Organic Semiconductor EE 4541.617A 2009. 1stSemester
2009 3 10
Changhee Lee, SNU, Korea 1/22
Changhee Lee
School of Electrical Engineering and Computer Science Seoul National Univ.
[email protected] 2009. 3. 10.
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Carbon and Hybridization
Electronic Configuration of carbon: C=1s
22s
22p
22s 2p
hybridization: sp, sp
2, sp
3~4 eV
Covalent bonding energy for the s orbital:
3~4 eV per bond
2s y p, p , p
“In carbon, three possible hybridizations occur: sp, sp
2, and sp
3; other group IV elements such as Si, Ge exhibit primarily sp
3hybridization. Carbon differs from Si and Ge insofar as carbon does not have inner atomic orbitals except for the spherical 1s orbitals, and the absence of nearby inner orbitals facilitates hybridizations involving only valence s and p orbitals for carbon.”
Ref. R. Saito et al.“Physical Properties of Carbon Nanotubes” (Imperial College Press, 1998, Singapore) p.5.
+ = 2 ( )
1
s
1
φ φ
pxϕ = +
+ =
0
, 0 ,
1
, 1
: lity
Orthonorma ϕ
1ϕ
1= ϕ
2ϕ
2= ϕ
1ϕ
2= ϕ
2ϕ
1= sp hybridization
) 2 (
1 2
s
2
φ φ
pxϕ = −
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Ethylene (C
2H
4)
1 Molecules: Chemical Bonds
π∗ (antibonding orbital) C C
p
z2 β p
zEnergy
β α −
−
= E
β
) 2 (
1
2 1
*
φ φ
ψ
π= −
Changhee Lee, SNU, Korea 3/22
) 2 (
1
2
1
φ
φ ψ
π= +
π (bonding orbital) C C
β α +
+
= E
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Benzene Molecule
Number of π-electrons: N=6 ), (n 0 , 1, 2, 3)
6 cos( 2
2 = ± ±
+
= n
E α β π
β
α − 2 E
β α +
β α −
β α +
β α −
+1 - 1
+2 - 2
3
6 2π
β β α −
β α − 2
HOMO LUMO
Changhee Lee, SNU, Korea
Molecular orbitals4/22
β α + 2 β
α +
Energy states β
α +
0 6
β α + 2
β
α + HOMO
R. M. Nix, An Introduction to Molecular Orbital Theory, (http://www.chem.qmul.ac.uk/software/download/mo/)
Organic Semiconductor EE 4541.617A 2009. 1stSemester
π∗band
E
g∝ 1/Ν
πPolyacenes and para-phenyls
Anthracene
Naphthalene Tetracene Pentacene
Biphenyl P-Terphenyl
πband
π∗band
LUMO
Changhee Lee, SNU, Korea 5/22
Energy Band Structure
Poly(p-phenylene) PPP
p y
P-Quaterphenyl
HOMO E
gπband
Organic Semiconductor EE 4541.617A 2009. 1stSemester
0
2
(eV)
HOMO-LUMO gaps of polyacenes
HOMO-LUMO gap decreases with increasing π-conjugation.
4
6
8
lectron binding energy (
Gas Solid
Eg~5 3.9 3.1 2.2
Anthracene
Naphthalene Tetracene Pentacene
Benzene 10
E Gas
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Widths of HOMO and LUMO Bands
LUMO
HOMO
Changhee Lee, SNU, Korea 7/22
naphthalene anthracene tetracene pentacene
Y. C. Cheng, et al., J. Chem. Phys. 118,3764 (2003)
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Molecules Æ Macromolecules: HOMO, LUMO and Bands
Keep adding molecules
erg y π∗ band
E
LUMO
Changhee Lee, SNU, Korea 8/22
En e
π band
E
gHOMO
• The average energy separation between MOs decrease as n increases ÆFormation of bands.
• The HOMO-LUMO separation, ∆E = EHOMO – ELUMO, decreases as n increases.
