real copo was the su Keyw PAC
mate inorg suita appli films stabl holog contr large large comm quan mole agen band band infor study struc
* ) For
Optica (PVA-g
Ali Qass
1 Departm
2 Departm
Received Abstrac The opti and imagin olymer were used to stu urface ener words: Opt CS: 78.20.C
1. Intro During t erial [1]. Ne
ganic compo able to low ications. An s with custo e photo in graphy, etc rolled devic e bulk nonl e. Rhodami monly used ntum yield.
ecular probe nt [8], as bio d gap and e d structure rmation abo y of the o cture and th
r correspondenc
l constant g-Rh B)
sim Abdulla ment of Phys ment of Chem
d 3 May 20 ct
ical constan nary part o e determine udy the opti
gy loss (SE tical constan
i, 78.40.Me
oduction the last de evertheless,
ounds, rese w cost mo nother advan
omizable pr nduced opti
c…) can b ces. Doped linear susce ine B (Rh d as an acti
It has been e [6], as an ological sta extinction c
and electri out the chem optical abso
e energy ga
ce, E-mail: aliqa
ts of the p
ah1*, Salah S ics, College mistry, Colleg
13; Revised
nts of the pre of the comp ed. The opt ical dispersi ELF) functio nts; Rhodam e.
cades, rese because of earch moved
olecular en ntage of po roperties. It cal behavio be produced d polymeric
eptibilities i B) is a c ive medium n also found electrochem ain [9]. Kno coefficient)
cal propert mical bondi orption spec
ap in the cry
assim_74@yah
poly vinyl
Sh.El-Lauib of Science, U ge of Science
d 19 August
epared PVA mplex refrac
tical condu ion parame ons were als mine B dye;
earch intere f the heavy d towards p ngineering olymers is th
t has been a or (photore d and used c materials
if the mole chromophor m in tunable d in a wide mical lumin owledge of is vital to ties. For ex ing and ele
ctra provid ystalline an
hoo.com
l alcohol g
bi2, Eman M University of e, University
t 2013; Acc
A-g-Rh B th ctive index uctivity was eters. The v so investiga dispersion
ests have b and expens polymeric m
processes he possibilit
also demon efractive eff
d to design offer high ecular hype
re from a e lasers [2-
range of ap nescence sen f optical con determine xample, the
ctronic stru des essentia nd non-cryst
grafted R
M. Jaboori3 f Basrah, Bas
of Basrah, B
epted 18 No
hin films ha and dielec s studied. W volume ener
ted.
parameters
been focuse sive growth materials. In and very ty to achiev nstrated that fects, birefr n new gen optical qua rpolarizabil
family of 4] due to i pplications nsitizer [7], nstants of th
the atomic e refractive ucture of the
al informat talline mate
Rhodamin
srah-Iraq Basrah-Iraq
ovember 20
ave been stu ctric consta Wemple-Di rgy loss (V
s; energy los
ed on elect h technique ndeed, the m
useful for ve reliable d t by suitabl fringence, d neration of uality and p
lity of the xanthene its high flu
in solar cel , as a water the material structure, e index pro
e material, tion about erials [10, 1
e B
013
udied. The ant of the
Dimenico ELF) and
ss.
tro-optical s of these material is r specific doped thin
le doping, dichroism, optically potentially dopant is dyes that orescence ll [5] as a r – tracing ls (optical electronic ovides the
while the the band 11]. In the
66
present w copolyme used to d was analy
2.
2.
P provided purificati The react 2.
M acetone technique DMSO s room tem spectroph
3.
3.
F B thin fi 650nm, r the wave and the t reflectanc
work, we d er polyviny determine th
yzed by usi
. Experime .1 Materia olyvinyl al d by Aldrich
ion. Dimeth tion and cha .2 Prepara Macroscopic
were used e, dropping solvent. Th
mperature hotometer (
. Results a .1 Optical Fig. 1 show films. The s
related to hi elength rang third peak ce of film is
Fig. 1
determined yl alcohol gr
he refractiv ng transmit
ental als
lcohol (PVA h. Rhodami hylslfuoxide aracterizatio ation of Thi c glass sub as substra g a small a e transmitta
the wavel Thermospe
and Discuss Transmiss ws the transm
synthesis fi igh transpar ge 500-600n
at ≤ 500 s 20% at 57
: The transm
the optical rafted Rhod ve index, lo
ttance spectr
A) (Mwt=1 ine B dye ( e (DMSO) w on of new c
in Films bstrates (1.
