Demands for high performance of electronic devices and novel functionalities on the device such as flexibility, stretchability, light-weight, sensing of chemicals and integration of light detection and light emission are gradually elevated. The investigation of integration of light detecting and chemical sensing abilities in electronic human skin is a significant research that could promote the development of smart wearable electronic devices. In order to investigate the wearable electronic devices, novel electronic materials that are flexible and light-weight should be investigated as well as the mechanism behind the functionalities to be enhanced and fully exploit. An eventual goal of organic electronics is to fabricate large-area electronic devices and circuits on flexible and stretchable substrates. To achieve this target, high performance organic electronic materials and two-dimensional nanomaterials including graphene and transition metal dichalcogenide are worth to be studied and the combinatory investigations rising from the issues when those two materials put together in the electronic devices should be studied.
In this thesis, I have reported the studies on functional electronic devices for example, phototransistor, high performance field effect transistors based on graphene and organic dopants and graphene-like 2D nanomaterials. I have strived to give perceptions or practical research results for the development of soft nanoelectronic devices to widen possibilities for their practical use.
In Chapter 1, a brief introduction of the interface between 2D nanomaterials and organic electronic materials has been discussed. The methodologies of the synthesis for graphene and 2D nanomaterials in a large area was discussed as well as the electronic properties. Then, doping process and mechanism with respect to energy level were addressed. Among various doping technique, surface transfer doping has been used to dope 2D nanomaterials and organic semiconductors at the near-surface regime for nondestructive effects. In addition, organic field-effect transistors and organic phototransistors were introduced as representative applications utilizing 2D nanomaterials and organic electronic materials.
In Chapter 2, I have demonstrated monolayer graphene-based FET-type photodetectors with an ultrahigh responsivity of ~1 × 105 AW–1 and a photoconductive gain of ~3 × 106 at milliwatt optical intensities. Graphene-based photodetectors were functionalized using a 4-nm-thick photoactive ruthenium complex, which resulted in the generation of electron–hole pairs with long lifetime. The approach does not destroy the favorable electrical and optical properties of monolayer graphene, i.e., both the electron and hole mobilities further increased by functionalization with the photoactive compound, while maintaining the high optical transparency of monolayer graphene. Under illumination, the graphene-ruthenium complex hybrid phototransistors exhibited substantially enhanced electron current owing to the pronounced n-type doping effect engendered by electron transfer via MLCT from the ruthenium complex to graphene. The developed methodology opens a viable way for enhancing the photoresponsivity of graphene-based FET-type photodetectors.
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In Chapter 3, a Ru-complex 1-modified BPE-PTCDI phototransistor was fabricated by simple drop- casting of the transition metal complex. The resultant phototransistor exhibited a high photoresponsivity of ca. 3725 and 7230 AW1 under an incident light intensity of 1.5 μWcm2 at VGS= 10 and 80 V, respectively. Under illumination, the electrons were populated to the MLCT excited state from the ground state of Ru-complex 1 and were continually injected into the channel of the n-type BPE-PTCDI, which made the phototransistor highly photoresponsive. The EQE values of the Ru-complex 1-modified BPE-PTCDI device were ca. 50000- and 3500-times higher than those of pristine BPE-PTCDI at VGS = 20 and 80 V, respectively. This behavior stemmed from the long lifetime of electron-hole pairs (Ru3+ – e–). The phototransistor had a high detectivity of 1.9 × 1013 Jones. Furthermore, functionalization of Ru-complex 1 on the BPE-PTCDI phototransistor array is feasible for the fabrication of large-area (10
× 10 phototransistor components), transparent optoelectronic devices with high flexibility and twistability.
In Chapter 4, I have fabricated ambipolar OFET arrays with well-balanced hole and electron mobilities via conventional photolithography using a chemically robust organic semiconductor PTDPPSe-SiC4 and graphene electrodes. To the best of my knowledge, this is the first demonstration of fabrication of ambipolar OFET arrays with graphene electrodes using conventional photolithography to pattern a solution-processable organic semiconductor in a BGBC configuration on a flexible substrate.
