Intel
Intel
’
’
s Memory
s Memory
Strategy for the
Strategy for the
Wireless Phone
Wireless Phone
Stefan Lai
Stefan Lai
VP and Co
VP and Co
-
-
Director, CTM
Director, CTM
Intel Corporation
Intel Corporation
Nikkei
Nikkei
Microdevices
Microdevices
Memory Symposium
Memory Symposium
January 26
Agenda
Agenda
y
y
Evolution of Memory Requirements
Evolution of Memory Requirements
y
y
Evolution of the Memory Subsystem
Evolution of the Memory Subsystem
y
y
Evolving Role of Storage
Evolving Role of Storage
y
y
y
Evolution of Memory Requirements
Evolution of Memory Requirements
y
y
Evolution of the Memory Subsystem
Evolution of the Memory Subsystem
y
y
Evolving Role of Storage
Evolving Role of Storage
y
WW Adoption of New Handset Features
WW Adoption of New Handset Features
Mainstream Adoption Differs Worldwide
Mainstream Adoption Differs Worldwide
--
Handset needs diverge as segmentation increases
Handset needs diverge as segmentation increases
--
Features driving RAM, code & data density increase
Features driving RAM, code & data density increase
--
Data needs highly variable, driving growth of card sockets
Data needs highly variable, driving growth of card sockets
0% 25% 50% 75% 100%
Packet Data: +18 Mb
Packet Data: +18 Mb
Color: +46 Mb
Color: +46 Mb
Camera: +202 Mb
Camera: +202 Mb
3G: +402 Mb
3G: +402 Mb
2000 2001 2002 2003 2004 2005
Source: NPD/
Today
Today
’
’
s Memory Subsystem Needs
s Memory Subsystem Needs
y
ySRAMSRAM
y
yPSRAM PSRAM
y
yLPS/DDR DRAMLPS/DDR DRAM
y
y<100 ns bit alterations<100 ns bit alterations
y
y<500 <500 µµA retention powerA retention power
y
y≥≥101088write cycleswrite cycles
y
ySmall Form Factor HDDSmall Form Factor HDD
y
yNANDNAND
y
yMLC NORMLC NOR
y
yLow costLow cost
y
y0.5 to 2 MB/s write0.5 to 2 MB/s write
y
y≥≥101055erase cycleserase cycles
Technologies
Technologies
’
’
05 Requirements
05 Requirements
Memory Function
Working
Working
User
User
Static
Static
System
System
Execution
Execution
RAM
RAM
Code
Code
Data
Data
yyMLC NORMLC NOR
y
ySBC NORSBC NOR
y
yLPS/DDR DRAM + LPS/DDR DRAM +
storage
storage
y
y≤≤104 MHz random read104 MHz random read
y
yVery low retention powerVery low retention power
y
Needs Vary Greatly by Handset Segments
Needs Vary Greatly by Handset Segments
Hardware BO
M
Low
312 mu handsets
High
68 mu handsets
Mid
281 mu handsets
Functionality
Execution Memory
Execution Memory
16 to 64 Mb
16 to 64 Mb
System & User Data
System & User Data
2 to 32 Mb
2 to 32 Mb
Working Memory
Working Memory
64 to 128 Mb
64 to 128 Mb
Execution Memory
Execution Memory
64 to 256 Mb
64 to 256 Mb
System & User Data
System & User Data
64 to 128 Mb
64 to 128 Mb
Working Memory
Working Memory
128 to 512 Mb
128 to 512 Mb
Execution Memory
Execution Memory
256 to 512 Mb
256 to 512 Mb
System & User Data
System & User Data
256 to 512+ Mb
256 to 512+ Mb
High End
High End
y
y
Evolution of Memory Requirements
Evolution of Memory Requirements
y
y
Evolution of the Memory Subsystem
Evolution of the Memory Subsystem
y
y
Evolving Role of Storage
Evolving Role of Storage
y
Memory Hierarchy & Trends:
Memory Hierarchy & Trends:
Evolution of the Subsystem
Evolution of the Subsystem
y
y
Integrated memory for Cache &
Integrated memory for Cache &
Buffers on the rise
Buffers on the rise
–
–
Emergence of 2nd Level Cache
Emergence of 2nd Level Cache
in Wireless CPUs
in Wireless CPUs
y
y
Large integrated memory appears
Large integrated memory appears
in mainstream chipsets
in mainstream chipsets
–
–
Size of embedded volatile
Size of embedded volatile
memory remains limiting factor
memory remains limiting factor
y
y
System in Package use growing
System in Package use growing
–
–
New technologies enable size,