• Energetically favored electron excitation is from the HOMO to the LUMO
• The interchain transfer integral (t) expresses the ease of charge transfer between two interacting chains: The larger the band- width (the magnitude of transfer integral), the higher the mobility.
Organic Semiconductor EE 4541.617A 2009. 1stSemester
π-conjugated Polymers: Energy bandgap
n E K
n
E
gopt( ) =
gopt( ∞ ) −
Changhee Lee, SNU, Korea 9/22
chain length n Energy gap (HOMO-LUMO) decreases with increasing π-conjugation.
Organic Semiconductor EE 4541.617A 2009. 1stSemester
E (k)
a
Equidistant C-C bond
1D metal
1-d system
E
Fa
− π
a 2
− π 0
a 2
π
a π
Wavevector k
Organic Semiconductor EE 4541.617A 2009. 1stSemester
2a
Bond alternation (dimerization)
semiconductor a
Equidistant C-C bond
1-D metal
E = E
pz- β - 2 t cos ka
Peierls instability ÆEnergy Band gap
Sir Rudolf E. Peierls
(CH)
xE
FE
gPeierls Gap
E (k)
1907-1995
Changhee Lee, SNU, Korea 11/22
0 π/2a
−π/2a
−π/a π/a
Wavevector k
R.E. Peierls Quantum Theory of Solids(Oxford University, London Chap.5(1955).
M. Rohlfing and S. G. Louie, Phys. Rev. Lett. 82, 1959
(1999)
Organic Semiconductor EE 4541.617A 2009. 1stSemester 4.0
3.5
3.0 R S n R n
PPP 3.0 eV PPV 2.4 eV Poly(3-octylthiophene)
P3OT 2.21 eV
Poly(2,5-pyridinediyl) PPY 3.1 eV MEH-PPV
2.25 eV
PFO 3.01 eV
n n
N N
π- π* Energy Gap of Conjugated Polymers
2.5 2.0 Band Gap (eV) 1.5
n
R n n
n OR
RO
S n
S n
trans-Polyacetylene PA 1.5 eV
Polydiacetylene PDA 1.7 eV
Polythiophene PT 2.0 eV Poly(thienylenevinylene)
PTV 1.8 eV
Changhee Lee, SNU, Korea 12/22
1.0 0.5
0.0Ref. N. C. Greenham and R. H. Friend, Solid State Physics 49, 1 (1995) p.13; A. Monkman et al., Phys. Rev. Lett. 86, 1358 (2001)
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Polyacetylene: SSH Hamiltonian
Su-Schrieffer-Heeger Hamiltonian
) )](
( [ ) 2 (
2
, 1 1, , , 1,0 2 1 . 2
s n s n s n s n n n s
n n
n n n
electronic elastic
kinetic
c c c c u u t u
K u M u
H H H H
+ + +
+ +
+
− + − +
− +
=
+ +
=
∑
∑
∑ α
2
1 α
2eV 4 . 1 : (CH)
xE
g∝
N b E a
c
g
= +
2 . where , 2 )]
1 1 [-(
exp 16 2 : gap Peierls
K πt λ α t λ
Δ
o
o
+ =
=
) (E E D
t
o2
Changhee Lee, SNU, Korea 13/22
N
cConjugation length
2to ΔoΔo
− 0 to
−2
π π*
o
E
g= 2 Δ 2a
π Δ
oΔ
o−
t
o− 2
0 E
g= 2 Δ
oOrganic Semiconductor EE 4541.617A 2009. 1stSemester
DOS and Absorption
O
O
pol [2 metho 5 (2’ eth l he lo ) l 4 phen lene in lene]
Density of States (DOS):
Square-root singularity in 1-d.