Owing to the high insolubility of PTDPPSe-SiC4, the organic semiconductor could be directly patterned by conventional photolithography. Graphene electrode devices showed higher carrier mobilities for both p-channel (1.43 cm2 V-1 s-1) and n-channel operations (0.37 cm2 V-1 s-1), compared to p-channel (0.54 cm2 V-1 s-1) and n-channel mobilities (0.009 cm2 V-1 s-1) of Cr/Au based devices on OTS-treated SiO2/n++Si wafer. Because of the lower energetic barriers and favorable intermolecular interactions between graphene and PTDPPSe-SiC4, the contact resistance of the graphene device was much lower than that of the Cr/Au device. The PTDPPSe-SiC4 OFETs operated normally after soaking in various solvents, and proved the chemical robustness of PTDPPSe-SiC4. As a further application, PTDPPSe-SiC4 OFETs were used as a sensor platform for detecting acetone vapors.
In Chapter 5, a solution-processable organic n-type dopant was synthesized via a simple chemical reaction using PyB as an organic cation dye and NaBH4 as a reducing agent. The synthesized organic cationic dye, rPyB, was applied to graphene FETs and OFETs with the N2200 polymeric n-type semiconductor. The rPyB dopant is highly effective to graphene due to the infinite conjugated system.
Raman spectroscopy, KPFM and UPS confirmed that surface transfer rPyB doping on graphene and N2200 could be used to tune the WF of graphene and the charge transport of N2200 in the transistors.
The electron mobility of graphene FETs with 4 times coating of rPyB were maintained up to 97.8 % for 90 days, resulting rPyB are highly stable. Finally, 16 × 16 graphene FET array was rPyB-doped using PDMS stamp. By touch the center of the PDMS stamp with a fingertip, only center area of 16 × 16 graphene FET array was selectively rPyB-doped.
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In Chapter 6, In conclusion, I have studied the organic – inorganic interface between organic rPyB molecular dye with monolayer molybdenum diselenide. I have analyzed the photobehavior of doped monolayer TMDC by incorporating into phototransistor. The rPyB doped MoSe2 phototransistor showed enormous enhancement compared to undoped MoSe2 due to trion formation in doped system, coupled with the conformity of the dopant to MoSe2 surface which facilitate smoother electron transfer across the interface.
In Chapter 7, a simple, but efficient and reliable, nitrogen-doping method via the reaction between the most commonly studied GO and primary amine containing molecules in a solution phase has been developed. This newly-developed doping method offers a powerful means to produce high-quality nitrogen-doped graphene nanoplatelets with the neutral point (Dirac point) located at around -16 V.
Furthermore, the graphene nanoplatelets have a high hole and electron mobilities as high as 11.5 and 12.4 cm2V-1s-1, respectively, in the short channel length (500 nm). The process developed in this study provides a simple solution method for large-scale production of high-quality nitrogen-doped graphene nanoplatelets for n-type FETs.
In Chapter 8, a new synthetic protocol for 2D PANI, which can be produced by ‘direct’ pyrolysis of organic HAB single crystals has been demonstrated. The 2D PANI has empirical formula of C3N (three sp2 C atoms sharing a tertiary N) at basal area. The atomic-level true 2D PANI structure was first realized, as confirmed by STM imaging. While DFT calculation suggested that 2D PANI had scant density of state at Fermi level as a metallic conductor, STS revealed intrinsic electronic nature of 2D PANI with a HOMO-LUMO gap of 2.7 eV. Upon doping with gaseous HCl at an elevated temperature (~160 °C), the 2D PANI flakes exhibited electrical conductivity of 1.41 × 103 S/cm which was two orders of magnitude higher than the best value of the doped linear PANI analogues reported to date.
The structure of 2D PANI is quite striking, because it contains uniformly distributed nitrogen atoms for multifunctionality.
Soft nanoelectronics is a rising research area with great potential in the electronics sciences. 2D nanomaterials, organic semiconductors and carbon-based electronic materials are promising building blocks and key materials. Examples of tailored organic electronic materials for the enhancement of photoresponsivity or charge carrier mobility are addressed in this thesis. As with many other areas of scientific attempt, continuous investigation will require the integration of multiple disciplines, including chemistry, electrical engineering, optics and material science.
