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The error bars represent the statistical uncertainty of the measurement technique, based on the resolution of the instruments used and the number. Hardness error bars show the statistical uncertainty of the measurement technique. standard deviation of measurements.

INTRODUCTION 1

Current internal combustion engine materials

The densities of CGI and cast iron are both in the 7 g/cm3 range, unlike aluminum which has a density of ~2.7 g/cm3 but much lower modulus of elasticity and high temperature fatigue resistance and higher coefficient of thermal expansion .8. Carbon fiber reinforced polymeric composites have densities of ~1.5-2.0 g/cm3, 12 being the densities of SiC/SiC composites.

Current structural biomaterials

2.0-2.5 g/cm3.14 Especially in the case of SiC fiber-reinforced materials, however, the processing of the fibers into mats which can then be infiltrated with a matrix precursor can be quite difficult. Furthermore, in some places in the body, the implant may become visible over time, such as with dental implant posts.

B ACKGROUND ON S ILICON N ITRIDE

  • Crystallography of Si 3 N 4
  • Sintering, additives, and phase compatibility
  • Minor SiAlON polytypoids
  • The role of Al and O in SiAlONs
  • Effect of additives on SiAlON structural properties

Another important consequence of the addition of additives is the well-documented solid solution of Al and O in the Si3N4 lattice, where Al substitutes for Si and. As the concentration of Al and O increases, the covalency of the system decreases, so the solid solution primarily contributes to thickening.

Figure 1. Typical Si 3 N 4  microstructure, wherein long rod-like grains are embedded in  a fine-grained matrix
Figure 1. Typical Si 3 N 4 microstructure, wherein long rod-like grains are embedded in a fine-grained matrix

M OLECULAR PRECURSORS TO CERAMICS

For the moment, we will consider precursors to more ubiquitous ceramics, such as SiO2 and Al2O3. These hydrolysis-polycondensation reactions must be carefully monitored to control the particle size of the precipitates, but this route is widely recognized as a method for the synthesis of highly pure oxide powders, coatings or fibers.

Figure 8. Molecular structure of tetraethyl orthosilicate (TEOS).
Figure 8. Molecular structure of tetraethyl orthosilicate (TEOS).

S ILICON CARBONITRIDE / SILICOBORON CARBONITRIDE / TURBOSTRATIC BN BACKGROUND

Structures of SiCN and SiBCN

It was reported by Widgeon and co-workers that the use of more linear polymeric precursors for SiCN yields ceramics in which Si at the domain interfaces is bonded almost exclusively with N and carbon is predominantly found in its graphitic layered form. In contrast, the use of more branched precursors gives SiCN, which exhibits "mixed" SiN4-xCx (0 ≤ x ≤ 4) tetrahedra at the domain interfaces.99 A paper revealing a similar trend was published a year later, in which the group found that in SiBCN ceramics derived from a linear polysilylcarbodiimide (PSCD), Si was primarily coordinated to N, which was then bonded to either B or C as the interfacial motif.

Thermal decomposition of Si(B)CN

The role of BN in SiBCN and other systems

The striking differences in the crystallization behavior and thermal decomposition of SiCN and SiBCN lead researchers to consider the t-BN as a diffusion barrier in the SiBCN structure. The suppression of the procedure of reaction 5 implies that the t-BN phase confines C to its graphite-like structure, rather than allowing access to the SiN4 tetrahedral domains. Amorphous BN coatings have been deposited on Si/SiGe wafers to enable the deposition of transition metal dichalcogenides.108 Hexagonal BN is being investigated as a diffusion barrier for copper in semiconductor compounds.109 In fact, uniaxial hot pressing is often performed using graphite dies. which are coated with h-BN powder to prevent reaction between the graphite and the sample. Clearly, the different forms of hexagonal boron nitride (including t-BN) offer unique capabilities in the control of various properties of ceramics.

S ILICON N ITRIDE /B ORON N ITRIDE P OLYCRYSTALLINE N ANOCOMPOSITES

It is clear that the BN layers are of crucial importance for the thermal stability of SiBCN. However, it differs from h-BN in that it exhibits rotational asymmetry in the c-direction, which makes it not completely crystalline.103-104 t-BN can, however, be crystallized into h-BN.103.

