental Setup

A small percentage (10%) of the laser intensity is sent to a wavemeter (λ-meter) for passive frequency stabilization of the laser (frequency/detonation stabilization is described in Appendix D.4). The alternate position of SW2 is used to calibrate the optical gain of the EDFA, and the nanosecond photodetector (D3) is used to measure the cavity DC transmission response.

Figure 5.1: Detailed experimental setup. Full backaction cooling setup including switched optical paths (via optical switches, SWn)
Figure 5.1: Detailed experimental setup. Full backaction cooling setup including switched optical paths (via optical switches, SWn)

EIT Measurements

If in the narrow regime we assume that ∆ = ωm (that is, we are detuned by a mechanical frequency, on the red side of the cavity), then in the sideband resolved regime this is the case. This quantitatively describes the EIT transparency window induced by the interaction of the optical field with the mechanics, and is spectrally an inverse Lorentzian width γ = γi + γOM with vanishing resonant reflection in the large cooperativity limit.

Mechanical Mode Thermometry

  • Calibration of Input Power
  • Calibration of EDFA Gain
  • Calibration of Electronic Gain
  • Optical Characterization
  • Mechanical Characterization
  • Optomechanical Coupling Rate Characterization

Then we lock the pump on the red side of the cavity (at ∆ = +ωm) and measure the entire width of the line, γ(red)=γi+γOM. Plot of measured (#) mechanical bath temperature (Tb) versus cryostat sample installation temperature (Tc).

Results

  • Bath Temperature Characterization
  • Device Characterization
  • Backaction Cooling
  • Error Analysis

Due to the low effective temperature of the laser drive, the mechanical state is not only dampened, but also cooled significantly. To evaluate the efficiency of the optical transduction of the mechanical motion, we also plot in Figure 5.5f the measured background noise PSD or level of imprecision.

Figure 5.3: Device characterization. a, The normalized optical transmission spectrum measured on D3 from which κ, κ e , and ω o are extracted
Figure 5.3: Device characterization. a, The normalized optical transmission spectrum measured on D3 from which κ, κ e , and ω o are extracted

Modifications to Intrinsic Mechanical Damping

Temperature Dependence

Using the calibration procedure discussed in section 5.3.1 for the pin, the error lies in determining the L0 and L1 losses. As such, we can estimate the cavity temperature by looking at the shift in the cavity frequency, starting from a known temperature.

Figure 5.6: Thermo-optic effects. a, The measured wavelength shift compared to the theoretical shift predicted by (5.26) for a range of cavity temperatures, using 17.6 K as the reference point
Figure 5.6: Thermo-optic effects. a, The measured wavelength shift compared to the theoretical shift predicted by (5.26) for a range of cavity temperatures, using 17.6 K as the reference point

Intracavity Photon Number Dependence

This analysis can be applied to the wavelength shift data for various input powers at low temperature (Figure 5.6b, red circles) to determine the heating due to the photon population inside the cavity. These measurements are performed at a low number of photons inside the cavity, which makes the effects of free carriers negligible (see Section 5.5.2).

Figure 5.8: Photon number–dependent loss. a, Excess loss as a function of n c , inferred from far-red-detuned (∆ > 5.5 GHz) measurements of γ(n c ) − γ (0) (n c ) = γ i,T (T (n c )) + γ i,FC (n c )
Figure 5.8: Photon number–dependent loss. a, Excess loss as a function of n c , inferred from far-red-detuned (∆ > 5.5 GHz) measurements of γ(n c ) − γ (0) (n c ) = γ i,T (T (n c )) + γ i,FC (n c )

Combined Loss Model

The deviation of the data from this prediction indicates an additional loss channel associated with the presence of free carriers. The addition of a free carrier-related loss channel is confirmed by pumping the silicon sample above the band gap with a 532 nm solid-state green laser, which directly stimulates the production of free carriers.

Noise Considerations

Phase Noise

An exaggerated plot of the impact of phase noise on measured power spectral density. The individual contributions to the phase noise-modified normalized spectral density are shown in Figure 5.10.

Figure 5.10: Phase noise–modified output spectra. An exaggerated plot of the impact of phase noise on the measured power spectral density
Figure 5.10: Phase noise–modified output spectra. An exaggerated plot of the impact of phase noise on the measured power spectral density

Amplifier Noise

This is plotted with (purple dotted curve) and without (black dotted curve) the optical insertion loss between the cavity exit and photodetection. The deviation of the measured SNR curve shape from the other cases is mainly attributed to the variance in the excess noise added by the EDFA amplification.