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Acknowledgments
I am honored to receive my doctorate at Ulsan National Institute of Science and Technology (UNIST).
I could not do all of these research results with my strength and knowledge alone. Because many people helped me, I could do it all the way of the doctoral course to the end without worrying about my degree.
First of all, I am very grateful to Professor Joon Hak Oh, my supervisor. He gave me a lot of guidance during my graduate course with his lavish support and teaching. In addition, he gave me insightful answers on my research results and research process, and the direction of research on how these studies are meaningful for our research society. I would also like to thank Professor Jong-Beom Baek. He gave me a chance to do good research and I learned a lot about carbon materials through many collaboration with him. I would also like to thank Professor Byeong-Su Kim, my co-advisor. In addition, I would like to thank the rest of my thesis committee: Prof. Hyunhyub Ko, Prof. Sang Kyu Kwak for their encouragement and good advices.
During my Ph.D. course, if I did my research alone, it would remain impossible and I would have missed a tenth of what I have done so far. My driving force to study so far has been the encouragement of members of the Soft Nanomaterials and Devices Lab (SNDL) that helped me continue my research.
We are from different backgrounds, but we have come together to become an expert in what we do. The past days of experimenting, laughing, and contemplating together to solve a problem for that goal pass like a panorama in my head. I particularly would like to thank Moonjeong Jang, my labmate. We have been working in the lab for the last 5 years and We have been able to solve difficulties with the encouragement together. I also like to thank my teammates Cheol Hee Park and Yong Hee Kim. When I had a lot of work to do, they helped me next to me, and they did things better than I did what I could not do alone.
During the last five years of graduate studies, I have published 11 SCI-grade scientific journals, including five journals as first author. I have published journals including J. Am. Chem. Soc., Angew.
Chem. Int. Ed., Nature Commun., Adv. Funct. Mater., Proc. Natl. Acad. Sci. USA and Adv. Mater. to such a great journal publisher with the help of Professor Oh Joon Hak's guidance, help from co-worker and lab members. I could broaden my knowledge and gain my scientific knowledge through various national and international conferences. In addition, with the help of many people, I have been selected as the beneficiary of Global Ph.D. Fellowship of the National Research Foundation and can conduct research without financial difficulty during the degree course.
Finally, during my lifetime, I express my gratitude and love to God and my family, who have given me eternal love, support, and faith. My parents who always pray for me, Dong Un Lee, Young Sook Ju, and my sister, Joo Ri Lee, my sister, and Joo Sun Lee, thank you and love you. I realize that my doctoral degree has been fulfilled by their pray. Under God's plan, I want to move into another society. I will be a person who will be helpful to society without forgetting the valuable experience of my graduate school days.
