Chapter 3:
Transistor Construction Transistor Construction
There are two types of transistors:
• pnp
• npn
The terminals are labeled:
• E - Emitter
pnp pnp
• E - Emitter
• B - Base
• C - Collector
npn
npn
Transistor Operation Transistor Operation
With the external sources, V EE and V CC , connected as shown:
• The emitter-base junction is forward biased
• The base-collector junction is reverse biased
Currents in a Transistor Currents in a Transistor
The collector current is comprised of two
I B I C
I E = = = = + + + +
Emitter current is the sum of the collector and base currents:
The collector current is comprised of two currents:
minority I CO
majority I C
I C = +
Common
Common--Base Configuration Base Configuration
The base is common to both input (emitter–base) and
output (collector–base) of the transistor.
Common
Common--Base Amplifier Base Amplifier
Input Characteristics Input Characteristics
This curve shows the relationship
between of input current (I E ) to input
voltage (V BE ) for three output voltage
voltage (V BE ) for three output voltage
(V CB ) levels.
This graph demonstrates the output current (I C ) to an output voltage (V CB ) for
Common
Common--Base Amplifier Base Amplifier
Output Characteristics Output Characteristics
an output voltage (V CB ) for various levels of input
current (I E ).
Operating Regions Operating Regions
• Active – Operating range of the amplifier.
• Cutoff – The amplifier is basically off. There is voltage, but little
current.
current.
•• Saturation – The amplifier is full on.
There is current, but little voltage.
I E I C ≅
Approximations Approximations
Emitter and collector currents:
Base-emitter voltage:
Silicon) (for
V BE 0.7
V =
Ideally: αααα = 1
Alpha (
Alpha ( αααααααα ))
Alpha ( α α α α ) is the ratio of I C to I E :
I E I C α dc =
Ideally: αααα = 1
In reality: αααα is between 0.9 and 0.998
Alpha ( α α α α ) in the AC mode AC mode:
I E I C α
∆
∆
ac =
Transistor Amplification Transistor Amplification
Voltage Gain:
V 50 kΩ
5 ma 10 mA 10
10mA 20Ω
200mV
=
=
=
=
≅
≅
=
=
=
=
) )(
( L R
L I V
I i I L
I E I C
R i V i I i
I E
Currents and Voltages:
250 200mV
50V =
=
=
V i
V L
A v
Common
Common– –Emitter Configuration Emitter Configuration
The emitter is common to both input (base-emitter) and output (collector- emitter).
The input is on the base and the
output is on the collector.
Common
Common--Emitter Characteristics Emitter Characteristics
Collector Characteristics Base Characteristics
Common
Common--Emitter Amplifier Currents Emitter Amplifier Currents
Ideal Currents Ideal Currents
I E = I C + I B I C = α α α α I E
Actual Currents Actual Currents
I C = α α α α I E + I CBO where I CBO = minority collector current I C = α α α α I E + I CBO
When I B = 0 µ µ µA the transistor is in cutoff, but there is some minority µ current flowing called I CEO .
µA 0
− =
= I
BCBO
CEO α
I I
1
where I CBO = minority collector current
I
CBOis usually so small that it can be ignored, except in high
power transistors and in high temperature environments.
Beta ( Beta ( β β β β β β β β ))
In DC mode:
β β β
β represents the amplification factor of a transistor. ( β β β β is
sometimes referred to as h fe , a term used in transistor modeling calculations)
I C
β dc =
In AC mode:
I B
β dc =
constant
ac =
∆
= ∆
V
CEB C
I
β I
Determining β β β β from a Graph
Beta ( Beta (β β β β β β β β))
100 µA 10
mA 1
µA) 20 µA
(30
mA) 2.2
mA β (3.2
7.5 V
AC
CE
= =
= =
=
=
=
=
−
−
−
−
−
−
−
= −
=
=
=
=
=
=
=
108 A 25
mA
β DC 2.7 V 7.5
CE
= =
= =
µ µ µ µ
= =
= = = = = =
= 100
=
= =
Relationship between amplification factors β β β β and α α α α
1 β α β
+ + +
= +
=
=
= α 1
β α
− − −
= −
=
=
=
Beta ( Beta (β β β β β β β β))
Relationship Between Currents Relationship Between Currents
B C βI
I = = = = I E = = = = (β + + + + 1)I B
Common
Common– –Collector Configuration Collector Configuration
The input is on the
base and the output is
on the emitter.
Common
Common– –Collector Configuration Collector Configuration
The characteristics are similar to those of the common-emitter
common-emitter
configuration, except the
vertical axis is I E .
V CE is at maximum and I C is at
minimum (I Cmax = I CEO ) in the cutoff region.
I C is at maximum and V CE is at
minimum (V CE max = V CEsat = V CEO ) in
Operating Limits for Each Configuration Operating Limits for Each Configuration
minimum (V CE max = V CEsat = V CEO ) in the saturation region.
The transistor operates in the active
region between saturation and cutoff.
Power Dissipation Power Dissipation
C CB Cmax V I P = = = =
C CE Cmax V I P = = = =
Common-base:
Common-emitter:
Common-collector:
E CE
Cmax V I
P = = = =
Transistor Specification Sheet
Transistor Specification Sheet
Transistor Specification Sheet
Transistor Specification Sheet
Transistor Testing Transistor Testing
•• Curve Tracer Curve Tracer
Provides a graph of the characteristic curves.
•• DMM DMM
Some DMMs measure ββββ DC or h FE .
•• Ohmmeter Ohmmeter
Transistor Terminal Identification
Transistor Terminal Identification