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Nguyễn Gia Hào

Academic year: 2023

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Supporting Materials for

Frequency-specific Alterations of Local Synchronization in Idiopathic Generalized Epilepsy

Short Title: Frequency-specific ReHo in IGE

Jue WANG1,2†, Zhiqiang ZHANG3†, Gong-Jun JI1,2, Qiang XU3, Yubin HUANG3, Zhengge WANG4, Qing JIAO5, Fang Yang3, Yu-Feng ZANG1,2, Wei LIAO1,2,3*, Guangming LU3*

1. Center for Cognition and Brain Disorders and the Affiliated Hospital, Hangzhou Normal University, Hangzhou 310015, China.

2. Zhejiang Key Laboratory for Research in Assessment of Cognitive Impairments, Hangzhou 310015, China.

3. Department of Medical Imaging, Jinling Hospital, Nanjing University School of Medicine, Nanjing 210002, China.

4. Department of Medical Imaging, Nanjing Drum Tower Hospital, the Affiliated Hospital of Nanjing University Medical School, Nanjing 210008, China.

5. Department of Radiology, Taishan Medical University, Tai’an 271016, China.

6. Department of Neurology, Jinling Hospital, Nanjing University School of Medicine, Nanjing 210002, China.

†These authors contributed equally to this work.

*Corresponding author: Wei Liao, Center for Cognition and Brain Disorders and the Affiliated Hospital, Hangzhou Normal University, Hangzhou 310015, China. Fax: 86- 571-28867717. E-mail: [email protected] (W. Liao); Guangming Lu, the Department of Medical Imaging, NanjingJinling Hospital, 305#, Eastern Zhongshan Rd., Nanjing 210002, China. Fax: 86-25-84804659. E-mail:

[email protected] (G. Lu).

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S-Figure 1

S-Figure 1. The ‘frequency by group’ interaction effects were largely reproduced when using a scrubbing approach to censor “bad” volumes.

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S-Figure 2

S-Figure 2. Voxel-wise two-sample t-test of ReHo between GTCS and JME groups revealed brain regions with between-group differences in local synchronization at each frequency band (inflated surface maps) (FDR-corrected height threshold p <

0.05, and extent threshold k > 20 voxels). The warm and cold color indicates the brain regions with significantly increased and decreased local synchronization, respectively.

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Dongc aLaboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China bChina International Center for Materials Physics, Chinese Academy of Sciences, Shenyang,

Liu1,3 1Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China 2School of Physics, Southeast