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Foundations of VHF, UHF and Microwave NEMS Resonators

2.2 Experimental Foundation

2.2.4 Resonance Detection and Electronic Readout

Two-port network analysis is probably the most canonical and also convenient approach to perform RF detection and measurements of a NEMS resonance. Fig. 2.13 demonstrates the most important three schemes of two-port network analyses for NEMS resonators. All these schemes have hitherto been implemented in real measurements.

The efficiency of each is limited by interplay between the resonance’s electromechanical impedance and the response due to the impedance mismatch and parasitic effects.

The transmission scheme in Fig. 2.13(a) has been directly used for HF and up to

~200MHz resonators with close to 50Ω impedance, and used with shunt 50Ω resistance to decrease the impedance mismatch for devices having large DC resistances (from

>100Ω to well in the kΩ range) such as nanowires [30]. The reflection scheme shown in Fig. 2.13(b) has been more often applied to HF/VHF resonators [23,28,29], mostly by employing a directional coupler in lieu of the circulator shown.

Fig. 2.13 Electronic readout schemes and measurements diagrams. (a) Two-port transmission measurement scheme with single device. (b) Two-port reflection measurement with single device.

(c) Two-port balanced-bridge measurement with a pair of devices.

Both the transmission and reflection schemes quickly lose their efficiency when the device frequency approaches the UHF range and the device electromechanical impedance

becomes even smaller, as compared to the effect of any commonly existing parasitics.

As shown in Fig. 2.13(c), a prototype of the balanced-bridge scheme [31] was developed to evade this issue to some extent. This scheme involves a pair of devices with very close DC resistances, and has been proven to have better efficiency than both the transmission and reflection schemes in detecting UHF NEMS resonances. However, this scheme and its underlying theory only take care of the effects of the DC resistance mismatch and its better efficiency has only been manifested with VHF devices. It still suffers from only obtaining very small resonance signals when implemented in the UHF range. Later we made improvements, or the second generation of the bridge scheme [25], but this progress was unsubstantial and did not completely solve the problem. Our latest but significant improvements for large signal readout from a typical UHF NEMS resonance was catalyzed and squeezed out in our desperate development of the NEMS oscillator technology. The analyses and implementation of this third generation bridge scheme is presented in Chapter 3.

Bibliography

[1] S. Timoshenko, D.H. Young, W. Weaver Jr, Vibration Problems in Engineering, New York:

Wiley (1974).

[2] D.A. Harrington, M.L. Roukes, “Electrical tuning of the frequency, nonlinearity, and dissipation factor of NEMS resonators”, Caltech Technical Report CMP-106, Rev. 12 (1994).

[3] A.N. Cleland, Foundations of Nanomechanics: From Solid-State Theory to Device Applications, Berlin: Springer (2002).

[4] G.E. Uhlenbeck, L.S. Omstein, “On the theory of the Brownian motion”, Phys. Rev. 36, 823-841 (1930).

[5] F. Reif, Fundamentals of Statistical and Thermal Physics, New York: McGraw-Hill (1965).

[6] W.P. Robins, Phase Noise in Signal Sources, London: Peter Peregrinus Ltd. & IEE (1984).

[7] J.A. Barnes, A.R. Chi, L.S. Cutler, et al., “Characterization of frequency stability”, IEEE Trans.

Instru. & Meas. IM-20, 105-120 (1971).

[8] J. Rutman, F.L. Walls, “Characterization of frequency stability in precision frequency sources”, Proc. IEEE 79, 952-960 (1991).

[9] D.W. Allan, “Time and frequency (time-domain) characterization, estimation, and prediction of precision clocks and oscillators”, IEEE Trans. Ultrason. Ferr. & Freq. Contr. UFFC-34, 647-654 (1987).

[10] J.R. Vig, F.L. Walls, “Fundamental limits on the frequency instabilities of quartz crystal oscillators”, Proc. IEEE 48th Int. Freq. Contr. Symp. 506-523 (1994); or, F.L. Walls, J.R. Vig, ibid, IEEE Trans. Ultrason. Ferr. & Freq. Contr. 42, 576-589 (1995).

[11] T.B. Gabrielson, “Mechanical-thermal noise in micromachined acoustic and vibration sensors”, IEEE Trans. Electron Devices 40, 903-909 (1993).

