SiO 2 GROWTH KINETICS ON SiC
6.3 Results and Discussion
6.3.1 Kinetics of the nitrogen uptake
ment steps, the low intensity UV lamp was kept on when performing Fowler-Nordheim hole injection experiments, but the high intensity UV beam was blocked by a shutter when performing photoemission of electrons. A custom LabVIEW program was implemented to control the units and process the data.
Spin resonance
For spin resonance measurements, oxides on the (000-1) C-face of 6H-SiC and the (001) face of Si were grown in the conditions described above. Some of them were then annealed for 2 hours in NO at 1175 ◦C, yielding an SiO2 thickness of about 275 nm and 425 nm on SiC and Si respectively. In order to charge the defects, the samples were irradiated with 5 to 10 Mrad (SiO2) using the 10 keV X-ray source. X-band ESR measurements were made at 30 K. The g-value, characteristic of the ESR signal, was calculated from the applied field at resonance.14
Figure 6.2: SIMS profiles for the samples annealed in NO for 7.5 min, 30 min and 120 min.
techniques like NH3 annealing and plasma nitridation, incorporate nitrogen throughout the SiO2, which reveals that the kinetics of NO and N2O anneals are peculiar.17,18,19In addition, for NO and N2O, the incorporation rates scale with the oxidation rates when comparing nitrogen uptake on the Si-face, a-face, C-face of SiC, and on silicon.20 All this suggests that the nitrogen uptake results from the dissociation of NO at the oxide/semiconductor interface during NO and N2O anneals.
Also, the width of the SIMS nitrogen peaks calculated at half maximum (FWHM) is constant for all measured annealing times. It implies that the extent of the region in which nitrogen is incorporated remains the same. Note that the extracted values of 3 nm is limited by the technique as there are several processes impacting SIMS depth resolution: collision cascades cause intermixing of the ions at the interface and artificial profile broadening, the stress and the density at the interface can affect the sputtering rate of the primary beam, the ionization yield can change in that region... In fact, it has been shown from electron energy-loss spectroscopy (EELS) that the nitrogen is located within at most 1.2 nm of the SiO2/SiC interface, the resolution limit of the technique.20,21 The localized dissociation of NO, the passivation of defects, and/or the release of interfacial stress could explain the accumulation of nitrogen in that region only.
Figure 6.3: N area density as a function of NO annealing time calculated by integrating the SIMS N signal. The curve is the fit by Eq.(6.3), the resulting values of the parameters are listed.
In order to study the evolution of the nitrogen incorporation rate, the N area densityη (in atoms/cm2) was extracted as a function of the NO annealing timet (in minutes) from the SIMS data (Figure6.3). The values were obtained by subtracting the background noise at detection limit (1018cm−3 seen in the sampleNO 0) prior to integrating the N signal.
In previous experiments, the error on the absolute values of the area density deduced from SIMS was estimated to be around 20% by a cross-calibration with nuclear reaction analysis (NRA).22 However, the relative error for each point, i.e. the reproducibility, is of the order of 5%.
The data is analyzed by a first-order rate equation which is obtained in part by assuming that a densityη0of binding sites is available for nitrogen at the interface att= 0 and that the change in N area density per unit time is proportional to a binding rate 1/θb (in cm3/min), to the NO concentration CN O in the oxide (in molecules/cm3),a and to the the number of sites left unoccupied at timet;
dη
dt = η0−η
θb CN O (6.1)
a
However, it is believed that the process is not that straightforward. In particular, it has been shown that the nitrogen incorporated at the SiO2/SiC interface via NO and N2O anneals is not stable against re-oxidation,15 i.e. it is removed in the presence of O2. This affects the kinetics of the nitrogen uptake because there is always a source of oxygen during NO and N2O exposure at high temperature.22 For flowing anneals at 1175◦C, the remaining molar fraction of NO is about 50% as it partially decomposes into N2 (25%) and O2 (25%).
Therefore, in addition to the atomic oxygen resulting from the dissociation of the NO molecules at the interface, there is molecular oxygen in the system. This explains the slow re-oxidation taking place in parallel with the nitrogen incorporation. It also implies that the N saturation value comes in part from a balance between incorporation and removal.
In the case of N2O, the re-oxidation rate is even faster because it decomposes quickly into NO (10%), N2 (60%), and O2 (30%). Accordingly, the molar ratio of O2 to NO is 0.5 and 3 during NO and N2O annealing respectively. Because of the faster re-oxidation rate in the latter case, an order of magnitude less N is incorporated.16
A kinetic model assuming the total nitridation rate (dη/dt) to be proportional to the NO concentration and inversely proportional to the O2 concentration has been previously derived.20 However, it did not consider saturation of the binding sites as in Eq.(6.1). If one assumes that N removal is primarily due to the molecular oxygen,b and that processes such as the formation of a diffusion barrier are not dominant,
dη
dt = η0−η
θb CN O− η
θrCO2 (6.2)
where θr is the N removal rate and CO2 is the concentration of molecular oxygen. The general solution of Eq.(6.2) is of the form
η[t] = A(1−e−t/τb) +C (6.3)
bNote that if removal from the atomic oxygen is considered, an additional term needs to be added to Eq.(6.2). The equation will keep the same form and have a similar solution.
where C is an offset constant, A is the saturation area density and 1/τb is an effective characteristic rate (in min−1). From Eq.(6.2), A and τb are defined by
A = η0 1 1 + CCO2
NO
θb θr
(6.4)
τb = 1
CNO θb +CθO2
r
(6.5) Note that Eqs. (6.2), (6.4) and (6.5), could be simplified by assuming a proportionality factor between the oxygen and the nitric oxide concentration.
The fit of the data by Eq.(6.3) fort >0, shown in Figure6.3, yields values for the char- acteristic rate andC that are about 2.6×10−2 min−1 and 0.5×1014 cm−2 respectively. The offset (C) could be explained by the errors in the absolute values of η[t >0]. The nitrogen saturation density is estimated at approximately 5.75×1014 cm−2, in good agreement with previously published values.16,22,23,24
It should be noted that although Eq.(6.3) can model the evolution of the nitrogen concentration in the present case, it does not predict the decrease of η which has been observed, is some cases, for longer annealing times.20,22 In fact, the amount of binding sites available is likely to be of the form
η0 =
i
η0i (6.6)
whereη0iare the contributions from sites of different nature: interface defects, bulk defects, strained SiO2... During the slow re-oxidation taking place while introducing nitrogen, it is possible that some properties of the oxide and of the interface will change, implying thatη0 is not a constant but a function of time as well. So it could be that the equilibrium value of η0 during nitridation is lower than the one at t= 0.