New technologies enable size,
power, & performance gains
power, & performance gains
–
–
Flexibility & scalability are key
Flexibility & scalability are key
Increasing Latency,
Decreasing Cost/Bit
Increasing Latency,
Decreasing Cost/Bit
BB/App
CPU BuffersBuffers
2
2ndndLevel CacheLevel Cache
1
1ststLevel CacheLevel Cache
Main
Main
Memory
Memory NVM NVM
Memory Architecture Approaches
Memory Architecture Approaches
•
•
Lowest RAM density required
Lowest RAM density required
•
•
Lowest standby power
Lowest standby power
•
•
Minimum chip count, weight,
Minimum chip count, weight,
space
space
“Execute in Place” (XIP) Memory
“Store and Download” (SnD) Memory
Baseband R F DSP ARM* NVM RAM DSP Peripherals ARM* Peripherals Memory /B us Controller I$ I$ D$ RAM Code Data Flash RAM Working
Data flow in a I cache miss
Baseband R F DSP ARM* NVM RAM DSP Peripherals ARM* Peripherals Memory /B us Controller I$ I$ D$ RAM Data & Files NV Stora g e RAM Working Static
Data flow in a I cache miss
Shadow C o d e co p ie d a n d f ixed in p lace a t b o o t Working Static •
• Extra RAM density required or reduced Extra RAM density required or reduced
performance with demand paging
performance with demand paging
•
• Higher standby powerHigher standby power
•
• Higher software complexityHigher software complexity
•
• Single bus bottleneckSingle bus bottleneck
XIP Memory Shipping in 95% of Handsets
Subsystem Architecture Comparison
Subsystem Architecture Comparison
+
+
Low System Complexity
Low System Complexity
Code and Data Integrity, Simple Software
Code and Data Integrity, Simple Software
+
+
Low Power (Energy)
Low Power (Energy)
Code Execution Power in System Standby
Code Execution Power in System Standby
--
/=
/=
Fast File System Performance
Fast File System Performance
File Write, Database, Multimedia file
File Write, Database, Multimedia file
+
+
Fast Code Performance
Fast Code Performance
Multimedia, Java, Paging Impacts, Boot
Multimedia, Java, Paging Impacts, Boot
=
=
Low Cost
Low Cost
Bill of Materials, Max User Available RAM
Bill of Materials, Max User Available RAM
XIP over
XIP over
SnD
SnD
Values
Next Steps: Extending the Benefits of an XIP
Next Steps: Extending the Benefits of an XIP
-
-based Memory Subsystem
based Memory Subsystem
y
y
Deliver the best XIP performance & data
Deliver the best XIP performance & data
storage performance
storage performance
–
–
Higher performance XIP
Higher performance XIP
–
–
Increased bus frequency, Flash DDR
Increased bus frequency, Flash DDR
–
–
Pipelined interface
Pipelined interface
–
–
Increased write speeds > 4 Megabits/sec
Increased write speeds > 4 Megabits/sec
–
–
Optimized total subsystem solutions
Optimized total subsystem solutions
y
y
Developing an array of solutions to make
Developing an array of solutions to make
mobile systems more secure
SnD
SnD
Enables Unauthorized Entry Points
Enables Unauthorized Entry Points
Most viruses overwrite RAM in an unauthorized manner
Most viruses overwrite RAM in an unauthorized manner
Code executed directly from NOR Flash Code executed from RAM
XIP
SnD
Baseband R F DSP ARM* NVM RAM DSP Peripherals ARM* Peripherals Memory /B us Controller I$ I$ D$ RAM Code Data Flash LP SDRAM (Optio na l) WorkingWorking Static Baseband R F DSP ARM* NVM RAM DSP Peripherals ARM* Peripherals Memory /B us Controller I$ I$ D$ RAM Boot/ Comm Data & Files DI SK LP SDRAM Working Static Shadow Sh ado w e d /p ag ed cod e in v u lner ab le to modific a ti ons NORXIP foundation eliminates opportunity of
XIP foundation eliminates opportunity of
intercept while writing to RAM
intercept while writing to RAM
Code Storage Memory = Execution Memory
Optimal Wireless Memory System