Figure 5.13: Effect of amplifier noise and optical losses on the measured signal. a, Compar- Compar-ison of the measured background NPSD to the shot-noise level of the cooling laser beam amplified by an ideal, noise-free amplifier
Figure 5.13: Effect of amplifier noise and optical losses on the measured signal. a, Compar- Compar-ison of the measured background NPSD to the shot-noise level of the cooling laser beam amplified by an ideal, noise-free amplifier

Measurement Imprecision

FEM simulations of the mechanical breathing mode of the nanobeam cavity yield a moving mass meff = 311 fg and a corresponding zero-point oscillation amplitude xzpf = 2.7 fm.

Future Directions

Further Device Improvements (5GHF Design)

Device Characterization

Backaction Cooling

FEM simulations corresponding to the normalized a, Ey field of the fundamental optical mode, b, displacement field, |Q|, of the fundamental breathing mode, c, surface integrand in (3.39), showing the individual contributions to gmb, and d, volume integrand in (3.47), showing the individual contributions togpe. The black trace corresponds to the measured noise floor where the driving laser is detuned far from the cavity resonance.

Figure 6.1: FEM simulations of the 5GHF design. FEM simulations corresponding to the normalized a, E y field of the fundamental optical mode, b, displacement field, |Q|, of the  fun-damental breathing mode, c, surface integrand in (3.39), showing the indiv
Figure 6.1: FEM simulations of the 5GHF design. FEM simulations corresponding to the normalized a, E y field of the fundamental optical mode, b, displacement field, |Q|, of the fun-damental breathing mode, c, surface integrand in (3.39), showing the indiv

Free Space Couplers

Numerical Simulations

A direct finite element far-field simulation of an optical cavity mode is quite computationally expensive (requiring a simulation volume comparable to the far-field distance, typically several microns). Each cavity mode can thus be characterized by a best-fit set of beam parameters and a normalized far-field mode overlap.

Figure 6.4: Numerical simulations of a free-space coupler. a, a 2D FEM simulation of a candidate coupler mode without a coupling waveguide (normalized E y plotted), showing an exterior crystal region (small circles) with a complete photonic bandgap at 1,55
Figure 6.4: Numerical simulations of a free-space coupler. a, a 2D FEM simulation of a candidate coupler mode without a coupling waveguide (normalized E y plotted), showing an exterior crystal region (small circles) with a complete photonic bandgap at 1,55

Fabrication and Preliminary Results

The W1 waveguide acts as a generic gate for free-space couplers, allowing them to be easily combined with different photonic crystal cavity geometries, such as asb, face-to-face coupling to a 5G device, so that we have the desired single-sided coupling scheme, orc, side-coupled to a nanobeam that allows maintaining a phononic shield around the device. The broad peak indicated by the dashed red line is the lossy free-space coupler cavity mode (with a 3 dB bandwidth of ~8 nm or ~100 GHz and a maximum input-output coupling efficiency of 20%).

Motional Sideband Asymmetry

Observing Zero-Point Motion

For ∆ =ωm (of the probe) the resulting spectrum is given by (2.63) with a change in the cooling beam damped only phonon occupancy, ¯n, due to opposition of the probe beam (expressed as the cooperativity of the probe, CP) ,. Integrating (6.6) and (6.7) near ωm (with the appropriate proportionality constants and after subtracting the shot noise background) yields the respective spectral power near ωm, Pωm,+ (anti-Stokes sideband power; proportional to 1+ Cn¯ .p ) and Pωm,− (Stokes sideband power; proportional to 1−Cn+1¯ .p).

Figure 6.7: Measuring zero-point motion. From [140]. a, The mechanical mode occupancy,
Figure 6.7: Measuring zero-point motion. From [140]. a, The mechanical mode occupancy,

Fourier Transform

Delta Functions

Spectral Density

Commutation Relations

Differential Equations

Trigonometric Identities

Lorentzian Function

Contracted Index Notation

Careful consideration of what to consider the "system", which contains the degrees of freedom of interest, and what to consider the environment (everything else) is essential to providing an accurate description of dynamics. One solution is to approach the environment as a "heat bath" and consider its action on the system as a random perturbing force, an idea originally used to describe the classical Brownian motion of a particle in a viscous to describe liquid [144].

Quantum Langevin Equation

We first assume that in the absence of ˆHint the time evolution of ˆ is simply ˆd(t) = ˆde−iωot, where ωo1 is the resonant frequency of the system. The former oscillate rapidly compared to the latter, have a vanishing cycle average on the 1/ω time scale and can be neglected: the rotating wave approximation.