ates. Thin amount of t
ance (T) sp ength () ctronic mod
sion sion
mission and ilm have th rency, while nm can be a 0nm related 75nm.
mittance and r
l constants damine B, W
ss energy w rum in the w
106,000-110 (Rh B) was was used a copolymer w
5cm x 1.5 films were the polyme pectra of th range of del HEλIOS
d reflectanc hree region e it had low attributed to d to low en
reflectance s
and disper Wemple an were also de
wavelength
0,000), hyd s provided b
s a solvent was showed
5cm) were e prepared er solution he prepared 300-800 n Sα v 4.60).
e spectrum s, first regi w value due o the So-S1
nergy transi
spectrum for
rsion param d DiDomen etermined.
range of 30
roxyl conte by Fluka w provide by d previously
washed by by using t PVA-g-Rh d samples w
nm using
of the prep ion in the
to the stron transition o ition. The h
PVA-g-Rh B
meters for a nico relation
The optical 00-800nm.
ent 99.9%, without any
y BGC com y [12].
y hot water the spin-co h B dissolv
was measur a double
pared PVA- wavelength ng absorban of Rh B dye highest val
B.
a new n was
l data
were other mpany.
r and oating ved in
red at beam
-g-Rh h ≥ nce in e [13]
lue of
[14]:
wher thick as sh dye.
relati
wher wave 650n and 2
3.2 Dete The opti
re T and d kness of sam hown in the
The extinc ion [14]:
re λ is the elength rang nm and anom
2.156 eV. T
F
ermination ical absorpt
d are the tr mples was k Fig.2 relate ction coeffi
wavelength ge of 300-8 malous disp This is due to
Fig. 2: The ab
the Extinc tion coeffic
ransmittanc kept as 3µm
ed to the co icient (k) a
h. The extin 800nm is sh
persion at o high energ
bsorption coe
n
ction Coeffi cient (α) ca
ce and thick m, high abso
opolymer ha and the refr
nction coef hown in Fig
< 650nm gy transitio
efficient vs. p 1) 1ln(
T
d
4 k
R n R
1 1
icient an be calcul
kness of th orption coef ave conjuga ractive inde
fficient (k) g. 3. Norma besides thr n.
photon energ
lated from
he thin film fficient at p ated system ex (n) are
and refract al dispersio ee peaks at
gy of PVA-g
transmissio
m, respectiv photon ener m in pendent calculated
tive index ( on is observ
t 3.542 eV,
g-Rh B.
67 on data as
(1)
vely. The rgy > 2eV t for Rh B using the
(2) (3)
(n) in the ved at >
2.917 eV
68
Fig. 3: Th 3.
A absorptio
where B index and forbidden (αh)1/2 v axis yield about 1.9
he absorption .3 Calcula According t on coefficien
is a parame d assume va n indirect t versus h fo
d the value 98eV .
Fig. 4 h)1/2 (eV/cm)1/ 2 α(
n index k and tion of Opt to Tauc's r nt can be de eter, depend alues 0.5, 2 transitions, or PVA-g-R
s of the opt
4: The (αhυ)1/
d refractive i tical Energ relation [15 escribed by:
αhυ = B ds on the tra
, 1.5 and 3 respectively Rh B film. T
tical band g
/2 vs. the pho
index n depen gy Gap
5, 16], the :
B(hυ-Egopt
ansition pro for allowed y. Fig. 4 sh The intercep
gap. The va
oton energy h(eV)
ndent on the
e photon e
) r obability, Eg
d direct, allo hows the a pts of the str alue of indir
of PVA-g-R
wavelength
energy dep
g is the optic owed indirec absorption c raight lines
rect allowed
Rh B thin film
h for PVA-g-R
pendence o
cal energy g ct, forbidde coefficient
with the ph d optical en
m.
Rh B.
of the
(4) gap and r an en direct and in the form hoton energy nergy gap i
n d m y s
absor absor photo
wher the lo of th photo photo
dispe appro energ The r
3.4 Urb For h ≤ rption, mul rption mech on energy a
re o is a co ocalized sta he localized
on energy on energy o
Fig.
