Electrical Properties of

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Electrical Properties of High Voltage Rectifier Diodes Simulated Using Athena and Atlas

by

Muhammad Firdaus Bin Suid FINAL REPORT

Dissertation submitted in partial fulfilment of the requirements for the

Bachelor of Engineering (Hons) (Electrical and Electronic Engineering)

Universiti Teknologi Petronas Bandar Seri Iskandar 31750 Tronoh

Perak Darul Ridzuan

Muhammad Firdaus Bin Suid, 2011

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CERTIFICATION OF APPROVAL

Electrical Properties of High Voltage Rectifier Diodes Simulated Using Athena And Atlas

Approved by,

by

Muhammad Firdaus Bin Suid

A project dissertation submitted to the Electrical and Electronic Engineering Programme

Universiti Teknologi PETRONAS in partial fulfilment of the requirement for the

BACHELOR OF ENGINEERING (Hons) (ELECTRICAL AND ELECTRONIC ENGINEERING

(Dr. Zainal AriffBurhanuddin)

UNIVERSITI TEKNOLOGI PETRONAS TRONOH, PERAK

MAY2011

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CERTIFICATION OF ORIGINALITY

This is to certify that I am responsible for the work submitted in this project, that the original work is my own except as specified in the references and acknowledgements, and that the original work contained herein have not been undertaken or done by unspecified sources or persons.

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MUHAMMAD FIRDAUS BIN SUID

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ABSTRACT

As the title for this project, this fmal report for FYP 2 will include and conclude all the work and research that I have done regarding the Electrical properties of High Voltage Rectifier diodes simulated using Athena and Atlas. The objective of this project is to simulate the fabrication process of the High Voltage Rectifier based on the curve trace data gain during my internship in a semiconductor company. This report will summarize the work done on of the project. First chapter will give a brief description about the background of the project. There is also problem statement and some objectives included in this chapter. Second chapter will concentrate more on the study on the theory of High Voltage Rectifier diodes. Three important part of the High Voltage p-n junction will be discussed which is; the structure of a high voltage p-n junction, comparison between available structure and the electrical characteristics of each structure. The latest progress is on the research for the most suitable material for the high voltage diodes. In third chapter, there is a chart describing a methodology on how this project to be carried on. The chart has been followed to avoid any disturbance so that this project can be completed as planned.

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ACKNOWLEDGEMENT

Alhamdulillah is the best words that I can say for my grateful to Allah the Almighty god as for His mercy He gave me and the strength and ability to overcome the obstacle to complete this final year project throughout the year. I would like to take this opportunity to thank all parties involved both mentally and emotionally in helping me to be able to finish this Final year Project. Deepest gratitude goes to my parents, Suid Bin Salleh and Samsiah Binti Hassan for their continuous doa(pray), motivation, and nonstop moral support.

I would like to thank Dr. Zainai Ariff Burhanuddin for patience in guidance in helping me pursuing this project. I am very thankful to god as He has given me a chance to be working under the supervision of Dr. Zainal, for his guidance surely have help me during the times of needs.

I would like to thank everyone for their continuous support especially my colleagues and fellow friend for these elements have successfully assisted me to do my best and effort in upholding the learning spirit during my whole lifetime studying in UTP. Thank you once again and only Allah the God Almighty and The Most Merciful can repay all of your kindness.

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TABLE OF CONTENTS

CERTIFICATION OF APPROVAL CERTIFICATION OF ORIGINALITY ABSTRACT .

ACKNOWLEDGEMENTS.

ii iii iv v LIST OF TABLES . ix

LIST OF FIGURES . X

CHAPTER 1: INTRODUCTION ₁

1 2 2 CHAPTER2: 3

1.1 Background of Study • 1.2 Problem Statement

1.3 Objectives and Scope of Study LITERATURE REVIEW .

2.1 Reviews on Doping Profile for P-N

Junction. 4

2.1.1 Abrupt Junction 4

2.1.2 Linearly Graded Junction 5 2.2 Understanding The Current-Voltage

Characteristic Of A PN-Junction 6

2.3 Junction Breakdown . 7

2.3.1 Thermal Instability 7

2.3.2 Tunnelling Effect 8

2.3.3 Avalanche Multiplication 10 2.4 Comparison between High Voltage Power

Rectifier Structures . 11

2.4.1 The structure of a high voltage p-njunction. .

2.5 Device Structure and Operation 2.5.1 P-i-N rectifier .

2.5.2 MPS rectifier . 2.3.3 SSD rectifier .

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12 12 12 12 13

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2.6 Blocking Characteristics 14 2.7 Selecting the Most Suitable Material for

High Voltage Diodes .. 15

2.7.1 List of Band Gaps 16

2.7.2 The Forward and Reverse

Characteristics of Silicon Carbide Diodes at High Temperatures. 17

CHAPTER3: METHODOLOGY . 18

3.1 Research Methodology 18

3.2 Methodology • 18

CHAPTER4: RESULTS AND DISCUSSION 21 4.1 Simulation on PN Junction Diode

Structures. 21

4.1.1 Basic PN Junction 21

4.1.2 Simulation on MPS Rectifier . 24 4.2 Alpha-SiC Diode DC Forward, Reverse, 26

and Breakdown Characteristics

4.2.1 Silicon Carbide Diode Structure. 26 4.2.2 Forward Voltage Characteristics. 28 4.2.3 Breakdown Voltage Characteristics. 29

4.3 Discussion 31

4.3.1 Effect of Doping Concentration

to the 1-V Curve. 31

4.3.2 Effect Of Increasing The Region Length Of The P+ Region In MPS

Rectifier. 31

4.3.3 Effect of Using Silicon Carbide

Diode Structure. 32

CHAPTERS: CONCLUSION 33

5.1 Conclusion 33

5.2 Recommendation 33

REFERENCES 34

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