[12] Y.K. Yong, J.R. Vig, “Resonator surface contamination—a cause of frequency fluctuations”, IEEE Trans. Ultrason. Ferr. & Freq. Contr. 36, 452-458 (1989).

[13] Y.K. Yong, J.R. Vig, “Modeling resonator frequency fluctuations induced by adsorbing and desorbing surface molecules”, IEEE Trans. Ultrason. Ferr. & Freq. Contr. 37, 543-550 (1990).

[14] J.R. Vig, Y. Kim, “Noise in microelectromechanical system resonators”, IEEE Trans. Ultrason.

Ferr. & Freq. Contr. 46, 1558-1565 (1999).

[15] A.N. Cleand, M.L. Roukes, “Noise processes in nanomechanical resonators”, J. Appl. Phys. 92, 2758-2769 (2002).

[16] Y.T. Yang, Phase Noise in Nanoelectromechanical Systems (Ph.D. Thesis, Advisor: M.L.

Roukes), California Institute of Technology (2004).

[17] A.H. Nayfeh, D.T. Mook, Nonlinear Oscillations, New York: John Wiley & Sons (1979).

[18] H.W.Ch. Postma, I. Kozinsky, A. Husain, M.L. Roukes, “Dynamic range of nanotube- and nanowire-based electromechanical systems”, Appl. Phys. Lett. 86, 223105 (2005).

[19] P. Malatkar, Nonlinear Vibrations of Cantilever Beams and Plates (Ph.D. Thesis, Advisor: A.H.

Nayfeh), Virginia Polytechnic Institute and State University (2003).

[20] K.L. Ekinci, Y.T. Yang, M.L. Roukes, “Ultimate limits to inertial mass sensing based upon nanoelectromechanical systems”, J. Appl. Phys. 95, 2682-2689 (2004).

[21] M. Mehregany, C.A. Zorman, N. Rajan, C.H. Wu, “Silicon carbide MEMS for harsh environments”, Proc. IEEE 86, 1594-1610 (1998).

[22] M. Mehregany, C.A. Zorman, S. Roy, A.J. Fleischman, C.H. Wu, N. Rajan, “Silicon carbide for microelectromechanical systems”, Int. Mat. Rev. 45, 85-108 (2000).

[23] Y.T. Yang, K.L. Ekinci, X.M.H. Huang, L.M. Schiavone, M.L. Roukes, C.A. Zorman, M.

Mehregany, “Monocrystalline silicon carbide nanoelectromechanical systems”, Appl. Phys. Lett.

78, 162-164 (2001).

[24] X.M.H. Huang, C.A. Zorman, M. Mehregany, M.L. Roukes, “Nanodevice motion at microwave frequencies”, Nature 421, 496 (2003).

[25] X.M.H. Huang, X.L. Feng, C.A. Zorman, M. Mehregany, M.L. Roukes, “VHF, UHF and microwave frequency nanomechanical resonators” (invited article), New J. Phys. 7, 247 (2005).

[26] C.A. Zorman, A.J. Fleischman, A.S. Dewa, M. Mehregan, C. Jacob, S. Nishino, P. Pirouz,

“Epitaxial growth of 3C-SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition”, J. Appl. Phys. 78, 5136-5138 (1995).

[27] X.A. Fu, C.A. Zorman, M. Mehregany, “Surface roughness control of 3C-SiC films during the epitaxial growth process”, J. Electrochem. Soc. 151, G910-G914 (2004).

[28] A.N. Cleland, M.L. Roukes, “Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals”, Appl. Phys. Lett. 69, 2653-2655 (1996).

[29] A.N. Cleland, M.L. Roukes, “External control of dissipation in a nanometer-scale radio frequency mechanical resonator”, Sensors & Actuators A 72, 256-261 (1999).

[30] A. Husain, J. Hone, H.W.Ch. Postma, X.M.H. Huang, T. Drake, M. Barbic, A. Scherer, M.L.

Roukes, “Nanowire-based very-high-frequency electromechanical resonator”, Appl. Phys. Lett. 83, 1240-1242 (2003).

[31] K.L. Ekinci, Y.T. Yang, X.M.H. Huang, M.L. Roukes, “Balanced electronic detection of displacement in nanoelectromechanical systems”, Appl. Phys. Lett. 81, 2253-2255 (2002).

Chapter 3