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Study on the growth and application of ZnO nanorods

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Introduction

Growth process of nanostructure

  • Template-based synthesis 7
  • Electrospinning 9
  • Lithography 10

For the formation of nanorods or nanowires, anisotropic growth is required, i.e. the crystal grows along a particular orientation faster than other directions. the same diameter along the longitudinal direction of a given nanowire, can be achieved when crystal growth proceeds in one direction, whereas no growth in other directions. Various templates with nano-sized channels have been explored for the template growth of nanorods and nanotubes.

Fig.  1.2.    Common  experimental  set-up  for  the  template-based  growth  of  nanowires  using  electrochemical  deposition
Fig. 1.2. Common experimental set-up for the template-based growth of nanowires using electrochemical deposition

Material properties of ZnO 12

The light passing through this phase mask was modulated in the near-file so that a series of zeros in the intensity at the edges of the relief structures were formed on the PDMS mask. The large exciton binding energy of ~60 meV paves the way for an intense near-band-edge excitonic emission at room and higher temperatures, because this value is 2.4 times that of the room temperature (RT) thermal energy (kBT=25 meV) ) .

Objective and organization of this research 14

Consequently, the diameter of the nanowire will decrease and the growth will eventually stop, when all the catalyst evaporates. In growth using a catalyst, the synthesis is performed based on the vapor-liquid-solid (VLS) growth mode. The morphologies and structures of the synthesized samples were analyzed by scanning electron microscopy (SEM) and high-resolution X-ray diffraction (HRXRD).

Structural uniformity of the nanorods estimated by SEM and HRXRD. a) The histogram of tilt angles of ZnO nanorods grown at 650. It was focused on evaluating the effects of two important growth parameters such as growth temperature and carrier gas flow. The morphologies and structures of the synthesized samples were analyzed by scanning electron microscopy (SEM).

The morphologies and structures of the synthesized samples were analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). 5.2 (a) is the morphology of the sample grown on AuGe thin film, showing vertically well-aligned ZnO nanorods. Average diameters and lengths of the nanorods were in the range of 155-165 nm and 5-6 µm, respectively.

Fig.  2.1.    Schematic  illustrating  six  steps  in  crystal  growth,  which  can  be  generally  considered  as  a  heterogeneous  reaction,  and  a  typical  crystal  growth  proceeds  following  the  sequences.
Fig. 2.1. Schematic illustrating six steps in crystal growth, which can be generally considered as a heterogeneous reaction, and a typical crystal growth proceeds following the sequences.

Experimental

Catalytic growth 22

Although the evaporation of the catalyst does not change the composition of the saturated liquid composition, the total volume of the liquid droplet is reduced. One of the simplest methods is to choose a single crystal substrate with the desired crystal orientation.

Fig.  2.2  Schematic  showing  the  principal  steps  of  the  vapor-liquid-solid  growth  technique:  (a)  initial  nucleation  and  (b)  continued  growth.
Fig. 2.2 Schematic showing the principal steps of the vapor-liquid-solid growth technique: (a) initial nucleation and (b) continued growth.

Characterization

  • Transmission electron microscopy (TEM) 27
  • Photoluminescence (PL) 29
  • High resolution X-ray diffraction (HRXRD) 34

The head of the scattering vector moves perpendicular to the scattering vector in reciprocal space. The growth conditions were systematically investigated and the feasibility of this new catalyst was investigated in terms of the uniformity and high optical quality of nanorods. The photoluminescence (PL) spectroscopy was used to evaluate the optical property of the samples at room temperature.

These results can be understood in terms of the temperature dependence of the core size, as explained above. The growth conditions of NRs between the two parallel Si substrates were exactly the same as those of the NRs growth itself. The photoluminescence (PL) spectroscopy was used to observe the optical property of the NRs at room temperature.

With the increase of Zn concentration, instead of precipitating zinc, zinc phase buffer layer is formed on the substrate in the form of either metal-Zn-O alloy or zinc oxide. The presence of the alloy tip is an indication of the conventional VLS growth mechanism. Despite the presence of the free exciton PL peak, the excitonic band is absent in the photocurrent spectrum.

Fig.  2.3.    Experimental  setup  used  for  PL  measurements  at  low  excitation.
Fig. 2.3. Experimental setup used for PL measurements at low excitation.

Catalytic growth of ZnO nanorods on AuGe catalyst

Experimental 40

We used dry N2 as a carrier gas, which flows through a quartz tube at a flow rate of 500 (ml/min) during growth.