Optimal Wireless Memory System
LPSDRAM
LPSDRAM
PSRAM
PSRAM
SRAM
SRAM
Data Flash
Data Flash
Code NOR
Code NOR
Flexibility to Meet Different Phone Price Points
Flexibility to Meet Different Phone Price Points
SRAM/PSRAMSRAM/PSRAM
PSRAM/LPSDRAM
PSRAM/LPSDRAM
LPSDRAM
LPSDRAM
Intel
Intel StrataFlashStrataFlash®® Wireless Memory
Wireless Memory
Data Flash
Data Flash
Card Slot
Card Slot
Card Slot
Card Slot
Intel
Intel StrataFlashStrataFlash®® Wireless Memory
Wireless Memory
Scalable from Low to High
Scalable from Low to High
Intel
Intel StrataFlashStrataFlash®® Wireless Memory
y
y
Evolution of Memory Requirements
Evolution of Memory Requirements
y
y
Evolution of the Memory Subsystem
Evolution of the Memory Subsystem
y
y
Evolving Role of Storage
Evolving Role of Storage
y
’
’
08 Consumer Mobile Mass Storage
08 Consumer Mobile Mass Storage
Target Density
Storage
Price Point
1 GB
0.1 GB
10 GB
100 GB
$1
$10
$100
Notebook PC
Notebook PC
MLC NOR/NAND
MLC NOR/NAND
≤
≤
1.0
1.0
”
”
HDD
HDD
1.8
1.8
”
”
HDD
HDD
Volume Handset
Volume Handset
High End MP3
High End MP3
Cards
Cards
HH Video Game
HH Video Game
Digital Camcorder
Digital Camcorder
Usage of SFF HDD in Handheld Systems
Usage of SFF HDD in Handheld Systems
y
y
Power, vibration & environment inherent issues with rotating
Power, vibration & environment inherent issues with rotating
media
media
y
y
Successful implementations focus on media storage
Successful implementations focus on media storage
–
–
Large media files (MP3, MPEG4) are buffered into RAM and
Large media files (MP3, MPEG4) are buffered into RAM and
HDD shut down
HDD shut down
–
–
XIP code & system data in MLC NOR complements large
XIP code & system data in MLC NOR complements large
media storage in SFF
HDD in Handset Implementation
HDD in Handset Implementation
Solutions Scale High to Low
Solutions Scale High to Low
1T RAM
1T RAM
LP DRAM
LP DRAM
MLC NOR
MLC NOR
Data
Data
Flash
Flash
Card Slot
Card Slot
Card Slot
Card Slot
MLC
MLC
NOR
NOR
LP DRAM
LP DRAM
MLC NOR
MLC NOR
SFF HDD
SFF HDD
1T/6T RAM
1T/6T RAM
MLC NOR
MLC NOR
Code + Key Data: OS,
Driver, Applications plus
Key System Data and
Databases
Media Data: Large file
data such as MPEG4
video, MP3 songs
RAM: Working system
memory & media data
buffered from HDD
HDD and MLC NOR Complementary
HDD and MLC NOR Complementary
Solutions in Media
CE
CE
-
-
ATA Industry Workgroup
ATA Industry Workgroup
y
y
Consortium focused on defining a standard interface for storage
Consortium focused on defining a standard interface for storage
devices
devices
optimized for handheld and consumer electronics applications
optimized for handheld and consumer electronics applications
y
y
Led by major industry
Led by major industry
-
-
leading consumer electronics, storage and
leading consumer electronics, storage and
semiconductor companies
semiconductor companies
–
–
Promoter Companies include Hitachi, Intel, Marvell, Nokia, Seaga
Promoter Companies include Hitachi, Intel, Marvell, Nokia, Seaga
te and
te and
Toshiba
Toshiba
y
y
y
Evolution of Memory Requirements
Evolution of Memory Requirements
y
y
Evolution of the Memory Subsystem
Evolution of the Memory Subsystem
y
y
Evolving Role of Storage
Evolving Role of Storage
y
y
y
Visibility for scaling of
Visibility for scaling of
floating gate clear to 32 nm
floating gate clear to 32 nm
y
y
Forms high
Forms high
“
“
hurdle
hurdle
”
”
for
for
new technologies to leap
new technologies to leap
1986/1.5
1986/1.5
µ
µ
m
m
1988/1.0
1988/1.0
µ
µ
m
m
1991/0.8
1991/0.8
µ
µ
m
m
1993/0.6
1993/0.6
µ
µ
m
m
1996/0.4
1996/0.4
µ
µ
m
m
1998/0.25
1998/0.25
µ
µ
m
m
2000/0.18
2000/0.18
µ
µ
m
m
2002/0.13
2002/0.13
µ
µ
m
m
2004/90n
2004/90n
m
m
“
“
Moore
Moore
’
’
s Law
