Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy
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The relatively high energy of the emission peak from In-rich InGaN SQW with the In composition of ⬃70% can be attributed to the thin well width 共⬃1 nm兲 and the compositional grading due
A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer Abstract This paper presents a comparative analysis of the
port at the anode/organic interface due to the increase of the free hole concentration in HTL via charge transfer reactions 共Fig.1兲.3,5 However, it is noted that although the hole-only
Thus we further investigated the effect of different grading profile, such as linear, parabolic, and Fermi-function numerically, on the carrier distribution and radiative recombination
Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer Li Chen1,2#, Yijun Dai1,2#, Liang Li1,2,
©2008 American Institute of Physics.关DOI:10.1063/1.2979706兴 Stacked共tandem兲organic light-emitting diodes共OLEDs兲 are attractive for next-generation displays and solid-state lightings
