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Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide.

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Fig. 2. Microstructures of RB-SiC observed by TEM.
Table 3.
Table 3
Fig. 6. Machined surface at stray C but different levels of voltage with carbon nanofibres addition: (a) 60 V (b) 80 V (c) 100 V (d) 110 V.
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Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide.

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