s Law
”
”
Continues with FG NVM
Continues with FG NVM
2006/65n
2006/65n
m
m
2008/45n
2008/45n
m
m
90 nm cell is 1/476
90 nm cell is 1/476
ththof
of
1.5
Near
Near
-
-
term Candidates for Alternative
term Candidates for Alternative
Memory
Memory
y
y
Three leading
Three leading
alternative memories
alternative memories
–
–
Potential for
Potential for
mainstream adoption
mainstream adoption
within 3 to 5 years
within 3 to 5 years
–
–
All are nonvolatile
All are nonvolatile
execution
execution
memories
memories
y
y
But, no credible
But, no credible
technology challenger
technology challenger
to Flash through 2010
Attribute Fit to Requirements
Attribute Fit to Requirements
Applied Electric Field Moves Center Atom
Data Storage Region Amorphous Chalcogenide Hea ter Poly Crystalline
OUM
OUM
MRAM
MRAM
FeRAM
FeRAM
y
y
Execution
Execution
y
y
System storage
System storage
y
y
Embedded
Embedded
y
y
Cell
Cell
≅
≅
1.5 to 20 F
1.5 to 20 F
²
²
y
y
Fast read /
Fast read /
medium
medium
write
write
y
y
Unlimited read, 10
Unlimited read, 10
1212y
y
High performance
High performance
working memory
working memory
y
y
Execution & RAM
Execution & RAM
y
y
Cell
Cell
≅
≅
16 –
16
–
40 F²
40 F
²
y
y
Fastest read/write
Fastest read/write
y
y
Unlimited R/W cycles
Unlimited R/W cycles
y
y
Low density
Low density
storage &
storage &
execution
execution
y
y
Embedded
Embedded
y
y
Cell
Cell
≅
≅
12
12
-
-
25 F
25 F
²
²
y
y
Fast read/write
Fast read/write
y
y
<10
<10
99read cycles
read cycles
Application Fit
Application Fit
Key Attributes
Evolution of Future Handset Storage
Evolution of Future Handset Storage
y
y
Floating Gate and SFF
Floating Gate and SFF
HDDs
HDDs
have clear scaling path
have clear scaling path
y
y
Other new alternatives are longer term for mainstream
Other new alternatives are longer term for mainstream
adoption (>3 to 5 years)
adoption (>3 to 5 years)
y
y
Promise new attributes @ new price points
Promise new attributes @ new price points
FG Memory
FG Memory
“
“
Seek and Scan
Seek and Scan
”
”
MEMS
MEMS
Cost of 1
Cost of 1
st
st
MB
MB
Multi
Multi
-
-
Layer Memory
Layer Memory
Vision for Future
Vision for Future
Memory Subsystem Evolution
Memory Subsystem Evolution
1T RAM 1T RAM LP DRAM LP DRAM MLC NOR MLC NOR Data Data Flash Flash Card Slot Card Slot Card Slot Card Slot MLC MLC NOR NOR
Solutions Scale High to Low
Solutions Scale High to Low
1T/6T RAM
1T/6T RAM
MLC NOR
MLC NOR
2005
2005
Next
Next
1T RAM 1T RAM LP DRAM LP DRAM MLC NOR MLC NOR Data Data Flash Flash Card Slot Card Slot Card Slot Card Slot MLC MLC NOR NOR LP DRAM LP DRAM MLC NOR MLC NOR SFF HDD SFF HDD 1T/6T RAM 1T/6T RAM MLC NOR MLC NOR
Faster 4+ Mb/sec
Faster 4+ Mb/sec
write
write
Enhanced security
Enhanced security
solutions
solutions
High performance
High performance
XIP DDR Flash
Future Technology Vision
Future Technology Vision
xRAM xRAM Card Slot Card Slot Card Slot Card Slot OUM OUM xRAM xRAM OUM OUM MEMS? MEMS? MLM? MLM? Integrated Integrated OUM OUM
Solutions Must Scale High to Low
Solutions Must Scale High to Low
Summary & Conclusions
Summary & Conclusions
y
y
XIP MLC NOR is at the core of the best
XIP MLC NOR is at the core of the best
wireless memory subsystems
wireless memory subsystems
–
–
Best solution scales across the wide range
Best solution scales across the wide range
of needs
of needs
y
y
Intel extending memory solution with
Intel extending memory solution with
higher performance, increased security
higher performance, increased security
y
y
SFF HDD complements XIP NOR in
SFF HDD complements XIP NOR in
media
media
-
-
intensive applications
intensive applications
y
y
Phase change memory best candidate
Phase change memory best candidate
for near