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Organic Semiconductor EE 4541.617A 2009. 1stSemester

2009 3 10

Changhee Lee, SNU, Korea 1/22

Changhee Lee

School of Electrical Engineering and Computer Science Seoul National Univ.

[email protected] 2009. 3. 10.

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Carbon and Hybridization

Electronic Configuration of carbon: C=1s

2

2s

2

2p

2

2s 2p

hybridization: sp, sp

2

, sp

3

~4 eV

Covalent bonding energy for the s orbital:

3~4 eV per bond

2s y p, p , p

“In carbon, three possible hybridizations occur: sp, sp

2

, and sp

3

; other group IV elements such as Si, Ge exhibit primarily sp

3

hybridization. Carbon differs from Si and Ge insofar as carbon does not have inner atomic orbitals except for the spherical 1s orbitals, and the absence of nearby inner orbitals facilitates hybridizations involving only valence s and p orbitals for carbon.”

Ref. R. Saito et al.“Physical Properties of Carbon Nanotubes” (Imperial College Press, 1998, Singapore) p.5.

+ = 2 ( )

1

s

1

φ φ

px

ϕ = +

+ =

0

, 0 ,

1

, 1

: lity

Orthonorma ϕ

1

ϕ

1

= ϕ

2

ϕ

2

= ϕ

1

ϕ

2

= ϕ

2

ϕ

1

= sp hybridization

) 2 (

1 2

s

2

φ φ

px

ϕ = −

(2)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Ethylene (C

2

H

4

)

1 Molecules: Chemical Bonds

π∗ (antibonding orbital) C C

p

z

2 β p

z

Energy

β α −

= E

β

) 2 (

1

2 1

*

φ φ

ψ

π

= −

Changhee Lee, SNU, Korea 3/22

) 2 (

1

2

1

φ

φ ψ

π

= +

π (bonding orbital) C C

β α +

+

= E

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Benzene Molecule

Number of π-electrons: N=6 ), (n 0 , 1, 2, 3)

6 cos( 2

2 = ± ±

+

= n

E α β π

β

α − 2 E

β α +

β α −

β α +

β α −

+1 - 1

+2 - 2

3

6 2π

β β α −

β α − 2

HOMO LUMO

Changhee Lee, SNU, Korea

Molecular orbitals

4/22

β α + 2 β

α +

Energy states β

α +

0 6

β α + 2

β

α + HOMO

R. M. Nix, An Introduction to Molecular Orbital Theory, (http://www.chem.qmul.ac.uk/software/download/mo/)

(3)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

πband

E

g

∝ 1/Ν

π

Polyacenes and para-phenyls

Anthracene

Naphthalene Tetracene Pentacene

Biphenyl P-Terphenyl

πband

πband

LUMO

Changhee Lee, SNU, Korea 5/22

Energy Band Structure

Poly(p-phenylene) PPP

p y

P-Quaterphenyl

HOMO E

g

πband

Organic Semiconductor EE 4541.617A 2009. 1stSemester

0

2

(eV)

HOMO-LUMO gaps of polyacenes

HOMO-LUMO gap decreases with increasing π-conjugation.

4

6

8

lectron binding energy (

Gas Solid

Eg~5 3.9 3.1 2.2

Anthracene

Naphthalene Tetracene Pentacene

Benzene 10

E Gas

(4)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Widths of HOMO and LUMO Bands

LUMO

HOMO

Changhee Lee, SNU, Korea 7/22

naphthalene anthracene tetracene pentacene

Y. C. Cheng, et al., J. Chem. Phys. 118,3764 (2003)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Molecules Æ Macromolecules: HOMO, LUMO and Bands

Keep adding molecules

erg y π∗ band

E

LUMO

Changhee Lee, SNU, Korea 8/22

En e

π band

E

g

HOMO

• The average energy separation between MOs decrease as n increases ÆFormation of bands.

• The HOMO-LUMO separation, ∆E = EHOMO – ELUMO, decreases as n increases.

• Energetically favored electron excitation is from the HOMO to the LUMO

• The interchain transfer integral (t) expresses the ease of charge transfer between two interacting chains: The larger the band- width (the magnitude of transfer integral), the higher the mobility.

(5)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

π-conjugated Polymers: Energy bandgap

n E K

n

E

gopt

( ) =

gopt

( ∞ ) −

Changhee Lee, SNU, Korea 9/22

chain length n Energy gap (HOMO-LUMO) decreases with increasing π-conjugation.

Organic Semiconductor EE 4541.617A 2009. 1stSemester

E (k)

a

Equidistant C-C bond

1D metal

1-d system

E

F

a

− π

a 2

− π 0

a 2

π

a π

Wavevector k

(6)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

2a

Bond alternation (dimerization)

semiconductor a

Equidistant C-C bond

1-D metal

E = E

pz

- β - 2 t cos ka

Peierls instability ÆEnergy Band gap

Sir Rudolf E. Peierls

(CH)

x

E

F

E

g

Peierls Gap

E (k)

1907-1995

Changhee Lee, SNU, Korea 11/22

0 π/2a

−π/2a

−π/a π/a

Wavevector k

R.E. Peierls Quantum Theory of Solids(Oxford University, London Chap.5(1955).

