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THE STRUCTURE AND CHEMICAL COMPOSITION OF THE SEMICONDUCTOR MATTER SnS THIN FILM PREPARATION PRODUCT WITH EVAPORATION VACCUM TECHNIQUE TO SOLAR CELL APPLICATION.

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THE STRUCTURE AND CHEMICAL COMPOSITION OF THE SEMICONDUCTOR MATTER SnS THIN FILM PREPARATION PRODUCT WITH EVAPORATION VACCUM TECHNIQUE TO SOLAR

CELL APPLICATION

by: Ibrahim Aziz

09306141027

ABSTRACT

The purpose of the research was to understand the crystal structures, surface morphology, and chemical composition of SnS thin film by using evaporation technique.

The SnS thin film was preparated by evaporation technique, while physical properties was determined using X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), and Energy Dispersive Analysis X-Ray (EDAX).

The SnS thin film had orthrombik crystal structure with lattice parameters,

a = 4,30 Å, b = 11,09 Å, and c = 4,06 Å for the first sample, a = 4,31 Å, b = 11,08 Å, and c = 4,16 Å for the second sample, and a = 4,01 Å, b = 11,08 Å,

and c = 4,15 Å for the third sample. The result of Scanning Electron Microscope (SEM) analysis showed the surface of Tin Sulfide crystal where the size of the grain was 0,5 μm. The result of Energy Dispersive Analysis X-Ray (EDAX)

analysis showed that the chemical composition were Sn : 38,95 % and S : 13,78%.

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STRUKTUR DAN KOMPOSISI KIMIA BAHAN SEMIKONDUKTOR SnS LAPISAN TIPIS HASIL PREPARASI DENGAN TEKNIK VAKUM

EVAPORASI UNTUK APLIKASI SEL SURYA

Oleh: Ibrahim Aziz

09306141027

ABSTRAK

Penelitian ini bertujuan untuk mengetahui struktur kristal, morfologi permukaan, dan komposisi kimia lapisan tipis Timah Sulfida (SnS) dengan teknik Evaporasi.

Lapisan tipis SnS dipreparasi dengan teknik Evaporasi, sedangkan untuk mengetahui sifat fisik dilakukan karakterisasi menggunakan X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), dan Energy Dispersive Analysis X-Ray (EDAX).

Lapisan tipis SnS yang terbentuk memiliki struktur kristal orthorombik dengan parameter kisi, yaitu a = 4,30 Å, b = 11,09 Å, dan c = 4,06 Å untuk sampel pertama, a = 4,31 Å, b = 11,08 Å, dan c = 4,16 Å pada sampel kedua, dan a = 4,01 Å, b = 11,08 Å, dan c = 4,15 Å pada sampel ketiga. Hasil analisis Scanning Electron Microscope (SEM) menunjukkan bahwa struktur dan tekstur permukaan kristal SnS yang terbentuk dengan ukuran butiran (grain) yaitu

diperkirakan berukuran 0,5 μm. Hasil analisis Energy Dispersive Analysis X-Ray (EDAX) menunjukkan komposisi kimia sampel, yaitu unsur Sn = 38,95% dan S =13,78 %.

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