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馣긿듫 鮓
띓鸯 黗馗듫 ꂓ심둣 깰쏯듗 깰馔싫驳 ꎣ싯 딇ꖚ騟 ꦨ긿심뒗꜏ 뭻ꉰ싫騟 ꆫ덇 딇 馣긿듫 鮓듗 늃ꀧ 끯떣덣꺯 馣쐟馓 깛ꘀ끈ꁛꁷ 먫듟 黗덣 ꂓ심둣 骏떨듗 끯딤싳 ꋟ 鷰鸫띓 닝듗 騖 馬ꃫ 깰쏯딇 鮋ꜿ驳 骏뎃 鹇馓 ꦨ긿심뒗꜏ ꦮ듗 꾫 딛듗鯟 ꔏꀧ 깰馔 鮋
댏덣꺯 鹇馓 떗馓馓 ꆳ 꾫 딛듗鯟 ꔏꀧ 깰馔딇 ꝡ딇 ꉷ덛끈ꁛꁷ 싫띓ꝟ ꝡ듓 ꉷ듫 ꅗ둓듏ꗯ 떯馓 딇ꖚ騟 ꦨ긿 심뒗꜏ ꦮ듗 꾫 딛騟 ꆯ 騖 馬끈ꁛꁷ
떓 떓듫 띓ꅗ 髣꾫ꁫ딇끳 뎷뚓심 髣꾫ꁫ鱫 띗끿듏ꗯ 馣긿꜏ 쇯싼ꁛꁷ 먫듟덣 黗 :3.89 싫驗 뎃髿딸심깰듗 끯딤듏ꗯ ꂌ끯 뎷뚓심 髣꾫ꁫ骏듫 딋뎃듗 끯딤듏ꗯ :3.89 덣 黗덣 딘심싫鯃 鯟띓 黗 ꅬ驗 黗 싫驗 ꅬ驗 뎃髿딸심깰듗 ꝷꨛ 맋馓싫ꠇ꺯 심ꬓ 끯떛 ꦼ심 ꋟ ꝛꁷ 뎃髿끷 깰쏯듗 싫뎓끈ꁛꁷ 먫듟덣ꀧ 髣꾫ꁫ鱫꺯 髣꾫 딗됼ꆫ끯驳 뎃髿끷듗 髿묨싫ꀧ 몛鯃 끯떛딇덇꺯 끷썫 싳 꾫 딸ꯗ馓 덙덇 ꁷ꜋ 뎃髿끷骏 骈ꅬ듏ꗯ 끷썫듗 띗쌜싫뎓ꀧꄃ 덇ꀣꃺ 뎃髿끷덣 딸ꯗ馓 ꝡ딇 ꉷ덇꺯驳 ꎣ 鮋ꗯꬓ뻃 뎃髿 驃骏딇 鸫뎷ꁛ 띓鮛 돓꺯 깰馔쌇 ꪇꠇ 딇 ꉳ 騖딇 馣긿싼ꁛꁷ 띓鮛 딇 鮓듗 늃ꀧ 끯떣덣꺯 髣꾫ꁫ듗 닛 띓 쐲꾫ꗯ 黗딇ꔓ 끯馗딇 띓鸫돧驳 黗ꅬ닛 髣꾫ꁫ鱫 뎃髿꜏ ꧃둋꾫 딛덛ꃫ 騖듓 떓덣騟 븃 묨ꪈ딇덛끈ꁛꁷ 떓덣騟 쑟꜀싯 뎃髿딣馓 ꆫ덇ꔏ驳 ꋟꗯꀧ ꁷ떨싫騟 ꋟꗯꀧ 덗싫騟 馓꜇멣 뚏껻띓ꝟ 鮋 꼠덣 떓덣騟 딫ꆫꔏꀧ 듫ꦋ馓 딛덛듟듗 ꁷ끯 싯ꨛ 鯻ꁾ騟 ꆼꁛꁷ ꉳ ꣏끿댤ꠇ덣 馣긿ꉯꜿꠃ 닱듏ꗯ ꉳ 싫ꀧ 딏덣 髣꾫ꁫ듫 馓꜇믻듗 ꪋꦮ닗 ꃧ둄 껄딸싫덿 쑟꜀싯 뎃髿딣馓 ꆫꅗꗰ 鼋ꖸ싫騳끈ꁛꁷ