ZnO nanostructure by growth temperatures 41

The conventional model to explain the growth mechanism of the 1D structure involves the participation of VLS in the growth process. The central idea of ​​VLS growth can be divided into two stages: 1) nucleation and growth of eutectic alloy droplets and 2) growth of nanorods through liquid droplets due to supersaturation. During the growth process, the catalyst absorbs vapor components such as Zn (vapor) and ZnxO (x<1, vapor) to form a eutectic alloy.

Therefore, in this experiment, the growth temperature is limited to 700 oC significantly lower than that for the Au-catalyzed VPT method. 1(a) is on a micrometer scale of 2.5 μm, however it becomes a nanometer scale structure as the growth temperature increases with a diameter of ~150 nm, and finally becomes a needle-like structure with a diameter of ~90 nm at higher temperatures. high.

Fig.  3.1.    SEM  images  of  ZnO  nanostructures.  (a)  ZnO  pillars  and  islands  grown at 600  o C, (b) uniform ZnO nanorods obtained at 650  o C and (c) ZnO  wire with sheets formed at 700  o C.
Fig. 3.1. SEM images of ZnO nanostructures. (a) ZnO pillars and islands grown at 600 o C, (b) uniform ZnO nanorods obtained at 650 o C and (c) ZnO wire with sheets formed at 700 o C.

The optical properties 44

1 (b), the increase in solubility makes the concentration distribution of the solute in the solution, which results in the spatial distribution of the initial nuclei. Once crystallization from a nucleus starts, growth in the c -axis direction will be preferred due to the high surface energy of the c -plane. As the growth temperature is further increased up to 700 oC, green emission appears, although the intensity of the UV emission also increases.

Also, these results show the predominance of a low-temperature growth, because in the case of Au-catalyzed ZnO nanorods grown at higher temperatures (oC) they usually show strong green emission at around 2.45 eV [16,17]. In the report, however, the oxygen atmosphere, the intensity of the green emission increased by annealing and finally dominates the PL spectrum at 850 oC.

Fig. 3.2.  PL spectra of the samples grown at (a) 600  o C, (b) 650  o C and (c)  700  o C, measured at room temperature.
Fig. 3.2. PL spectra of the samples grown at (a) 600 o C, (b) 650 o C and (c) 700 o C, measured at room temperature.

Divergence of nanorods 46

In this chapter, we report the growth of well-aligned ZnO nanorods on ITO glass by a simple vertical vapor-phase transport (V-VPT) method. The growth process of ZnO nanorods was successfully achieved by controlling the systematic growth temperature. Based on these observations, we suggest that the growth of ZnO nanorods can occur by the VS process [20, 21].

4.3 (a), ZnO nanorods were grown at different growth temperatures and the flow rate of the carrier gas N2 was fixed at 600 mL/min. 4.3 (b), ZnO nanorods were grown on a modified carrier gas flow and the growth temperature was fixed at 650 oC. Well-aligned ZnO nanorods were grown on ITO glass by the vertical vapor phase transport (V-VPT) method.

And then, the growth mechanism of ZnO nanorods grown on ITO glass was investigated by controlled growth parameters in Chapter 4.

Fig. 4.1  SEM images of ZnO nanorods grown on ITO glass at (a) 500  o C, (b)  550  o C, (c) 575  o C, (d) 600  o C, (e) 625  o C and (f) 650  o C.
Fig. 4.1 SEM images of ZnO nanorods grown on ITO glass at (a) 500 o C, (b) 550 o C, (c) 575 o C, (d) 600 o C, (e) 625 o C and (f) 650 o C.

Summary 48

Growth of well-aligned ZnO nanorods on ITO glass

  • Experimental 52
  • Growth processes of ZnO nanorods via VS growth method 53
  • Various features of ZnO nanorods by growth parameters 55
  • Optical properties 58
  • Summary 58

ZnO nanorods were grown on ITO glass by vertical vapor phase transport (V-VPT) method without the aid of catalyst. Numerical values ​​of length, spreading angle, diameter and density of ZnO nanorods according to controllable growth parameter such as (a) growth temperature and (b) carrier gas flow. From these results, it can be stated that not only the growth temperature but also the carrier gas flow has a great influence on the formation of ZnO nanorods.

In the case of dispersion angle, as the growth temperature increases, well-aligned ZnO nanorods could be obtained. Based on these observations, we propose that for the metal thin film catalysts, the growth of ZnO nanorods can occur via a VS process [13,14].

Introduction 62

Electrical and optical properties of nanostructures are typically measured by making metallic contacts to NRs placed on an insulating substrate. Although this approach is suitable for the investigation of physical properties of NRs, it is a time- and cost-consuming process. This method can be used for various applications, and can also provide the simplest way to fabricate nano-device and measure the electrical properties of nanostructures.