Input–Output Operator Correlations

Single Mode Cavity Coupled to a Thermal Bath

If the crystal unit cell coordinate system is not aligned with the cavity coordinate system, we can apply a rotational transformation to the photoelastic tensor to align the two. From a practical point of view, the silicon wafers used in the fabrication process are (100) wafers, so we are only concerned with rotational transformations of the in-plane shape.

Equipment Listing

JDSU Switches

Electro-optic Amplitude Modulator

Laser Frequency Stabilization

Lock-in Method

We can fit the signal measured at lock-in using this model, which makes it possible to determine|∆|(the sign can be determined by optical characterization ofωo. and knowledge of the laser wavelength). In practice, the uncertainty in the tuning is dominated by fluctuations in the optical cavity and the resolution of the lock-in measurement.

Network Analyzer Method

The amplitude (√ .X2+Y2) of the reflected, modulated (at ωLI) probe signal as a function of probe detuning, ∆p, measured by a lock-in amplifier (LI in Figure 5.1). For higher driving powers at room temperature, there is additional noise in the signal related to the thermal relaxation time of the nanobeams (on the order of kilohertz to megahertz).

Figure D.4: Simplified experimental setup with VNA. The lock-in amplifier measuring a low- low-frequency signal on reflection is replaced by a vector network analyzer (VNA) to measure the cavity response as a function of probe detuning, ∆ p , on transmissi
Figure D.4: Simplified experimental setup with VNA. The lock-in amplifier measuring a low- low-frequency signal on reflection is replaced by a vector network analyzer (VNA) to measure the cavity response as a function of probe detuning, ∆ p , on transmissi

Continuous Flow Liquid Helium Cryostat

From this view you can see the copper thermal braiding that connects the sample holder to the cold finger via copper blocks. In the image, the sample is attached to the copper stage with copper tape, but we have since added a copper sample clip for better thermalization.

Dimpled Fiber Taper

Instrument Control

We note in this image that the area of ​​the taper that touches the silicon is on the left side of the device (discolored area in the dimple) and that the taper is at a slight angle compared to the nanobeams. The way we have touched in the figure allows a part of the taper to be firmly planted on the side of the nanobeam (in the phonic shield region), while maintaining a sufficient distance from the optical cavity (the taper starts bend upwards as we pass the discolored part moves to the right) so as not to adversely disturb the optical field.

Figure D.8: Taper coupling in the cryostat. We see here a dimpled fiber taper (with laser propagation direction indicated with a black arrow) couple evanescently to a 5G device (indicated with a white arrow)
Figure D.8: Taper coupling in the cryostat. We see here a dimpled fiber taper (with laser propagation direction indicated with a black arrow) couple evanescently to a 5G device (indicated with a white arrow)

Functions

Geometry Indices

4% base: ('center', 'corner') (default 'center') which specifies where the anchor point is relative to the bounding box. 5% Returns the indices, the geometric elements of dimension dim inside a bounding box of size (dx, dy,dz), anchored at pos.

Perturbation Theory

3% Calculates the optomechanical coupling degree between the RF module/electromagnetic waves solution object and the structural mechanics module/solid, stress-strain solution object. 5% Returns the calculated optomechanical coupling rate g and an S object containing a breakdown of the individual contributions in first-order perturbation theory for moving boundaries and the photoelastic effect.

Miscellaneous

Zendri, "Feedback cooling of the normal modes of a massive electromechanical system at submillikelvin temperature," Phys. Collett, “Input and output in damped quantum systems: Quantum stochastic differential equations and the master equation,” Phys.

Gambar

Figure 1.1: Truncated level diagram for an optomechanical system. a, Optical frequency response of the cavity, with the red-detuned pump beam at ω ` = ω o − ω m schematically shown as a green arrow, with mechanics induced scattering sidebands at ω ` ± ω m
Figure 1.2: “Zipper” double nanobeam cavities. a, False-color scanning electron microscope (SEM) image of a fabricated zipper cavity with the transverse (to the long axis of the beam) electric field of the fundamental bonded optical mode superimposed (comp
Figure 1.3: Optomechanical nanobeam cavities. a, SEM image of a fabricated optomechanical crystal cavity
Figure 3.4: Nanobeam unit cell band diagrams. a, The nominal, and b, the defect unit cells of the nanobeam specified by the set of geometric (a, t, w, h x , h y )
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