Voltage Tunable
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p-GaN Microfluidic Channels
(a) (c)
(b) Ni/Au Pad
100 µm 9.2 µm
p-GaN (1µm)
n-GaN (1µm)
100 µm
10 µm
5 mm
Undercut
p-GaN Anchored
Sidewall Ni/Au Pad Unetched n-GaN Bank 100 µm
(d)
(e) (f)
(g) No Bias With Bias
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-5.0E-05 0.0E+00 5.0E-05 1.0E-04 1.5E-04 2.0E-04
100 200 300 400 500 600
p-GaN Piezoresistive Strain Gauges
A
Wheatstone Bridge
R
∆ R
Time (s)
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Sub-Micron Scale p-GaN Suspended Structures
600 nm Beam Width
50 µm
p-GaN Thickness:
600 nm
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