GEOPOLYMERIZATION TECHNOLOGY.pdf

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O:~mAP Universiti Malaysia Perlis

INVENTORS

MOHO MUSTAFA AL 8AXRI ABDULLAH SIWIIFAH ZAUHA SYED ZUBER KAMARUDIN HUSSIN MOHAMMED BIN HUSSAIN MUHAMMAD FAHEEII MOHO TAHIR FAUZIAH AHMAD

NORAZIAH MOHAMED NOOR NOOR FIFINATASHA SHAilEDAN

CONTACT DETAILS

CeRtrt ,I Expo,",," s.optlymtr & Gr ....

TlCbnelogy (CEGaoGTach) School of Mil_rials Er\tinatring UnlwraJtJ Mal..,.la P.rll, (UnIMAP) P.O 80177, D/A Pej_bat POI Belir mooo lanpr. PerUl, Mallpla

GEOPOLYMERIZATION TECHNOLOGY FOR

SOIL STABILIZATION APPLICATION

.mail: 1D111 .. 1_llbakrihtimap.nu.my

Patent No.: P1201370122S

PROBLEM STATEMENT

• Soft soils have been associated to many problems especially in engineering field; landslide, during the construction of road, building foundation, railway and offshore structure, river erosion and etc.

• Can occur during the construction or all the way through service life

• Have unsufficient strength of the soils to support the load due to the presence of water, which significantly affects the engineering behavior.

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_ PROCESS DESCRIPTION

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SoftSolls+

Alk~line Activator

NOrTmll Curin!:

(Allowed 101 geoJ)olvmerilation

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In-situ Soil Stabilization Process

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gra<l~, Soli is I""",,,~d tD" dem h re-Qy,,<><ll

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~_:) PRODUCT DESCRIPTION

SolidI Liquid Ratio 1.0 - 3.0 ~

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Normal Curing 7 days

Liquid Limit Reduced down to 31 %

Plastic Limit Increased up to 35%

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Plasticity Index Down to 100%

Unconfined Compressive Strength Up to 25 MPa

,F') NOVELTIES

• Treatment for soil stabilization

• Easy and fast treatment process

COMMERCIAL POTENTIAL

• Soft soils treatment (depends on the soil characterization)

• Applicable for slope treatment

• Alternative way for soil stabilization

II COLLABORATION

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up~m AP UNIVERSITI SAlNS MALAYSIA

PUBLICATIONS

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KACST 0j.uiiJ1 q ftlq.lsz..LJ

• S.l. Sharifah laliha. H. Kamarudin. A.M. Mustafa AI Bakri. M. Binhussain, M.S. Siti Salwa (2013). Review on Soil Stabilization Techniques. Australian Journal of Basic and Applied Sciences. 7(5): 258-265. 2013.

• A.M. Mustafa AI Bakri, A. R. Rafiza. Y. larina. H. Kamarudin, Y. M. Uew. A. M. Izzat (2013). Asas Geopolimer Teori & Amali. Unit Penerbitan Universiti Malaysia Perlis.

• A. M. Mustafa AI Bakri, C. Y. Heah. Y. M. Uew (2012). Clay Based Geopolymer Processing & Characterization. Lambert Academic Publishing.

u~: mAP Universiti Malaysia Perlis

INVENTORS

DR. MOHO KHAIIIIIHIIII MD ARSHAD PROF. DR. UDA HASHIM NORAINI OTHMAN

CONTACT DETAILS

ASYMMETRICAL DOUBLE GATE:

INSTITUTE OF NAND ELECTRONIC ENGINEERING (INEEI UNIVERSITI MALAY8IA PERLIS .'000 UNGAR, PERLIS Te!epb0ll8: 04117D7138

.mail: mohd.ldllil1llllllmeu.imlp.adu.my

SIGNIFICANT IMPROVEMENT IN ULTRA-SCALED SOl MOSFET

I NTROD UCTION

Fully-depletion operation is mandatory requirement for ultra-scaled devices (Le. < 45 nm technology) which only can be achieve d either multi-gate (Le. FinFET) or thin body Silicon-on-Insulator (SOl). Thin body SOl offers another interesting feature compared to any other technologies i.e. back-gate biasing. In this invention, we utilize asymmetrical contact from the top which provide improved performance and better controlled of short-channel effects in thin body and thin buried oxide of SOl MOSFETs.

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_ NOVELTY

Existing Technologies

Emulation Double Gate Transistor

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New Invention

Planar Architecture - Silicon 3D Architecture - Silicon/ Planar Architecture - sal

Platform sal Platform Platform

• Simple architecture with significant Improvement on drive current (Id-Vg and Id-Vd) without forgo the off current.

• Extension to ultra-scaled devices: support Moore's Law for - 10 nm technology

• Eliminate Short Channel Effects Collaboration

• Universite catholique de Louvain. Louvain-Ia-neuve, Belgium

• CEA - Leti, Grenoble. France

el ai, Solid-Stale ElectroniCS, 2014 (accepled for publicalion) el ai, Solid-Stale ElectroniCS. 90. 2013: 56-64

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^~t:=:~I:^EE^~^{E 1i}^~^r~a;;n~s.Eleclron Devices, 59. 2012: 247-251 ElectroniCS. 90. 2012: 50-58 . . . 8MIIllitat !losII.·t:illlfo!;lqtl1jl~s. 71, 2012: 93-100

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• RESULTS

I-V Characteristics

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Elimination Short Channel

Effects

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Short Channel Effects

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• . , "'" , ... t'ng," Single iASymmetnc~11 % improvement

Gate Double Gat~

V_Th(V) 55 (mV/dec) DIBL(mVN) Ion (uAlum)

0.45 95 115 500

0.30 80 95 620

30% 15%

18%

24%

• Lower threshold voltage (i.e suitable for low power application -energy saving)

• Lower subthreshold slope (i.e faster switching speed between on and off),

• Lower drain-induced barrier lowering (i.e. better control of short channel effects : translated into - 20 % increased in speed.

PRODUCT IMPLEMENTATION

Low power mobile application i.e. smart phone.