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Optimization of parameters for generating

by Agus Subagio

Submission date: 14-Nov-2019 09:37PM (UTC+0700) Submission ID: 1213688348

File name: Optimization_of_parameters_for_generating.pdf (967.3K) Word count: 4437

Character count: 22787

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Optimization of parameters for generating

ORIGINALITY REPORT

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diffraction intensity oscillations", Applied Physics

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Letters, 1999

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Y. Yamagata. "Optical emission study of ablation plasma plume in the preparation of

diamond-like carbon films by KrF excimer laser", Journal of Applied Physics, 1999

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repository.ntu.edu.sg

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Submitted to Dongeui University Graduate School

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link.springer.com

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www.as.wvu.edu

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Brian M. McSkimming, F. Wu, Thomas Huault, Catherine Chaix, James S. Speck. "Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h", Journal of Crystal Growth, 2014

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molecular beam epitaxy", Journal of

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Semiconductors, 2012.

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helicon plasmas", Plasma Sources Science and Technology, 05/01/2005

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InGaN nanopyramid arrays on Si for potential photovoltaic applications", Journal of Crystal Growth, 2015

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A V Blant. Plasma Sources Science and Technology, 02/2000

Publication

Foxon, C.T.. "The growth and properties of group III nitrides", Journal of Crystal Growth, 19950501

Publication

elib.suub.uni-bremen.de

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iopscience.iop.org

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www.chemweb.com

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P. Hille, F. Walther, P. Klement, J. Müßener et al. "Influence of the atom source operating parameters on the structural and optical

properties of In xGa 1 − xN nanowires grown by plasma-assisted molecular beam epitaxy",

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Submitted to Ajou University Graduate School

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J. R. Shi. "Photoelectron emission and Raman scattering studies of nitrogenated tetrahedral amorphous carbon films", Journal of Applied

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Physics, 2002

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Jie Zheng. "Iron nitride thin films deposited by chloride assisted plasma enhanced chemical vapour deposition: facile stoichiometry control and mechanism study", Journal of Physics D Applied Physics, 09/21/2009

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www-opto.e-technik.uni-ulm.de

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L.W. Wu. "Nitride-based green light-emitting diodes with high temperature GaN barrier

layers", IEEE Transactions on Electron Devices, 8/2003

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Submitted to National University of Singapore

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"Nitride Semiconductors", Wiley, 2003

Publication

Naoto Kumagai, Hirotomo Itagaki, Jaeho Kim, Hisato Ogiso, Xue-lun Wang, Shingo Hirose, Hajime Sakakita. "Effects of N2 and NH3

plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure", Surfaces and Interfaces, 2019

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Publication

Submitted to Middle East Technical University

Student Paper

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Optimization of parameters for generating

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