Noise Equivalent Power

II. Modeling and Simulation of Terahertz Detector…

2.2 Simulation Results of Terahertz Detector

2.2.3 Noise Equivalent Power

For evaluate THz detector performance, noise parameter considered essential, which called noise equivalent power (NEP). Definition is, which is the incident power (sometimes per unit frequency range) producing a detector response equal to the noise voltage at the output of the device. NEP is calculated,

R N

V



NEP

(2.5)

a

V

P

R  Δu

(2.6)

Pa is the actual AC power 200 nW [52]. As shown in Fig. 2-21(a) DC characteristic of each gate length of MOSFET (400 nm, 350 nm, 300 nm, 250 nm, 200 nm, and 150 nm), Vth is 0.18, 0.19, 0.2, 0.22, 0.228, and 0.25V respectively. In Fig. 2-21(b) shows that photorespnse results function gate voltage in each gate length, as we discussed in chapter 2.2.3 photoresponse is proportional to gate length. Figure. 2-19(c) shows that channel resistance (Rch) and noise (N), these two parameter described as:

kTR

ch

N  4

(2.7)

D D

ch

I

R  V

(2.8)

where k is the boltzmann constant, Rch is channel resistance can be extracted in the MOSFET DC characteristic (Fig. 2-21(a)). NEP results show (Fig. 2-21(e)) that our NQS model as sensitive detectors of terahertz radiation.

-26-

Figure 2-21. Full protocol for determining Rv and NEP

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Chapter 3

Summary and conclusion

In this thesis, I have reviewed the present of state-of-the-art in terahertz detectors, and established benchmarks for competitive performances, we have discussed the operation of plasma wave terahertz devices models of terahertz response based upon existing theory. In chapter1. We discussed THz, application, detector theory, in chapter2 we are discussed modeling and simulation method about the TCAD and the SPICE. Terahertz frequency regime is the beyond the MOSFET cut-off frequency, election variation cannot react THz radiation signal. And other theory we compare plasma wave transit time and oscillation. Oscillation period smaller than plasma wave transit time we need to non-quasi- static analysis is needed. The solution of the non-quasi-static modeling we are using the quasi-plasma 2DEG in TCAD platform, SPICE modeling use new Elmore model for non-quasi-static modeling. And describe the boundary condition. For conventional operate to THz detector boundary condition is essential thing, we using the capacitor between gate and drain. Lager capacitor (1 pF) is AC short between the gate and drain. In lager capacitor is the attenuation of the drain side signal that makes the ac short the drain side, and charge asymmetry in the source and drain. In the TCAD platform we using the external capacitor, SPICE simulation platform we using the BSIM intrinsic parameter set to lager cap for ac short gate and drain.

Simulation results part show that, using the transient simulation in mixed mode signal. We are extracted the photoresponse successfully. In the Eq. 1.26 shows that photoresponse peak value occurred in the subthreshold region we see the simulation results the peak value occurred in the sub-threshold regime. And photoresponse enhancement method for modeling effectiveness. Changing the physical of the MOSFET (thin-oxide, gate length) that results show the following Eq. 1.26

We modeled plasmonic THz detector in SPICE with NQS model. This SPICE modeling can be applied as a future work.

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Chapter 4 Future Work

The purpose of the BSIM modeling is to the circuit simulation through a reliable model. Fig4.1 shows that the THz chip board for real time imaging. The THz chip board is consist of the 2×200 array of the THz detector. That each detector react terahertz wave, DC voltage output is happened than the output connected by multiplexer and dc amp connected. That the data is transmission to system, that is able to real time imaging.

Figure 4-1. Terahertz chip board

The block diagram terahertz chip board is cannot operate all of the terahertz as the same time. We using the de-multiplexer to select the on/off device. Multiplexer output is the DC voltage connect the MOSFET gate. So mixed signal is incident the detector that dc output is passing the multiplexer. And passing the dc amp. Actually, the whole system is the simulation able. It is able to cost, time effective development is available. Future work is apply to THz detector compact model in the simulation we can predict the response of the whole system and the, design concept is optimized.

Figure 4-2. Block diagram of the terahertz chip board

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