떓듫 骈ꅬ 띓ꅗ 髣꾫ꁫ딇끳 鯓ꩤ꾫 髣꾫ꁫ덣騟ꅗ 鯝듓 馣긿듫 ꝣ늓 뎿Ꝑꁛꁷ 심뒗 骏떨덣 ꝡ듓 ꅗ둓骏 띓ꅗ꜏ 뚏끯驳 ꎣ싯 심뒗 鼏듫 끿긿 뒗둣딇 ꆫ껧꺯 떓덣騟 됼鯃돓 騼ꖷ 뚏끳 ꬓ덣 ꂓ쌇 떨ꝣ 馣긿듫 ꝣ늓 뎿Ꝑꁛꁷ 鮋ꜿ驳 떓덣騟 ꝡ듓 骈ꅬ 뎃髿 鯃쐟꜏
뚏끯驳 떓덣騟 똞듓 뎃髿 껄骏꜏ 鹏꾫 딛騟 馓꜇믻듗 뚏끳 ꧄똘ꨧ 髣꾫ꁫ鱫 馣긿듫 ꝣ늓 뎿Ꝑꁛꁷ 떓듫 떗骈딇 빗꼟鸫鼋꼟딿딋ꄃ 髣꾫ꁫ骏듫 骈ꅬ 뎃髿馓 덙덛ꃧꔏꠇ 떓듫 뎃髿 띓끰骏 ꧃驐딇 떨ꝣ ꝡ딇 싯떨ꆫ덇 딛덛듗 騖딘ꁛꁷ ꦨ긿심뒗끿긿뒗둣듏ꗯ 싻鱫 쌇뚏끳 驳쎗쎤 髣꾫ꁫ 骐깔魯 髣꾫ꁫ덣騟ꅗ 떨ꝣ 馣긿듫 ꝣ늓듗 ꉯꝐꁛꁷ 髣꾫ꁫ鱫꺯 똃덋骏 騼ꖷ馓 덙덛ꃧꔏꠇ 떓듫 뎃髿 ꦼ쌸딇 骏뎃 뎿ꦧ꜋ ꦼ쌸듏ꗯ 鸫닗馓驳 딛ꀧ띓 ꅟ닗 ꪏ 꾫 덙덛듗 騖딘ꁛꁷ 鮋ꜿ驳 떓돓 馬딇 骈ꅬ 뎃髿꜏ 띗쌜싯 /F[JJI 2FMRTTI ꦨ긿덣騟ꅗ 떨ꝣ 馣긿듫 ꝛ듟듗 쇯싼ꁛꁷ
떓듫 831) 딘심ꅬ鯃딋 떨딇덣騟ꅗ 馣긿듫 ꝣ듗 떗싫驳 낉끈ꁛꁷ 꺯ꗯ ꁷ꜋ 뎃髿 뚏떯ꗯ 뎃髿꜏ 띗쌜 쌛띓ꝟ 馔딣듫 딣ꜿ덣꺯 뫯꺳듗 ꁷ싫ꠇ ꋟꗯꀧ 꺯ꗯ ꅨ驳 뎃髿덣 ꂓ싯 驳물듗 싻鱫 딇댏鯃 鸫龗덛ꃫ 끯馗딇 떓덣騟 떨ꝣ 븃 씫딇 ꆫ덛끈ꁛꁷ
鮋ꜿ驳 둃ꜿ 83)1 ꟷꨗꉷ 떓쓿 뎃髿끷듫 몛ꂓ ꦼ딸딇ꠇ 둃ꜿ 뎃髿끷듫 鯃ꦫ듗 ꁷ뗋 鼦듓 닗ꜗ딇 鮠떨떔딋 씫骏 둖듟딇 ꝡ듓 쏋떨딇 뎃髿끷듫 鬃鯃 ꦫ딸딇ꠃ 鸫돓 ꅬ馤鹇鯃 믯髿 띓쎨딇 뎃髿끷듫 ꝟꀸ 쌇驃긿 뎇딇 馯鮋 껏뀷 麫믫ꠃ 髣꾫ꁫ鱫꺯 뒳딏싫騟 딿ꦟꀧ 믯髿ꔏ驳 밀싻 ꦮ듓 뒷쏋 