Although sometimes the catalyst hinders the operation of the device [11], it is useful for the synthesis of various nanostructures in terms of controlling the size, position and density of the nanostructures. We tried to take advantage of the catalyst and the one-step synthesis of a nanorod between two adjacent Si substrates, simultaneously.

Experimental 63

Recently, a similar idea was successfully realized using etched Si substrates without any catalyst assistance [10]. Various metals were pre-deposited on Si substrates and the growth of NRs on it was optimized. NR growth was initiated by inserting a quartz tray into the quartz tube furnace at 650 oC.

The sandwiched Si substrates were prepared as follows; (1) Pre-deposition of metals on each Si substrate. 2) Glue the Si substrates together with ceramic paste, in this process the metal deposited surface should be coated but insulated from each other. For the photoresponse measurement, Xe lamp with an output power of 500 W was used as a white light source, and the spectrum was not normalized.

Fig. 5.1.  Schematic of ZnO nanorod growing across the metal deposition Si  substrate.
Fig. 5.1. Schematic of ZnO nanorod growing across the metal deposition Si substrate.

ZnO nanorods on various metal catalysts 65

Field emission scanning electron microscopy (FE-SEM) images of the growth of ZnO nanorods on SiO2/Si substrate using different metal catalysts. The synthesized ZnO nanorods had a diameter of 60–70 nm and a length of 2–3 µm. In general, the melting temperature, surface energy and crystal structure of metal catalysts influence the formation of nanostructures.

Fig. 5.2.  Field-emission scanning electron microscopy (FE-SEM) images of  ZnO  nanorod  growth  on  SiO 2 /Si  substrate  using  various  metal  catalysts
Fig. 5.2. Field-emission scanning electron microscopy (FE-SEM) images of ZnO nanorod growth on SiO 2 /Si substrate using various metal catalysts

Well-aligned ZnO nanorods 67

We propose that the process proceeds as follows: First, Zn vapor is generated by thermal evaporation of Zn powder and transported to the substrate surface, where the incoming Zn vapor is preferentially adsorbed onto the large metal islands formed at 650 oC. As the Zn vapor continues to deposit at these nucleation sites, it is immediately oxidized and nanorods are formed via a VS process. Finally, it is worth pointing out that noble metal catalysts can result in the difference in the growth mode of nanorods for noble metal catalysts.

Fig.  5.3.    Tilted-view  SEM  images  show  a  mean  divergence  of  ZnO  nanorods. The insets show typical cross-sectional images
Fig. 5.3. Tilted-view SEM images show a mean divergence of ZnO nanorods. The insets show typical cross-sectional images

The growth mechanism of ZnO nanorods 69

Finally, it should be emphasized that noble metal catalysts can make a difference in the way nanorods grow for noble metal catalysts. a) Typical (I–V) characteristic curve of Sn-ZnO-AuGe diode and (b) Al-ZnO-AuGe diode.

Fig. 5.5.  (a) Typical ( I–V ) characteristic curve of Sn-ZnO-AuGe diode and  (b)  Al-ZnO-AuGe  dide
Fig. 5.5. (a) Typical ( I–V ) characteristic curve of Sn-ZnO-AuGe diode and (b) Al-ZnO-AuGe dide

Electrical properties of ZnO nanorod device 71

그 중심에는 항상 저의 지도교수이신 장지호 교수님이 계셨습니다. 교수님, 말로 다 표현할 수는 없지만 제 논문의 한 페이지를 빌려 감사의 마음을 전하고 싶습니다. 항상 교수님의 가르침을 기억하고 부끄럽지 않은 학생이 되도록 노력하겠습니다.

박사님께도 진심으로 감사드립니다. 조언해주신 고항주님, 오동철 교수님, 이홍찬 교수님. 그동안 여러분의 도움과 지원에 진심으로 감사드립니다.

Fig.  A.1.1.  Inelastic  mean  free  paths  for  electron  kinetic  energies  up  to  10  keV, for Au, GaAs, SiO 2  and NaCl.
Fig. A.1.1. Inelastic mean free paths for electron kinetic energies up to 10 keV, for Au, GaAs, SiO 2 and NaCl.

Summary 71

Hard x-ray photoemission spectroscopy (HX-PES) 77

Gambar

Fig.  1.1.    Examples  of  zero-dimensional  nanostructures  or  nanomaterials  with  their  typical  ranges  of  dimension.
Fig.  1.2.    Common  experimental  set-up  for  the  template-based  growth  of  nanowires  using  electrochemical  deposition
Fig.  1.2  illustrates  the  common  set-up  for  the  template-based  growth  of  nanowires  using  electrochemical  deposition.
Fig.  1.3.    Schematic  illustrating  procedeures  used  for  the  preparation  of  single  crystal  silicon  nanowires.
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