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Chapter 3: Bipolar Junction Transistors

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Chapter 3:

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Transistor Construction Transistor Construction

There are two types of transistors:

• pnp

• npn

The terminals are labeled:

• E - Emitter

pnp pnp

• E - Emitter

• B - Base

• C - Collector

npn

npn

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Transistor Operation Transistor Operation

With the external sources, V EE and V CC , connected as shown:

• The emitter-base junction is forward biased

• The base-collector junction is reverse biased

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Currents in a Transistor Currents in a Transistor

The collector current is comprised of two

I B I C

I E = = = = + + + +

Emitter current is the sum of the collector and base currents:

The collector current is comprised of two currents:

minority I CO

majority I C

I C = +

(5)

Common

Common--Base Configuration Base Configuration

The base is common to both input (emitter–base) and

output (collector–base) of the transistor.

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Common

Common--Base Amplifier Base Amplifier

Input Characteristics Input Characteristics

This curve shows the relationship

between of input current (I E ) to input

voltage (V BE ) for three output voltage

voltage (V BE ) for three output voltage

(V CB ) levels.

(7)

This graph demonstrates the output current (I C ) to an output voltage (V CB ) for

Common

Common--Base Amplifier Base Amplifier

Output Characteristics Output Characteristics

an output voltage (V CB ) for various levels of input

current (I E ).

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Operating Regions Operating Regions

• Active – Operating range of the amplifier.

• Cutoff – The amplifier is basically off. There is voltage, but little

current.

current.

•• Saturation – The amplifier is full on.

There is current, but little voltage.

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I E I C ≅

Approximations Approximations

Emitter and collector currents:

Base-emitter voltage:

Silicon) (for

V BE 0.7

V =

(10)

Ideally: αααα = 1

Alpha (

Alpha ( αααααααα ))

Alpha ( α α α α ) is the ratio of I C to I E :

I E I C α dc =

Ideally: αααα = 1

In reality: αααα is between 0.9 and 0.998

Alpha ( α α α α ) in the AC mode AC mode:

I E I C α

ac =

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Transistor Amplification Transistor Amplification

Voltage Gain:

V 50 kΩ

5 ma 10 mA 10

10mA 20Ω

200mV

=

=

=

=

=

=

=

=

) )(

( L R

L I V

I i I L

I E I C

R i V i I i

I E

Currents and Voltages:

250 200mV

50V =

=

=

V i

V L

A v

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Common

Common– –Emitter Configuration Emitter Configuration

The emitter is common to both input (base-emitter) and output (collector- emitter).

The input is on the base and the

output is on the collector.

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Common

Common--Emitter Characteristics Emitter Characteristics

Collector Characteristics Base Characteristics

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Common

Common--Emitter Amplifier Currents Emitter Amplifier Currents

Ideal Currents Ideal Currents

I E = I C + I B I C = α α α α I E

Actual Currents Actual Currents

I C = α α α α I E + I CBO where I CBO = minority collector current I C = α α α α I E + I CBO

When I B = 0 µ µ µA the transistor is in cutoff, but there is some minority µ current flowing called I CEO .

µA 0

− =

= I

B

CBO

CEO α

I I

1

where I CBO = minority collector current

I

CBO

is usually so small that it can be ignored, except in high

power transistors and in high temperature environments.

(15)

Beta ( Beta ( β β β β β β β β ))

In DC mode:

β β β

β represents the amplification factor of a transistor. ( β β β β is

sometimes referred to as h fe , a term used in transistor modeling calculations)

I C

β dc =

In AC mode:

I B

β dc =

constant

ac =

= ∆

V

CE

B C

I

β I

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Determining β β β β from a Graph

Beta ( Beta (β β β β β β β β))

100 µA 10

mA 1

µA) 20 µA

(30

mA) 2.2

mA β (3.2

7.5 V

AC

CE

= =

= =

=

=

=

=

= −

=

=

=

=

=

=

=

108 A 25

mA

β DC 2.7 V 7.5

CE

= =

= =

µ µ µ µ

= =

= = = = = =

= 100

=

= =

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Relationship between amplification factors β β β β and α α α α

1 β α β

+ + +

= +

=

=

= α 1

β α

− − −

= −

=

=

=

Beta ( Beta (β β β β β β β β))

Relationship Between Currents Relationship Between Currents

B C βI

I = = = = I E = = = = (β + + + + 1)I B

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Common

Common– –Collector Configuration Collector Configuration

The input is on the

base and the output is

on the emitter.

(19)

Common

Common– –Collector Configuration Collector Configuration

The characteristics are similar to those of the common-emitter

common-emitter

configuration, except the

vertical axis is I E .

(20)

V CE is at maximum and I C is at

minimum (I Cmax = I CEO ) in the cutoff region.

I C is at maximum and V CE is at

minimum (V CE max = V CEsat = V CEO ) in

Operating Limits for Each Configuration Operating Limits for Each Configuration

minimum (V CE max = V CEsat = V CEO ) in the saturation region.

The transistor operates in the active

region between saturation and cutoff.

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Power Dissipation Power Dissipation

C CB Cmax V I P = = = =

C CE Cmax V I P = = = =

Common-base:

Common-emitter:

Common-collector:

E CE

Cmax V I

P = = = =

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Transistor Specification Sheet

Transistor Specification Sheet

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Transistor Specification Sheet

Transistor Specification Sheet

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Transistor Testing Transistor Testing

•• Curve Tracer Curve Tracer

Provides a graph of the characteristic curves.

•• DMM DMM

Some DMMs measure ββββ DC or h FE .

•• Ohmmeter Ohmmeter

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Transistor Terminal Identification

Transistor Terminal Identification

Referensi

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