M. Rohlfing and S. G. Louie, Phys. Rev. Lett. 82, 1959

(1999)

Organic Semiconductor EE 4541.617A 2009. 1stSemester 4.0

3.5

3.0 R S n R n

PPP 3.0 eV PPV 2.4 eV Poly(3-octylthiophene)

P3OT 2.21 eV

Poly(2,5-pyridinediyl) PPY 3.1 eV MEH-PPV

2.25 eV

PFO 3.01 eV

n n

N N

π- π* Energy Gap of Conjugated Polymers

2.5 2.0 Band Gap (eV) 1.5

n

R n n

n OR

RO

S n

S n

trans-Polyacetylene PA 1.5 eV

Polydiacetylene PDA 1.7 eV

Polythiophene PT 2.0 eV Poly(thienylenevinylene)

PTV 1.8 eV

Changhee Lee, SNU, Korea 12/22

1.0 0.5

0.0Ref. N. C. Greenham and R. H. Friend, Solid State Physics 49, 1 (1995) p.13; A. Monkman et al., Phys. Rev. Lett. 86, 1358 (2001)

(7)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Polyacetylene: SSH Hamiltonian

Su-Schrieffer-Heeger Hamiltonian

) )](

( [ ) 2 (

2

, 1 1, , , 1,

0 2 1 . 2

s n s n s n s n n n s

n n

n n n

electronic elastic

kinetic

c c c c u u t u

K u M u

H H H H

+ + +

+ +

+

− + − +

− +

=

+ +

=

∑ α

2

1 α

2

eV 4 . 1 : (CH)

x

E

g

N b E a

c

g

= +

2 . where , 2 )]

1 1 [-(

exp 16 2 : gap Peierls

K πt λ α t λ

Δ

o

o

+ =

=

) (E E D

t

o

2

Changhee Lee, SNU, Korea 13/22

N

c

Conjugation length

2to Δo

Δo

− 0 to

−2

π π*

o

E

g

= 2 Δ 2a

π Δ

o

Δ

o

t

o

− 2

0 E

g

= 2 Δ

o

Organic Semiconductor EE 4541.617A 2009. 1stSemester

DOS and Absorption

O

O

pol [2 metho 5 (2’ eth l he lo ) l 4 phen lene in lene]

Density of States (DOS):

Square-root singularity in 1-d.

T. W. Hagler et al., Phys. Rev. B 51, 14199 (1995)

dE E E

g

E E dN

D = ( ) ∝ 1 − )

(

poly[2-methoxy-5-(2’-ethyl-hexyloxy)-l,4-phenylene vinylene]

MEH-PPV

(8)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

PL and Absorption of Conjugated Polymers

Changhee Lee, SNU, Korea 15/22

poly (9-hexyl-9-(2'-ethyl-hexyl)-fluorene-2,7-diyl) (HEH-PF)

E. K. Miller, G. S. Maskel, C. Y. Yang, A. J. Heeger, Phys. Rev. B 60, 8028 (1999)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

//

poly(9,9-dioctylfluorene) PFO

Polarized absorption, PL and EL

C8H17 C8H17

//

//

Changhee Lee, SNU, Korea 16/22

K. S. Whitehead, M. Grell, D. D. C. Bradley, M. Jandke and P. Strohriegl, App. Phys. Lett. 76, 2946 (2000).

(9)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

• Strong electron-phonon coupling:

π-electron bond densities directly determine the geometric structure, e.g., butadiene, C

4

H

6

.

Electron-Phonon coupling

1.33 Å

1.33 Å 1.47 Å

• Vibronic progressions in optical absorption and photoluminescence spectra

• Stokes shift between optical absorption and emssion

Changhee Lee, SNU, Korea 17/22

* Charge transfer or low energy charge-excitations (via dong or photoexcitation) strongly affects the p-electron bond densities Æ geometric structure.

Stokes shift between optical absorption and emssion.

• Polaron formation

Organic Semiconductor EE 4541.617A 2009. 1stSemester

A B

S

0

Polyacetylene (CH)

x

Soliton

S (neutral Soliton)

π∗-band

π∗-band π∗-band

π-band

S

+

Charge Q = +1

Spin S = 0 π-band

S

0

Charge Q = 0

Spin S = 1/2

S - Charge Q = -1

Spin S = 0

π-band

(10)

Organic Semiconductor EE 4541.617A 2009. 1stSemester

π∗-band π∗-band

P

E

P+

E

+

= P P

g E E

E

Polaron

Polaron = charge + lattice distortion

hole polaron (P+) electron polaron (P-)

π-band π-band

π-band π-band π-band

Changhee Lee, SNU, Korea 19/22

hole polaron (P+) π∗-band

electron polaron (P-) π∗-band Eoptical

π∗-band Singlet exciton (P-···P+)

P

E

P+

E

Eg

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Exciton Energies of π -Conjugated Polymers

Changhee Lee, SNU, Korea 20/22

A. Monkman et al., Phys. Rev. Lett. 86, 1358 (2001)

(11)

Organic Semiconductor EE 4541.617A 2009. 1stSemester 1.0

0.8 0.6 0.4

orbance (arb. unit)

Alq3

N O

N O N OAl

Eoptical~ 2.75 eV

Bandgap, Exciton binding energy

0.2 0.0

Abso

700 600 500 400 300

Wwavelength (nm)

optical

Changhee Lee, SNU, Korea 21/22

S. F. Alvarado, L. Rossi, P. Muller, P. F. Seidler, W. Riess, IBM J. Res. Dev. 45,89 (2001)

Alq3

From zV measurements, Egsp= 2.96 ±0.13 eV.

Threshold for optical absorption: Ea = 2.75 eV, ÆEb= 220 ±130 meV.

Organic Semiconductor EE 4541.617A 2009. 1stSemester

Energy levels of π-conjugated molecule in the gas, crystalline and amorphous state

eff b eff G

S

I P E

I = −

+

− (

+

) Solid-state ionization potential

Weak van der Waals interaction between molecules ÆEach molecule keep its molecular levels which are shifted due to the interaction with surrounding molecules in the solid-state.

eff b eff G

S

A P E

A = +

+ (

) Solid-state electron affinity

gy level

Gaussian density of localized states FWHM: ~ 200 meV

Ener g

Density of state

transport states trap

states impurity trap

states

Referensi

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