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CRC Press Analog BiCMOS Design Practices And Pitfalls Dec 1999 ISBN 0849302471 pdf

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Figure 1.4 Resistors are formed in silicon by placing dopants in a specific region.
Figure 1.14 The gate to body voltage, V GB is the sum of the surface po-
Figure 1.16 The channel resistance varies with x because channel voltage and therefore mobile charge varies with x.
Figure 2.1 The dependence of I C on V CE is described by the Early voltage
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