A simple and robust approach to reducing contact resistance in organic transistors
Item Type Article
Authors Lamport, Zachary A.;Barth, Katrina J.;Lee, Hyunsu;Gann,
Eliot;Engmann, Sebastian;Chen, Hu;Guthold, Martin;McCulloch, Iain;Anthony, John E.;Richter, Lee J.;DeLongchamp, Dean M.;Jurchescu, Oana D.
Citation Lamport ZA, Barth KJ, Lee H, Gann E, Engmann S, et al. (2018) A simple and robust approach to reducing contact resistance in organic transistors. Nature Communications 9. Available: http://
dx.doi.org/10.1038/s41467-018-07388-3.
Eprint version Publisher's Version/PDF
DOI 10.1038/s41467-018-07388-3
Publisher Springer Nature
Journal Nature Communications
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by/4.0/.
Download date 2023-12-07 20:01:51
Item License http://creativecommons.org/licenses/by/4.0/
Link to Item http://hdl.handle.net/10754/630245
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Supplementary Information for:
A simple and robust approach to reducing contact resistance in organic transistors
Lamport, et al.
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Supplementary Figure 1 | OFET characteristics for a diF-TES ADT device. Drain current as a function of gate-source voltage in a diF-TES ADT device with L = 40 µm and W = 800 µm, showing an on/off ratio greater than 107.
Supplementary Figure 2 | diF-TES ADT Ion/Ioff ratios. A summary of the on/off ratios from 615 diF-TES ADT devices.
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Supplementary Figure 3 | Gate voltage dependence of the field-effect mobility. Mobility vs.
gate-source voltage for the device shown in Figure 1 with L = 100 µm, W = 200 µm.
Supplementary Figure 4 | OFET characteristics of diF-TES ADT in the linear regime. ID vs.
VGS in the linear regime (VDS = -2V) for diF-TES ADT device for which the saturation transfer plot is shown in Figure 1b. For this device L = 100 µm, W = 200 µm, VTh = 3 V, µlin = 16 cm2V-1s-1.
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Supplementary Figure 5 | diF-TES ADT mobility statistics at varying deposition rates. The contact deposition rates are as follows: a, 0.5 Ås-1. b, 1 Ås-1. c, 2 Ås-1. d, 2.5 Ås-1. e, 3 Ås-1.
Supplementary Figure 6 | Solid state packing in the organic semiconductor. Side-view of the (001) orientation of the diF-TES ADT crystal.
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Supplementary Figure 7 | Image of a diF-TES ADT film. An optical micrograph of a spin- coated diF-TES ADT film on PFBT-treated Au showing the contact-induced crystallinity due to the interaction between the PFBT SAM and the diF-TES ADT molecules (L = 40 µm). The scale bar represents 200 µm.
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Supplementary Figure 8 | Gated transmission line method. Gated TLM measurements on diF- TES ADT OFETs fabricated with contacts deposited at varying rates. a, 0.5 Ås-1. b, 1 Ås-1. c, 2 Ås-1. d, 2.5 Ås-1. e, 3 Ås-1.
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Supplementary Figure 9 | Fast Fourier transforms. 2D fast Fourier transforms to show the relative peak frequency in AFM images, and therefore the distance between metal particles, on a, 0.5 Ås-1 Au and b, 2.5 Ås-1 Au where the scale bars indicate 200 µm-1. Points that are further out in reciprocal space indicate smaller spacing between particles in real space of the AFM images.
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Supplementary Figure 10 | Contact resistance of C16IDT-BT devices. a, Average field-effect mobility vs. contact deposition rate for C16IDT-BT devices. b, Width-normalized contact
resistance as a function of contact deposition rate. c, Schematic of bottom-contact, top-gate device structure. d, Equivalent circuit diagram showing the various sources of device resistance.
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Supplementary Figure 11 | C16IDT-BT devices. Histogram showing the results of 30 devices made using C16IDT-BT with a contact deposition rate of 0.5 Ås-1.
Supplementary Figure 12 | Image of a C16IDT-BT film. An optical micrograph of a spin- coated C16IDT-BT film on PFBT-treated Au contacts showing the uniformity of the polymer film (L = 50 µm).
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Supplementary Figure 13 | C16IDT-BT contact resistance. Gated TLM measurement on C16IDT-BT devices.