똃됼싫ꠇ꺯ꅗ 닗딇ꊧ덇 麫믫ꠃ 떓돓 馬딇 끷썫듗 띗쌜 싫ꠇ꺯 덿ꕿꗯ ꝡ딇 ꅗ돓뚓 ꬓ긿꾫 먳쓿 딇떯 뎃髿끷듫 ꦼ딸딇 ꆫ덇 ꦧ귫騳띓ꝟ 딣鯃 ꝴ듓 딏덣 뫯꺳듗 ꁷ싫ꀧ 쌇ꔤ딇 똃됼싫띓ꝟ ꦒ듟딇 馓ꀧ 딋쏋 뎃髿끷 Ꝣ쎨딇끯ꠃ 鸻딇 싫띓 닝듓 딏덣 骏馣싫騟 뎃髿 딫싫끯ꀧ 뎷뎔 쎨ꁫ 뎿쌇 馬딇 똋던듗 싫騟 ꆫꠃ 뎛듫 ꦧ꜋
림싯 쐻듓딇 쌀깔 둖듏ꠃ 鸫돓 馬딇 2T8J 뎃髿꜏ 띗쌜싯 RTXVZNYT -FSZR 싼껄
151
뎃髿돓 ꧃ꉯꦏ뻇덣 딛덇 떨ꝣ 떗馓딇끳 =NFGT ꦨ긿 쌀깔 둖듏ꠃ 馬듓 심ꬓ 馬듓 鬃ꬓꂓ 묯끳딋 뎇떨떔딋 떓듫 ꎣ ꁷ꜋ ꬓ긿꾫 됼쓿 딏듗 麛 뎇끿씛 쌇 馓鷧늼 닎ꀧ 騖듗 딝驳 묯鮏싫ꀧ 쏠鯃 뎛듫 ꦧ꜇ꠃ 뎃髿끷듫 ꗯꝻ삄馓딇딋 깔띗딇 딣鯃馓 띗띯 똞닗싫驳 딿ꦋ딛듗 뎃髿꜏ 맑驳딣 鼋ꖸ싫ꀧ 똘쎗딇 묨髿ꅗ 딫싫驳 뎃髿ꅗ 뎇끿씛 싫ꀧ 딿쏫딇 鮋ꜿ驳 딇떯ꀧ 똋던싫驳 긿쐟덣 鸫馗 딇떗 83)1 ꟷꨗꉷ 딣뎃 ꅬ뎔 =NJS 髣꾫ꁫ 듓뎐 뒳띗딇 ꁷ떨딇 ꉳ ꟷꨗꉷ덣騟 馣긿듫 ꝛ듟듗 쇯싼ꁛꁷ
鮋ꜿ驳 떯馓 ꂓ심둣 깰쏯덣 딫 떔들싫騟 鯃ꅗ쌇 뚏끳 떨깔魳 긿ꁫ鱫 떨ꝣ 馣긿듫 ꝣ늓듗 뎿Ꝑꁛꁷ 뚏딏덣 髣쐟덣꺯 ꝟ鸫ꫛꠇ 딫싫驳 딛ꀣ鹣ꀧ 鮋 싯ꝛꊧ馓 ꝛ듟딇 떓듫 ꝛ듟덣 鯝듓 馣ꅬ듗 뚏ꠃ 뎃髿꜏ ꃧ둄 뎇끿씛 쌇댏騳ꁷꀧ ꝛ듟듗 뚏껻끈ꁛꁷ 鮋ꜿ驳 껄끷꾯ꪈ듟 髣쐟 멀黗쐟 쐟둣ꉷ 껄끷꾯ꪈ듟 髣쐟 띤긿ꁫ 鬟긿ꁫꉷ鱫 馣긿듫 ꝛ듟듗 쇯싼ꁛꁷ ឹ뎃髿ꀧ 멇ꖸ딇ꁷឺ ꔏꀧ ꝣꗯ 떓꜏ 鮌싯듏ꗯ ꡃ驳馓 떓듫 멇ꖸ듗 쌸깔 끯벯뚏끳 딇ꅬ쑗 닗떓늻 꾫뎔骏 뀷붏끯ꗯ 띓믳 뚗 ꜇ꀧ 멇ꖸ듗 싻鱫 븷둋 꾫 딛덇 떨ꝣ 馣긿ꉯꝐꁛꁷ 쌀깔 