T. W. Hagler et al., Phys. Rev. B 51, 14199 (1995)
dE E E
gE E dN
D = ( ) ∝ 1 − )
(
poly[2-methoxy-5-(2’-ethyl-hexyloxy)-l,4-phenylene vinylene]
MEH-PPV
Organic Semiconductor EE 4541.617A 2009. 1stSemester
PL and Absorption of Conjugated Polymers
Changhee Lee, SNU, Korea 15/22
poly (9-hexyl-9-(2'-ethyl-hexyl)-fluorene-2,7-diyl) (HEH-PF)
E. K. Miller, G. S. Maskel, C. Y. Yang, A. J. Heeger, Phys. Rev. B 60, 8028 (1999)
Organic Semiconductor EE 4541.617A 2009. 1stSemester
//
poly(9,9-dioctylfluorene) PFO
Polarized absorption, PL and EL
C8H17 C8H17
⊥
//
//
Changhee Lee, SNU, Korea 16/22
K. S. Whitehead, M. Grell, D. D. C. Bradley, M. Jandke and P. Strohriegl, App. Phys. Lett. 76, 2946 (2000).
⊥
⊥
Organic Semiconductor EE 4541.617A 2009. 1stSemester
• Strong electron-phonon coupling:
π-electron bond densities directly determine the geometric structure, e.g., butadiene, C
4H
6.
Electron-Phonon coupling
1.33 Å
1.33 Å 1.47 Å
• Vibronic progressions in optical absorption and photoluminescence spectra
• Stokes shift between optical absorption and emssion
Changhee Lee, SNU, Korea 17/22
* Charge transfer or low energy charge-excitations (via dong or photoexcitation) strongly affects the p-electron bond densities Æ geometric structure.
Stokes shift between optical absorption and emssion.
• Polaron formation
Organic Semiconductor EE 4541.617A 2009. 1stSemester
A B
S
0Polyacetylene (CH)
xSoliton
S (neutral Soliton)
π∗-band
π∗-band π∗-band
π-band
S
+Charge Q = +1
Spin S = 0 π-band
S
0Charge Q = 0
Spin S = 1/2
S - Charge Q = -1
Spin S = 0
π-band
Organic Semiconductor EE 4541.617A 2009. 1stSemester
π∗-band π∗-band
P−
E
P+
E
+
−−
= P P
g E E
E
Polaron
Polaron = charge + lattice distortion
hole polaron (P+) electron polaron (P-)
π-band π-band
π-band π-band π-band
Changhee Lee, SNU, Korea 19/22
hole polaron (P+) π∗-band
electron polaron (P-) π∗-band Eoptical
π∗-band Singlet exciton (P-···P+)
P−
E
P+
E
Eg
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Exciton Energies of π -Conjugated Polymers
Changhee Lee, SNU, Korea 20/22
A. Monkman et al., Phys. Rev. Lett. 86, 1358 (2001)
Organic Semiconductor EE 4541.617A 2009. 1stSemester 1.0
0.8 0.6 0.4
orbance (arb. unit)
Alq3
N O
N O N OAl
Eoptical~ 2.75 eV
Bandgap, Exciton binding energy
0.2 0.0
Abso
700 600 500 400 300
Wwavelength (nm)
optical
Changhee Lee, SNU, Korea 21/22
S. F. Alvarado, L. Rossi, P. Muller, P. F. Seidler, W. Riess, IBM J. Res. Dev. 45,89 (2001)
Alq3
From z–V measurements, Egsp= 2.96 ±0.13 eV.
Threshold for optical absorption: Ea = 2.75 eV, ÆEb= 220 ±130 meV.
Organic Semiconductor EE 4541.617A 2009. 1stSemester
Energy levels of π-conjugated molecule in the gas, crystalline and amorphous state
eff b eff G
S
I P E
I = −
+− (
+) Solid-state ionization potential
•Weak van der Waals interaction between molecules ÆEach molecule keep its molecular levels which are shifted due to the interaction with surrounding molecules in the solid-state.
eff b eff G
S
A P E
A = +
−+ (
−) Solid-state electron affinity
gy level
Gaussian density of localized states FWHM: ~ 200 meV
Ener g
Density of state
transport states trap
states impurity trap
states