T HE F RACTOGRAPHIC P ROCEDURE

Quantitative fractography and K IC

For these reasons, there was great interest in the development of a fracture toughness experiment using the lateral cracks induced by a Vickers imprint.126 The measurement of the corner crack lengths, the microstructure of the sample and the equation used to calculate the KIC, which have been proposed several of, can all affect the final result. Procedures for generating Vickers impressions and measuring resulting fractures were carefully performed by a single investigator using the same indenter tip each time.

MOLECULAR-LEVEL SINTERING ADDITIVES FOR SYNTHESIS OF OF SIALON CERAMICS 27

This work demonstrates the successful implementation of an organometallic precursor for the incorporation of Al and O into the Si3N4 lattice and subsequent synthesis of SiAlON ceramics.132 X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), surface area measurements, energy dispersive spectroscopy (EDS) and high-temperature scanning electron microscopy (HTSEM) are used to elucidate the nature of the degradation of the organometallic precursor. The solid solution of Al and O in the Si3N4 lattice is assessed by Rietveld refinements.

M ATERIALS AND M ETHODS

In the extreme case, individual solute atoms distributed on the surfaces of the silicon nitride particles would yield the least stable case with the shortest possible diffusion lengths. Powder mixtures are identified by the yttrium oxide content added on top of the base composition (Si3N4, AlN and Al2O3 or ASB) and also whether they contain aluminum oxide powder or ASB. For example, 2YASB indicates that the mixture contains Y2O3 at a concentration of 2% by weight in addition to the base composition and ASB in place of Al2O3.

The calculation of a SiAlON powder mixture must take into account oxygen incorporated (and nitrogen lost) through the oxidation of α-Si3N4 and AlN powders. Specific surface area was measured by the 11-point BET nitrogen adsorption method in a Micomeritics Gemini VII Surface Analyzer (Micromeritics, USA). Density was measured via the immersion method in deionized water at room temperature under the guidance of ASTM C-830.135 “Zero-strain” elastic modulus was measured by the pulse echo technique.136 Thermogravimetric analysis (TGA) was performed using a TA Instruments Q- 600 STA Thermal Analyzer in alumina crucibles under flowing UHP N2 at a flow rate of 30 mL/min.

Phase identification was performed with the Diffrac.Eva program, and Rietveld refinements were performed with the Topas program (V6, Bruker, USA).

Table I. SiAlON Starting Material Specifications (- indicates not reported or  applicable)
Table I. SiAlON Starting Material Specifications (- indicates not reported or applicable)

R ESULTS AND D ISCUSSION

The cloudy and particle-free appearance of the sample containing ASB (Figure 15a) can be compared to the non-ASB treated sample (Figure 15b). Thermogravimetric analysis (TGA) was performed up to 1000 °C to explore the thermal decomposition of the organic precursor during the sintering cycle. The mass loss of the SiAlON 0YASB blend containing ASB was ∼7%, somewhat less than the 8.6% expected from the removal of alkyl groups alone.

The mass loss of the mixture containing alumina was <1 wt. % when heated to 1000 °C, while the mixture containing ASB lost 6.7 wt. % mass. The density of ASB-SiAlON was found to be comparable to that of Al2O3. A solid solution of Al and O causes an overall increase in the ionicity of the system and is described as.

This is illustrated in Figure 28, in which the error bars represent the statistical measurement uncertainty of the technique.

Figure 15. SEM micrographs of a) Al organometallic-containing SiAlON powder blend  (0YASB and b) conventional Al 2 O 3 -containing SiAlON powder blend  (0YAl 2 O 3 ,) with corresponding measured BET specific surface areas
Figure 15. SEM micrographs of a) Al organometallic-containing SiAlON powder blend (0YASB and b) conventional Al 2 O 3 -containing SiAlON powder blend (0YAl 2 O 3 ,) with corresponding measured BET specific surface areas

C ONCLUSIONS

I NTRODUCTION

FRACTOGRAPHY OF SILICON NITRIDE BASED CERAMICS TO GUIDE PROCESS IMPROVEMENTS 68

  • Mathematical treatment of fracture
  • Fracture markings
  • Fractographic procedure

The consequence that different volumes of the sample are subjected to the maximum stress is rooted in the theory of the weakest link. The smooth area of ​​the fracture surface surrounding the origin is known as the fracture mirror. A brief comment on the consistency of the two techniques for calculating elastic modulus (stress-strain curve and pulse-echo) is made.

