אא
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166 166
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1
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א
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K٪90
אאאא 4W
אא W
J
א
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Power point
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K
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W
אאאא
J1
1 Introduction
א
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(doping)
K
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א
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J
(n-type) n
א
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J
p (p-type)
K
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J
אn
J
אאp
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n
p
א
K
א
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Kp-n
J1
א2
p-n The p-n Junction Diode
א
p-n
(Continuous and single crystal)
אא
אא
(Donor impurity)
אא
א
(Acceptor impurity)
K
א
א
p-n
n-
(n-type)
p- (p-type)
אא
א
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א
K
F
J1
E1
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א
K
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p-
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(anode)
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n-
א
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(cathode)
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ﺔﻠﺻﻮﻟا p-n
(A) (K)
א p n א
א
(K)
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F
J1
E1
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F
J1
E2
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F
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E
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p-
א
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(Holes)
א
(Electrons)
אאאא،אא
n-
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K
J1
א3
אאp-n at Equilibrium
The p-n Junction Diode
א
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א
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א
n
p
F
J1
KE3
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p
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p
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p
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n
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(space-charge)
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(Depletion Region)
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(Transition Region)
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.(Space-charge Region)
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J1
E4
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Bias
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J
p
J
Kn
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(Reverse Bias)
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J
p
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K
J1
J4
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Forward Bias
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p
א
א
J
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א
F
J1 E5
،
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א
אאאא
K
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(Forward current)
If
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אא
א
K
אאאא
אא
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F
J1 E6
،
א
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K
א
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.0.3V
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א
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n (Rn)
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p (Rp)
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א
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א
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J1
J4
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Reverse Bias
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p
א
א
J
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א
F
J1 E7
،
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K
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א
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(Reverse saturation current)
Io
K
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אאאא،אאא
אאאא K
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א
Rn
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J1
אא5
א
Characteristics of the Semiconductor
Diode
אאאא
אאאא
א
אאאא
K
F
J1
E8
אא
א
א(Si) .(Ge)
אא
אאא
א
אאאא
F
א
E
אאא
.(Breakdown voltage)
VBR
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F
J1
E8
אאאא
א
אאאא،אאא
אאאא
אאא0.7V
אאא0.3V
K
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א
א
א
א
K
אאאאאאאא
،אאאאא
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א
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א
50V
א
K
F
J1
E8
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א
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א
،אאא
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K
J1
אא6
Element
The Diode as a Circuit
אא
א
F
J1
E9
א
אD RL
א
Vi
K
אא • The Load Line and Operating Point
אאאאאא
F
J1
KE9
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א
W
F
J1
E1
Vi = VD + ID RL
א
ID
, VD
ID
, VD
אאא
F
J1
KE10
אא
F
J1
E1
אאא
F
J1
E10
،
אאאא
אא
ID
א
אא
VD = 0
W
F
J1
E2
Vi / RL
=
ID
אאאאא
VD
אא
א
ID = 0
W
F
J1
E3
= Vi
VD
אאאא
Q
א
K
א
אאאאאאאא
אאא
א
F
J1
E4
VL = ID RL = Vi - VD
J1 W1
אא
F
J1
E9
א
= 50 Ω
RL
V
= 1.5
Vi
،
אאאאאאאאאאא
،א
אא
F
J1 KE11
א W
RL
Vi
א
F
J1 E2
אא،
W
= 30 mA
/ 50 Ω
= 1.5 V
Vi / RL
=
ID
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א
F
J1 E3
אא،
W
= Vi = 1.5 V
VD
אאאא
אאQ
א
IDQ
אאא
15 mA
אאאא
VDQ
0.75V
K
אאאא
VL
אא
F
J1
E4
W
VL = Vi - V D = 1.5 V - 0.75 V = 0.75 V
J1
א7 Diode Resistance
J1
J7
אא1
Rs
StaticResistance
אא
Rs
אאאאא
VD
אאא
ID
אאא
אא
K
אאא
א
W
F
J1
E5
D S D
I R =V
א
אאא
אא
א
א K
J1
J7
אא2
rd
DynamicResistance
אאאאא
אא
Q
א
W
F
J1
E6
point
| Q D d D
I r V
∆
=∆
א
א،אא
אאאאא
K
J1
אאא8
The Diode Equivalent Circuit
א
אא
،
אא
אא
אאאא
F
J1
12
KE
אא
אאא
אא
VB
אא
אא،אאאא،
אא
(forward resistance)
Rf
،
אאא
אא
F
J1
12 KE
אאאא
א
Rr
אא
(Reverse resistance)
אאאא،
F
J1
12 KE
אא •
The Ideal Diode
א
K
F
J1
13
E
אא
J
אאא K
אא
ID
אאאא
א
VD
א
K
א
ID
אא
א
אא
א
VD
،
אאא
(short-circuit)
אא
Rf = 0
VB = 0
F
F
J1
13 EE
אא،
(open-circuit)
א
א
Rr = ∞
F
F
J1
13 KEE
J1
א9
א Si
Ge
Comparison between Silicon and Germanium Diodes
F
J1
E1
אאא
K
א
א
א
אא
0.7 V 0.3 V
אא
50 V 20 V
א
200oC 100oC
א
אא
אאאאא
אאאאא