Conclusion - NPs on GO-85 - Synthesis and Surface Modifications of Graphene Oxide and its Deriv

SnO 2 NPs on GO-85

5.5. Conclusion

In this chapter, we discussed the successful fabrication of an interdigitated electrode (IDE) pattern on GO sheets using the UV lithography process. The channel width or minimum distance between the two electrodes is made as 10 µm, confirmed by the AFM and FESEM images. The thickness of the metal electrode is 30 nm, measured from the height profile analysis of the AFM image. The FESEM images observe the fabrication of the GO-based IDE pattern. The changes in characteristics and properties of the GO after different temperatures annealing, such as 50 ˚C, 85 C, 120 ˚C, and 230 ˚C are studied. The restoration of the graphitic structure after annealing at 230 ˚C is authenticated from the XRD and Raman spectra analysis;

the shifting of 2θ peak towards the 25.6˚ of the XRD spectra and reducing the value of ID/IG

Raman spectra. The presence of oxygen functional groups is studied using XPS and FTIR analysis; flattening of C-O peak at 286 eV after 230 C annealing of GO and removal of oxygen functional groups related peaks from 950 cm^-1 to 1480 cm^-1 in the FTIR spectra. PL and UV absorption also fortified the rich presence of oxygen functional groups in the GO-RT.

I-V measurement of the GO and different annealed GO are studied and concluded that higher the oxygen functional groups attached to GO disturbed the flow of current in the GO, which leads to behaving like an insulator. The attached oxygen functional groups can regulate the electrical properties of the GO on the GO. Three photodetectors are made by using GO-85, Ar-GO, and SO-GO. The performances of the devices are compared, such as photocurrent (Iph), response time (τrise and τdec), responsivity (R), and detectivity (D). Ar-GO photodetector performs better than the other two, showing that the surface modification using the Ar-plasma treatment improves the GO-based photodetector performance.

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Dalam dokumen Synthesis and Surface Modifications of Graphene Oxide and its Derivative Two-dimensional Materials for Various Sensing Applications (Halaman 166-171)