3.5 Dis Wimple ersion is stu oximation.
gy, Ed, the m
relationship
bach Tail
≤ Eg there ltiphoton ab
hanism is u as:
onstant and ates at the co
states. The and taking of the curve
5: The relat persion Pa and DiDom udied in the
Defining t model concl ps between t
are four m bsorption an usually an
Eu is the U onduction o e value of E the recipro . The value
ionship betw arameters
menico [19 region of t two parame ludes:
the dispersi
n2
major absor nd high sca
Urbach tai
Urbach ener or valance b Eu is estima
ocals of the of Urbach
ween in and
9, 20] devel transparency
eters, the o
ion paramet
2 2
1 ( E
E E
o o
3 1 2
M Eo M
3 3 2 1
M Ed M
Eu
h oe
rption mech attering [17
l [18] whe
rgy (related band edge), ted from Fi e slope of energy is 1.
d photon ene
loped a mo y below the oscillation
ters and 2(
)2
h Ed
u
hanism, the 7]. In case re depen
to the widt it can be ev ig. 5, by plo the linear p .19eV.
ergy for PVA
odel where e gap, using energy, Eo
) spectrum
e Urbach ta of 104 nds exponen
th of the ba valuated as otting ln v portion in
A-g-Rh B.
the refract g the single
o and the d
m can be est
69 ail, defect
cm-1, the ntially on (5) and tail of the width versus the the lower
tive index oscillator dispersion
(6) timated as:
(7)
(8)
70 where M computat defined a The static
Plotting ( straight l axis equa
3.
T relation [
Fig. 7 sho is clear th mainly de
M-1, M-3 are tion of Eo
as:
c dielectric
(n2-1) versu line for nor al to(Eo/Ed).
.6 Comple The real and
[21, 22].
ows the rela hat the varia epends on k
e moment o and Ed. It
constant ca
us (h)2 as i rmal behavi . The value
Fig. 6: Plo ex Dielectri d imaginary
ationship be ation of ε1 m k values wh
of optical s is known t
an be written
llustrated in ior having
of Eo,Ed, M
ts of (n2-1)-1 c Constant y parts of th
etween real mainly depe hich are rela
)
(
li
E
r o
r
o o
n2 (
1
2spectrum an that static d
n in term of
n Fig. 6 for the slope ( M-1, M-3 and
against (hυ) t and Optic he dielectri
(1) and im ended on n2 ated to the v
2( )
im
o EE
n
o d
E o)1E
2
2
k
n
2 nk
2
nd the -1, - dielectric co
f dispersion
PVA-g-Rh EoEd)-1 and d n(o) are lis
)2 for PVA-g cal Conduc ic constant
maginary (2
because of variation of a
2
no
-3 moment onstant of a
parameters
h B thin film d intercept w
sted in Tabl
-Rh B.
tivity can be esti
2) part and p f small value absorption c
are involv any substan
s simply as:
ms, which y with the ve le 1.
imated usin
photon ener es of k2, wh coefficients
ved in nce is
(9)
(10)
yield a ertical
ng the
(11) (12) rgy. It hile ε2
s.
cond
wher Optic energ const deter
Whe
wher elect effec perm deter this d N/m*
Fig.
The opt ductivity (o
re c is speed
Fig. 8 sh cal conduct gy > 2eV tant separa rmined from
re B:
re 1, e, c, tron charge, ctive mass, mittivity of
rmined from It is obs dependence
*. The evalu
7: The relat tical respon
opt) which is
d of light.
how the re tivity Opt. w
decreasing.
ation of th m the follow
N/m*, an , the velocit
the high fr free space m the equati
served that e to zero w uated value
ionship betw nse of a m s given by th
lationship b were increa . This is a he real par wing relation
nd o are th ty of light, t requency di e (8.854x1
on (14) by p linear part avelength g s of the a
1 n
B
ween 1, 2 an material is he relation
between op ased with in analogue to rt and ima n [24]:
he real and the ratio of ielectric co 0-12 F/m).
plotting n2 ( at long wa give the val and N/m* w
4
nc
opt
2
2 k
n
2 2
2
4 c m
N e
o
nd photon en mainly stu [23]:
ptical condu ncreasing ph the α spe aginary par
d imaginary f the free ch onstant (the
The param (1 = n2 ) v avelengths.
lue of an were listed in
c
2
B
m*
nergy of PVA udied in te
uctivity opt
hoton energy ectrum. The
rt of diele
part of die hargecarrier
lattice diel meters a ersus 2 as Extrapolatin nd from the
n Table 1.
