Diameter-Controlled Growth of Single-Walled Carbon Nanotubes by Using Nano-diamond Particles
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For the application of EC devices (supercapacitor etc.), it is desired to directly grow the CNTs onto conducting substrates to fabricate electrodes.. This procedure not only
observed the formation of multiwalled CNTs MWCNTs after the heat treatment of SWCNT bundles at a temperature higher than 2200 °C.11 Later, a mechanism of SWCNT bundle coalescence, many
Unusual transport characteristics of nitrogen-doped single-walled carbon nanotubes Yo-Sep Min,1Eun Ju Bae,2Un Jeong Kim,2Eun Hong Lee,2Noejung Park,3 Cheol Seong Hwang,4and Wanjun
In particular, we consider1 n.mchiral semiconducting SWNTs with reported experimental optical gaps2zigzag9, 0,12, 0and15, 0‘metallic’SWNTs for which small band gaps have been reported
of Mechanical Engineering, Tokyo 113-8656, Japan 2Institut für Festkörper- und Werkstofforschung Dresden, D-01171 Dresden, Germany High-resolution electron energy loss spectroscopy
3 Cross sectional SEM images of the samples with mesoporous silica film, Co film thickness is a 50 nm, b 20 nm, c 5 nm and d 1nm b Co Mesoporous Silica Oxidized layer of Silicon
