Dr. Khalid Al-Hindi
N-type and P-type Materials
Proprieties
لاؤس : رثكلاا لقانلا وه ام ةداملا يف لقلاا لقانلاو
n-type material
؟
باوج :
رثكلاا لقانلا majority carrier
electrons وه
لقلاا لقانلاو minority carriers
holes وه
يلاتلا لكشلا رظنا
3
In n-type semiconductors, electrons are the majority carriers and holes are the minority carriers.
لاؤس : ةدام ةيمست ببس ام n-type material
؟ مسلاا اذهب
باوج :
رثكلاا لقانلا نلا ببسلا majority carrier
وه اهيف electrons
ةبلاس ةنحش لمحي وهو negative
يلاتلا لكشلا رظنا
4
The term n-type comes from the negative charge of the electron.
لاؤس : رثكلاا لقانلا وه ام ةداملا يف لقلاا لقانلاو
p-type material
؟
باوج :
رثكلاا لقانلا majority carrier
holes وه لقلاا لقانلاو
minority carriers electrons وه
يلاتلا لكشلا رظنا
5
In p-type semiconductors, holes are the majority carriers and electrons are the minority carriers.
لاؤس : ةدام ةيمست ببس ام p-type material
؟ مسلاا اذهب
باوج :
رثكلاا لقانلا نلا ببسلا majority carrier
وه اهيف holes
ةبجوم ةنحش لمحي وهو positive
رظنا
يلاتلا لكشلا
6
The term p-type comes from the positive charge of the holes.
P-N Junction
لاؤس : نيتداملا عنص نم ةدئافلا يه ام n-type material
و p-type material
؟
باوج :
يلاتلا لكشلا رظنا ةفلتخملا ةينورتكللاا ةزهجلاا ةعانص يف نيتيساسلاا نيتداملا امهنلا
8
The n-type and p-type materials represent the basic building blocks of semiconductor devices.
لاؤس : نيتداملا نم ةدافتسلاا متي فيك n-type material
و p-type material
؟
باوج :
ب فرعي ام نيوكتو امهضعب راوجب نيتداملا ةعانصب كلذ متي p-n junction
يلاتلا لكشلا رظنا
9
Joining of a single n-type material with a p-type material will result in a semiconductor element of considerable importance in electronic systems.
لاؤس : وه ام p-n junction
؟
باوج :
يلاتلا لكشلا رظنا ضعبلا امهضعب راوجب نيتداملا عضوب هتعانص متي زاهج وه
10
A p-n junction is created by simply joining an n-type and a p-type material together, nothing more, just the joining of one material with a majority carrier of electrons to one with a majority carrier of holes.
لاؤس : دوجو ىلع دامتعلااب ةعونصملا ةينورتكللاا ةزهجلاا رهشا يه ام p-n junction
؟
باوج :
يلاتلا لكشلا يف نيحضوم مهرهشا
11
Transistor
JFET Diode
P-N Junction Physics
لاؤس : عنص دعب ةرشابم ثدحي اذام p-n junction
؟
باوج :
ىمست ةيطسو ةقطنم نوكتت ايئاقلت depletion region
يلاتلا لكشلا رظنا
13
When a p-n junction is formed, a depletion region occurs.
لاؤس : ةقطنم يه ام depletion region
؟
باوج :
يف ءاقتللاا ةقطنم يه p-n junction
تانحش لمحتو ايعيبط ثدحتو لكشلا رظنا ةبلاسو ةبجوم ions
يلاتلا
14
A region in a semiconductor device at the juncture of P-type and N-type materials, in which there is neither an excess of electrons nor of holes.
لاؤس : ةقطنم ثودح ببس وه ام depletion region
؟
باوج :
نم ةرحلا تانورتكللاا كرحت وه اهثودح ببس n-type
عم دحتتل holes
يف ةدوجوملا p-type
ةثدحم
تانحش ةقطنم يف ions
depletion region يلاتلا لكشلا رظنا
15
When a p-n junction is formed, some of the free electrons in the n-region diffuse across the junction and combine with holes to form negative ions. In so doing they leave behind positive ions at the donor impurity sites.
P-N Junction Diode
لاؤس : وه ام زاهجل يلخادلا بيكرتلا
Diode
؟
باوج :
زاهجل يلخادلا بيكرتلا Diode
نع ةرابع وه p-n junction
يلاتلا لكشلا رظنا
17
The semiconductor diode is a p-n junction.
لاؤس : زاهج فارطا ىمست اذام Diode
؟
باوج :
ىمست anode
cathode و يلاتلا لكشلا رظنا
18
Anode and cathode diode terminals.
لاؤس : زاهج لخاد ثدحي اذام Diode
؟ ءابرهكلاب هليصوت مدع نيح
باوج :
يلاتلا لكشلا رظنا رايت يا هب رمي لاو ءيش ثدحيلا
19
When the applied voltage is 0 V (no bias), then the resulting current is 0 A, much like an isolated resistor.
لاؤس : زاهج لخاد ثدحي اذام Diode
عضو يف نوكي امنيح Reverse-Bias
؟
باوج :
ةقطنم ضرع دادزي depletion region
رظنا رايتلا رورم عنمت يتلاو يلاتلا لكشلا
20 If an external potential of V volts is
applied across the p–n junction such that the positive terminal is connected to the n-type material and the negative terminal is connected to the p-type material as shown in Fig. 1.13 , the number of
uncovered positive ions in the depletion region of the n-type material will increase due to the large number of free electrons drawn to the positive potential of the applied voltage. For similar reasons, the number of uncovered negative ions will increase in the p-type material. The net effect, therefore, is a widening of the depletion region. This widening of the depletion region will establish too great a barrier for the majority carriers to
overcome, effectively reducing the
majority carrier flow to zero, as shown in Fig. 1.13a .
لاؤس : زاهج لخاد ثدحي اذام Diode
عضو يف نوكي امنيح Forward-Bias
؟
باوج :
ةقطنم شمكنت depletion region
للاخ رايتلا رميو diode
رظنا لكشلا يلاتلا
21 As the applied bias increases in magnitude, the depletion region will continue to decrease in width until a flood of electrons can pass through the junction, resulting in an exponential rise in current as shown in the forward- bias region of the characteristics of Fig. 1.15 . Note that the vertical scale of Fig. 1.15 is measured in milli-
amperes (although some semiconductor diodes have a vertical scale measured in amperes), and the horizontal scale in the forward-bias region has a maximum of 1 V.