A-g-Rh B.
erms of th
t and photo gy and at hig
e complex ectric const
electric con r concentrat lectric cons and N/m*
shown in F ing the line e slope the
71 he optical
(13)
n energy.
gh photon dielectric tant were
(14)
(15) nstant, the
tion to the stant), the could be Fig. 9.
ar part of values of
72 T following
n0 is the part, was
Fig. 8: Opti
The average g relation [2
reflective i s below the
op (sec)-1 n2
cal conductiv
Fi interband 24]:
index at inf
absorption
vity opt as a
g. 9: n2 as a oscillator w
finite wavel
edge as sho
2 2
1
o 1 n n
a function of
function of s wavelength
length λ0, p own in Fig.
) (
1
o
h (eV
2(nm)2 x10
photon energ
square wavel (λ0)can be
. lotting (n2- 10.
)2
n2
V)
05
2(n
gy for PVA-
length.
calculated
1)-1 versus
nm)2 x105
-g-Rh B.
by applyin
λ-2 shows l ng the
(16)
linear
The a
The rule the t susce
Whe
average osc
value of at it is very co third order eptibility an ere A is a co
Fig.
Fi cillator stren
λo and So a onvenient f of nonline nd the linear
onstant, A=1
11: The rela
( ) 3 ( A(
(3) (esu)
ig. 10: (n2-1) ngth is given
are listed in for visible, n ear polariza
r optical sus
1.7×10-10.
ationship bet
4 ) 1
( ) A[EoEd
)-1 versus (λ- n by:
n Table 1. A nonlinear an ability param sceptibility,
tween χ(3) and
2 (
( 4
/ Eo h
d
2
2 1
o o o
S n
h (e
-2) for PVA-g
According to nd near infr meter, χ(3),
χ(1) can be
d photon ene
4 2
4 ] (
)
h
1
eV)
g-Rh B.
o Wagner e frared freque
the so-call found throu
ergy for PVA
4 2
4( 1)
) n A
et.el. [25], t encies, whi led nonline ugh the equ
A-g-Rh B.
73 (17)
the Miller ich relates ar optical uation:
(18)
74 F of prepar strongly i T loss of th The volu related to loss func constant
Where (- loss. The functions in the en from visi Lorentz from Fig
Fig. 12
ig. 11 show red PVA-g influence th The volume he fast elect ume energy o the real an ctions are r
by the follo
-Im [
∈]) is th e surface en s (1 and 2) nergy rang ible to VUV
oscillator d . 7. Many o
2: The relatio
ws the relati -Rh B thin he magnitud and surface rons traveli y loss funct
nd imaginar related to re owing relati
he volume t nergy and v ) are calcul
from 1eV V. Also the dielectric fu optical param
onship betwe
SEL VEL
ionship betw n film. The de of the non e loss funct ing through
tion (VELF ry parts of eal and ima
ons:
erm of ener volume ene ated and sh
to 3.5eV, r surface and unctions (1
meters were
een volume,
[ [
lm LF
lm LF
ween third covalency n-linearity.
tions are pro the bulk an F) and surf the comple aginary par
rgy loss and ergy loss fu hown in Fig
respectively d volume en and 2) ha e recorded in
surface ener
] [(
1 1 1]
2 1
2
order susce y and iconic
oportional t nd surface o face energy x dielectric rts ε1 and ε
d (-Im[
∈
unctions ge g. 12. The tw
y a typical nergy loss fu
ave the sam n Table 1.
gy and photo
) 1 2 22
1 2 2 2
eptibility an city of the to the chara of the mater y loss funct c function [2
2 of the co
]) is surfac enerated fro wo energies experiment unctions ge me oscillato
on energy for
2]
nd photon en chemical b acteristics en rial, respect
tion (SELF 26]. The en omplex diel
ce term of en om the diel
s were com tal energy enerated from
or shape as
r PVA-g Rh nergy bonds nergy ively.
F) are nergy-
ectric
(19) (20)
nergy ectric mputed range m the seen
B.