뎻쏧싯 ꝛ듟듏ꗯ 髣쐟 ꁷꁛ騳ꁷ 싫띓ꝟ 쌀깔 鸫뚤덣 ꁷꁟꁷꀧ 떓듫 떨끳떔 띓뚏 ꆫ끳 WJHT[JW^ 쐟꾫 쎨ꁫ 鮋ꜿ驳 떓듫 :3.89 ꅬ鯃 믯髿ꉷ 꼟쎗 쎗띓 딏뎔 ꇣ 鯃덈덣 鸻驳 馣긿ꉯꝐꁛꁷ :3.89 덣꺯 껄驐 骈ꬓ꜏ 딋ꅗ싫끯ꠃ 싻鱫 끳달듗 骈뒳쌇뚏끯驳 딇떯ꀧ 꺳髣긿ꁫ딇 ꆫ끳 떨꺳쓿 꺳髣긿ꁫ 髣꾫ꁫ 똃쎨뚓 髣꾫ꁫ 심髣 ꁷꁛꠇ꺯 鮋 듫 ꦒ듟듗 馬딇 鸫龟 꾫 딛덛ꃫ 끯馗ꉷ듓 驃볧 딝띓 닝듗 騖딘ꁛꁷ 鮋ꜿ驳 5489*(- 덣꺯 떓듫 뎙덣꺯 ꝡ듓 똃덋骏 鯃귻 끳달듗 ꪋꦮ騟 쌇뚓 쎗떨딇덣騟ꅗ 떨ꝣ 馣긿듫 ꝛ듟듗 쇯싼ꁛꁷ 셿쌀뚤달髣쐟덣꺯 ꝟ鸫騟ꆯ 馨띓릿 긿ꁫ ꦏ뎔딇 뒷떨딇 끯뎔딇 듓떨딇 쎯뎃 龗鸫 ꝃ 龗鸫 껋쎗딇 꼟ꜿ 빯끰딇 ꠘ쏋 듓뎇딇 쏼빯껀 띤긿ꁫ 깔둄쎨ꁫ 딿싗 쎨ꁫ ꇣ 馣긿ꉯꝐꁛꁷ
鮋ꜿ驳 떨ꝣ 긿ꔤ싫ꀧ 둃ꜿ 馓똄 닗ꨗ띓 덇ꁛ 龗鸫 ꅬ깰덣騟 떨ꝣ 馣긿싫ꁷꀧ ꝛ듟듗 떗싫驳 낉끈ꁛꁷ 떓듫 ꂓ심둣 깰쏯ꅬ닛 ꁷ긿ꁷ鸯싯 딏ꉷ딇 띤덣 딛덛띓ꝟ 꺯ꗯ馓 鯃ꅗ돓 긿ꔤ듏ꗯ 딫 딇騻鹇驳 꺯ꗯ馓 깉듫 떔덣 ꂓ쌇 ꠘ쏨씛 깇닗馓驳 딛듟덣 싫鸫ꁫ鱫 麛 馣긿꜏ ꉯꝐꁛꁷ 둃ꜿ ꇣ馓 뎔떔듏ꗯ 騇馨싫驳 싫ꙻ 싫ꙻ 깇닗馓ꀧ 떔骏 ꪇꔟ딇
덚딋띓꜏ 떨쏨씛 닟驳 딛듏ꁛ 떓ꅗ 떓듫 딣ꜿ덣꺯 떔딇 딛ꀧ 깉듗 깇닗馓ꀧ 듓骤딇馓 ꆫꅗꗰ 싫騳끈ꁛꁷ ꝛ띓Ꝝ듏ꗯ 딇 ꉳ 딏덣 떓꜏ 딇鷟덇 뚏끳 싫鸫ꁫ鱫 ꉳ 뎔骤듗 뎿Ꝑꁛꁷ
깇닗뎷ꠇ꺯 딇ꖚ騟 鹇 딋깰듫 떔딇ꔓ 騖듗 깰馔쌇ꪋ 끯馗딇 ꂓ심둣 ꋟ딇덛듟듗 鯃덈싫騟 ꆼꁛꁷ 덇ꍎ騟 싫ꠇ 鹇馓 긿쐟덣 ꅗ둓딇 ꆳ 꾫 딛ꀧ 긿ꔟ딋馓꜏ 驳ꦏ싫ꠃ 馣긿듫 鮓듗 ꝛ믫騳끈ꁛꁷ
黗 둧 딏 딇 듓 骤