A small piece of adhesive tape was placed on the compressive (top) surface of the specimen. Critical flaw sizes were taken as ½ the radii of the flaws parallel to the tensile surface for internal flaws and flaw depths for surface flaws. Fracture mirror sizes were taken as a radii of the mirrors from the fault edges to mirror notch boundaries parallel to the tensile planes.

The elastic modulus values ​​are the average of the slopes of the five curves, ± 1 standard deviation.

Figure 43. Schematic representation of the stresses developed throughout the cross  section of a bar in flexure
Figure 43. Schematic representation of the stresses developed throughout the cross section of a bar in flexure

SUMMARY AND CONCLUSIONS 91

These analyzes cumulatively indicate that t-BN induced by the H3BO3 precursor inhibits the crystallization of second phases in the SiAlON grain boundary and narrows the grain size distribution. Silicon Nitride Market Research Report by Type, by End-Use Industry, by Region - Global Forecast to 2027 - Cumulative Impact of COVID-19. Hirosaki, N.; Akimune, Y.; Mitomo, M., Effect of grain growth of beta-silicon nitride on strength, Weibull modulus and fracture toughness.

Kato, K.; Inoue, Z.; Kijima, K.; Kawada, I.; Tanaka, H.; Yamane, T., Structural approach to the problem of oxygen content in alpha silicon nitride. Forming and densification by pressure fusion; National Aeronautics and Space Administration: Cleveland, OH, 1975. Matsunaga, K.; Iwamoto, Y., Molecular Dynamics Study of Atomic Structure and Diffusion Behavior in Boron-Containing Amorphous Silicon Nitride.

Amato, I.; Martorana, D.; Silengo, B., Some considerations on the kinetics of hot-pressed alpha-silicon nitride powder.

Figure 62. Rietveld refinement result for 4YAl 2 O 3  sintered for 60 minutes.
Figure 62. Rietveld refinement result for 4YAl 2 O 3 sintered for 60 minutes.

B EAM T HEORY A PPROACH TO S TRESS AND S TRAIN

The lack of shear force in the region of maximum tensile stress (and compressive stress) is one of the advantages of the four-point bending experiment. The distance of the point from the neutral axis, y, is constant, and θ is approximated by the slope of the deflection function v(x), i.e. now consider a small area of ​​the rod in question, with a moment acting on the left side which is counteracted by the moment induced by axial forces, as shown in Figure 81.

The term consisting of the integral of y2 with respect to the surface is defined as the second moment of inertia, or area moment of inertia, of the beam (I). Recalling equation 37, M can be written in terms of I, E, and beam curvature, as in equation 41. The plane of maximum stress in the cross section of the specimen will be farthest from the neutral axis, i.e.

These are that the slope of the beam must be continuous at the point of loading and the deflection must be zero at each point of support.

Figure 75. Free body diagram for the leftmost region of the four point ¼-pt flexure  specimen
Figure 75. Free body diagram for the leftmost region of the four point ¼-pt flexure specimen

P ROCEDURE FOR C ONVERSION OF L OAD /D ISPLACEMENT R AW D ATA TO A S TRESS /S TRAIN C URVE

The load versus extension curve was measured, an equation for the linear elastic region was generated using a least squares fit, and the extension was expressed as a function of load for each data point. The x-intercept of the linear elastic region was found and subtracted from each extension value in the curve. Linear least squares fits were performed for the linear elastic regions of each generated experimental load versus displacement curve.

The x-intercepts were determined and subtracted from their respective curves, shifting the plots to the left.

Figure 82. Machine compliance curve for the testing frame/fixture combination used  in this work
Figure 82. Machine compliance curve for the testing frame/fixture combination used in this work

Gambar

Figure 1. Typical Si 3 N 4  microstructure, wherein long rod-like grains are embedded in  a fine-grained matrix
Figure 2. α-Si 3 N 4  crystal structure. White lines indicate the unit cell.
Figure 3. β-Si 3 N 4  crystal structure. White lines indicate the unit cell.
Figure 5. Schematic compositional pyramid for the Si-Al-O-N system. Note that the  common starting materials for the synthesis of SiAlONs - Si 3 N 4 , 4(AlN),  2(Al 2 O 3 ), and 3(SiO 2 ) - can be found along four of the edges of the  pyramid
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