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Unit 4 -
Introduction to Fabrication Technolgy
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Introduction to IC Fabrication Technology
Introduction to IC Fabrication Technology
Introduction to Fabrication Technolgy
Introduction to Fabrication Technolgy
Operational Introduction to Fabrication Technology Contd…
Process Flow for Fabrication of MOSFETs Operation of Enhancement Type MOSFET Operation of Depletion Type MOSFET Quiz : Week 4 Assignment 4 Assignment 4 - Solutions
Due on 2018-02-21, 23:59 IST.
1) 1 point
2) 1 point
3) 1 point
Week 4 Assignment 4
The due date for submitting this assignment has passed.
Submitted assignment
Which of the following is true in case of MOSFETs:
A) Surface field effect is the operation principle of MOSFETs
B) N-channel MOS transistors are faster than P-channel MOS transistor
Either A or B B
A
Both A and B No, the answer is incorrect.
Score: 0
Accepted Answers:
Both A and B
The gate voltage required for the conduction of an n-channel enhanced mode MOSFET having a threshold voltage of 2V is
0V 1V 2V
>2V
No, the answer is incorrect.
Score: 0
Accepted Answers:
>2V
Depletion type MOSFET can be operated with
Negative gate voltage only
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4) 1 point
5) 1 point
6) 1 point
7) 1 point
8) 1 point
Accepted Answers:
Positive as well as negative gate voltage
For same operating voltage (Vo), current through 2nd MOSFET is twice of the 1st one.
Thickness of gate oxide layer of the 1st MOSFET is 0.75 times of the 2nd MOSFET. Width of 1st MOSFET is 1.25 times of 2nd MOSFET. Find out the ratio of length of these two MOSFETs (L1:L2).
3.33 0.53 0.3 1.875
No, the answer is incorrect.
Score: 0
Accepted Answers:
3.33
The N-channel MOSFET is preferred than the P-channel MOSFET, as...
for same dimension MOSFET lesser voltage is reqired to switch on easier to fabricate
faster operation
N-MOS is TTL compatibality but P-MOS is not No, the answer is incorrect.
Score: 0
Accepted Answers:
faster operation
Compute iD , given µpCox (W/L) = 0.6 mA/V2 , Vtp = −3 V, VSG = 5V, VGD= 6V and λ = 0.25
0.18 A 1.2 m A 12 m A 0.8 A
No, the answer is incorrect.
Score: 0
Accepted Answers:
1.2 m A
Consider this PMOS with µpCox (W/L) = 0.4 mA/V2 , Vtp = −1 V and λ = 0 . For what values of VG, PMOS will be ON?
≥ 3V
> 4V
≤ 5V
< 3V
No, the answer is incorrect.
Score: 0
Accepted Answers:
≤ 5V
Find VD, given µnCox (W/L) = 0.6 mA/V2 , Vt = 0.7 V and ignore channel-width modulation
3 V
9) 1 point
10) 1 point
11) 1 point
0.33 V 3.16 V 4 V
No, the answer is incorrect.
Score: 0
Accepted Answers:
3.16 V
Find VS, given µnCox (W/L) = 0.6 mA/V2, Vtn = 0.75 V and λ = 0.
0.2 V 1 V -0.93 V - 0.84 V
No, the answer is incorrect.
Score: 0
Accepted Answers:
-0.93 V
Find R such that PMOS is in saturation with VOV = 0.6 V ( µpCox = 0.1 mA/V2 , W/L = 10/0.18 , Vtp = −0.4 V and λ = 0)
400 800 1 k 100
No, the answer is incorrect.
Score: 0
Accepted Answers:
800
An ideal p-channel MOSFET has the following parameters W=15 µm , µp = 300 cm2/V-s, L= 1.5 µm , tox = 350 Å, VTN =- 0.8 V If transistor is operating in non-saturation at VSD =0.5 V, then value of gm is
148 ms 28.6 ms 0.148 ms 286 ms
No, the answer is incorrect.
Score: 0
Accepted Answers:
0.148 ms
12) 1 point
13) 1 point
14) 1 point
15) 1 point
An ideal n-channel MOSFET has the following parameters W=30 µm , µn = 450 cm2/V-s, L= 2 µm , tox = 350 Å, VTN = 0.6 V If transistor is operating in saturation at VGS =4 V, then value of gm is
2.13 ms 0.123ms 48.6 ms 2.26 ms
No, the answer is incorrect.
Score: 0
Accepted Answers:
2.26 ms
Threshold voltage of an n-channel MOSFET can be increased by
Reducing the channel length Reducing the gate oxide thickness Increasing the channel doping concentration Reducing the channel doping concentration No, the answer is incorrect.
Score: 0
Accepted Answers:
Increasing the channel doping concentration
In MOSFET electron mobility is almost thrice of hole mobility. If same operating voltage (Vov) is applied for both P-MOS and N-MOS and these are carrying same current in saturation region. What is the ratio of W/L of N-MOS to P-MOS
1:3 1:9 9:1 3:1
No, the answer is incorrect.
Score: 0
Accepted Answers:
1:3
Consider an n-channel depletion-mode MOSFET having following parameters : VTN = -2.5 V, µnCox (W/2L) = 1.1 m A/V2, VGS = 0V and VDS =0.5 V, then current ID is
2.48 mA 5.56 mA 9.96 mA 6.43 mA
No, the answer is incorrect.
Score: 0
Accepted Answers:
2.48 mA