75 Table 1: Optical parameters of the prepared PVA-g-Rh B thin film.
Quantity Value
) (eV
EOptg 1.98
) (eV
EUrbach 1.19
)
E(eV 1.98
) (eV
Ed 46.78
2 1(eV)
M 23.62
2 3(eV)
M 6.02
n 2.10
4.43
1 3. ) ( /m m kg
N 2.79x1057
2.19
)
(nm
337
) (m2
S 3.02×1013
) )(
0
3(
esu 5.05x10-17
4. Conclusion
Optical transmission spectrum is used to calculate the optical and dielectric parameters for new copolymer PVA-g-Rh B thin film. The optical conductivity was increased with increasing photon energy. The refractive index dispersion curve was well fitted with Wemple DiDomenico relation and we find good agreement. Low transmission and reflective in visible range of polymeric thin film is useful to make the materials a prominent one for solar cell applications.
References
[1] C. Lawetz et al., J. Light Wave Technol. 15 (4) (1997)
[2] D. L. Andrews, Laser in Chemistry, Speringer-Verlage, Berlin (1997) [3] F. P. Schafer, Dye Lasers, Springer-Verlage, Berlin, 2nd edition (1977) 1
[4] M. Maeda, Laser Dyes, Properties of Organic Compounds of Laser Dyes, Academic Press Inc., Orlando (1984) 22
[5] M. Fujihara, M. Kubota and T. Osa, J. Electroanal. Chem. 119 (379) (1981) [6] E. Kato and T. Murakami, Polym. Gels Networks 6 (179) (1998)
[7] C. Zhang, G. Zhou, Z. Zhang and M. Aizawa, Anal. Chim Acta 165 (394) (1999) [8] S. P. Liu, Z. F. Liu and H. Q. Luo, Anal. Chim. Acta 407 (255) (2000)
76
[9] R. K. Ward, P. N. Nation, M. Maxwell, C. L. Barker and R. H. Clothier, Toxical.in Vitro 11 (633) (1997)
[10] H. M. Jabbar, E. M. Jaboori and A. Q. Abdullah, J. Basrah Res. (Sciences) 36 (3) (2010) 8-16
[11] M. Hamam, Y. A. EL-Gendy, M. S. Selim, N. H. Teleb and A. M. Salem, Chalcogenide Left. 6 (8) (2009) 359-365
[12] A. Q. Abdullah, S. SH. Al-L'aibi and W. A. S. Abdul Ghafor, Iraqi J. Polym. 3, (1) (1999) 85-92
[13] S. Sh. H. Al-L'aibi, "Study of Spectral Properties for Mixed Organic Dyes," M. Sc.
Thesis, University of Basrah, College of Science, Basrah-Iraq (1991)
[14] M. A Mahdi and S. K. J. Al-Ani, Int. J. Nanoelectronics and Materlials 5 (1) (2012) 11-24
[15] J. Tauc, Amorphous and liquid semiconductors, Plenum, London (1974)
[16] N. M. Amed, Z. Sauli, U. Hashim and Y. Al-Douri, Int. Nanoelectronics and Materials 2 (2) (2009) 189-195
[17] M. Ylilammi, T. Ranta-aho, Thin Solid Films 232 (56) (1993) [18] F. Urbach, Phys. Rev. B92 (1953) 1324
[19] M. Didomenico, S. H. Wemple, J. Appl. Phys. 40 (1969) 720 [20] S. H. Wemple, M. Didomenico, Phys. Rev. B3 (1971) 1338
[21] J. H. Nahida and R. F. Marwa, Eng. & Tech. Journal 29, 4 (2011) 698-708 [22] G. Wang and F. Gan, Materials Lett. 43 (2000) 6-10
[23] M. A. Mahdi, S. J. Kasem, J. J. Hassen, A. A. Swadi, S. K. J. Al-Ani, Int. J.
Nanoelectronics and Materials 2 (2) (2009) 163-172
[24] O. A. Azim, M. M. Abdel-Aziz and I. S. Yahia, Applied Surface Science 255 (2009) 4829- 4835
[25] M. Hemissi and H. Amardjia-Adnani, Digest J. Nanomaterials and Biostructures 2 (4) (2007) 299-305
[26] Wug-Dong Park, Trans. Electr. Electron. Mater. 13 (4) (2012) 196-199
