High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
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By applying (5), the outcome shows that using dual-layer remote phosphor structure can create a much better luminous flux than using single-layer phosphor structure..
The broad excitation spectra found at 254nm and the emission spectra found all visible regions 400-650nm which indicate that prepared sample used as WLED application which was
The 293 normal red InGaN LEDs with large chip sizes hollow dots, 294 absolute output power in the integrating sphere and red 295 AlInGaP µLEDs with similar chip sizes on-wafer
White White- -light sources based on light sources based on LEDs LEDs Euijoon Yoon Euijoon Yoon Generation of white light with LEDs Generation of white light with LEDs • Perception
LED / Euijoon Yoon 4 The location of the black The location of the black- - body radiation in the chromaticity diagram body radiation in the chromaticity diagram • Planckian locus –
LED / Euijoon Yoon 3 The van Roosbroeck The van Roosbroeck- -Shockley Model Shockley Model αν absorption coefficient [cm-1] αν-1 mean distance that a photon travels before being
High Internal Efficiency Designs High Internal Efficiency Designs Euijoon Yoon Euijoon Yoon Double heterostructures Double heterostructures • •Confinement of carriers in active
LED / Euijoon Yoon 17 Constant Constant- -current and constant current and constant- -voltage DC drive circuits voltage DC drive circuits ••The temperature dependence of LED
