Prof. Alis Seminar 07 june 2010

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From Vacuum Tubes to Nanoelectronics:

Contributions of Physical Electronics to

the

IT Revolution

Prof. Dr. Ali S. Hennache

Al-Imam Muhammad Ibn Saud Islamic University

Faculty of Sciences

Physics Department

AIMISIU – 2010 June 07th_{- ASH}

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2009/2010 Seminar Series

Prof. Dr. Ali S. Hennache

Speaker:

!

From Vacuum Tubes to Nanoelectronics:

Talk Title:

Contributions of Physical Electronics to the

IT Revolution

" Physics Electronics is a field of Engineering and Applied Physics that grew out of the " Physics Electronics is a field of Engineering and Applied Physics that grew out of the study and application of electricity. It manipulates the flow of electrons in a variety of ways and accomplishes this by using gases, semiconductors materials like silicon and germanium, and other devices like solar cells, light-emitting diodes (LED), lasers, and microwave tubes. The aim of Nanoelectronics is to process, transmit and store information by taking advantage of properties of matter that are distinctly different from macroscopic properties.

The talk focuses on the contributions of electronics to the information technology revolution from vacuum tubes invention to the new technology of nano. In simple terms, nanotechnology can be defined as

(3)

Physical Electronics and

Nanotechnology

§

“The 21st-century technologies -

g

enetics,

n

anotechnology, and

r

obotics (GNR) - are so

powerful that they can spawn whole new

classes of accidents and abuses. Most

dangerously, for the first time, these accidents

and abuses are widely within the reach of

individuals or small groups.”

(4)

Nanobio

Nanodots

Nanowires

Yow! It

is really

invisible

Nanowires

Nanoelectronics

Nanobots

(5)

The word nano is from the Greek word ‘Nanos’

meaning Dwarf. It is a prefix used to describe

"one billionth" of

It’s not biology, physics or chemistry. It’s all sciences that work with the very small.

Includes advances in all industries,

including the

electronic, chemical, 0.000000001.

"one billionth" of something, or

0.000000001.

(6)

Nanoscience and Nanotechnology

§

Fabrication, study and modeling of devices and structures where at least one

dimension is 200 nm or smaller.

§

convergence of physics, chemistry, materials science and biology

§

deals with the manipulation and characterisation of matter on length scales between the

molecular and the micron-size

Nanoscience

molecular and the micron-size

“Nanotechnology is the understanding and control of matter at dimensions of roughly

1 to 100 nanometers, where unique phenomena enable novel applications.”

“Encompassing nanoscale science, engineering and technology, nanotechnology

involves imaging, measuring, modeling, and manipulating matter at this length scale.”

Enables devices that are compact, portable, energy efficient, integrate sensing, and

carry out complex functions of a full-scale laboratory BioMEMS

Bio electromechanical systems

(7)

(8)

The Nanoscale

(9)

Size matters: scales, Miniaturization

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(10)

Size Matters

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,

(11)

History

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(12)

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Problem

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3

(14)

Nanotechnology and the Environment

4

5

6 #

.

4 Nanotechnology

7 Pollution prevention

Treatment

(15)

(16)

What is an assembler?

Speculations

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(17)

Introduction to Nanotechnology

(18)

How to fabricate Nanostructures?

2 principal approaches

How to fabricate Nanostructures?

2 principal approaches

(19)

There are two ways to build

a house…...

There are two ways to build

a house…...

$

%

(20)

There are two ways to

make tools...

There are two ways to

make tools...

$

%

(21)

miniaturisation.

(22)

Arranged one way,

atoms make up soil, air

and water. Arranged

another way they make

up strawberries or

smoke.

!

(23)

Conclusions

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(24)

CMOS

Alternative devices

tu

CMOS IC evolution

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CMOS: past and future

Life With and After CMOS: Towards Hybrid CMOS

Life With and After CMOS: Towards Hybrid

CMOS--SET IC Architectures?

SET IC Architectures?

Alternative

Transition Region

Quantum devices

Atomic dimensions

(25)

8

50nm 35nm

node

150nm

1y _2y

ITRS: close to

ITRS: close to 10

10nm

nm wall

wall

1995

2000

2005

2010

2015

2020

1998

2000

2002

2004

year of production

R

(37nm) (28nm) (18nm) (13nm)

(...) MPU gate length

90nm 65nm 45nm 32nm 22nm (9nm)

3y

4y

(26)

200 CMOS: 15nm channel length

CMOS: 15nm channel length

< =

2 2

< =

Key problems of MOSFET

for sub

for sub--10nm channel length

10nm channel length

0

100

0

0.2

0.4

0.6

0.8 Drain Voltage (V)

D

Emerging architectures:

G

2 .

2 .K8 @

2 @

.K8 @

(27)

(micro

(micro--)electronic switch

)electronic switch

Aggressively

miniaturized CMOS

+ emerging devices

Quantum

nanoelectronic devices

With CMOS

After CMOS

Life

Life with

with and

and after

after CMOS

CMOS

Solid state

nanoelectronic devices

Molecular

electronics

Quantum

dots

Spin

transistor

SETs

SEMs

Carbon

nanotubes

Small

conductive

(28)

l

à

impact on the basic physical principles of MOSFETs

l

à

Single Electron Transistors ?

l

Important:

Important: CMOS and SET are complementary and

CMOS and SET are complementary and

NOT in competition

_à

replacement strategy is wrong!

Conclusion

NOT in competition

_à

replacement strategy is wrong!

à

l

92 hybrid CMOS/SET

hybrid CMOS/SET

:

(I)

(I) development of

development of

CMOS

CMOS--SET technological platform

SET technological platform

(II) enable advanced

SET/CMOS co

SET/CMOS co--simulation and design

simulation and design

(III) innovation on

new functionality

of hybrid IC architectures,

tolerant to background charge effects

(29)

(30)

§

Microelectronics

§

L

§

.

§

Photonics

§

,

§

.

§

Nanotechnology

§

,*

(31)

Strong Laboratory Support and

Rich Tradition

Strong Laboratory Support and

Rich Tradition

.

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(32)

Outline

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(33)

Introduction

§

A

§

B ,

Q

O

§

O

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8 ;

Nanotechnology

(34)

(35)

Nano-Scale MOSFET

Three terminal device

Source, gate and drain

Vg controls the conduction from source to drain

Half thickness of the gate is called “Feature size

Half thickness of the gate is called “Feature size λ

λ”

”

Current feature sizes in production

Current feature sizes in production –

– 90nm (Intel Pentium 5)

90nm (Intel Pentium 5)

Demonstrated feature sizes up to 20nm (IBM).

(36)

6

6 §

Difficulties

§

High electric fields

§

Power supply vs. threshold voltage

§

Heat dissipation

§

Interconnect delays

§

Vanishing bulk properties

§

Shrinkage of gate oxide layer

§

Shrinkage of gate oxide layer

§

Too many problems to continue miniaturization as physical

limits approach

§

Proposed solutions are short term

§

Open Problems

§

Improve lithographic precision (eBeam)

§

Explore new materials (GaAs, SiGe, etc.)

(37)

Carbon Nanotubes

§

Carbon nanotubes are long meshed wires of carbon

§

Longest tubes up to 1mm long and few nanometers thick made by IBM.

§

Longest tubes up to 1mm long and few nanometers thick made by IBM.

Property

Carbon Nanotubes

Comparatively

Size

0.6 0.6--1.8 nm in diameter

1.8 nm in diameter

Si wires at least 50nm thick

Strength

45 Billion Pascals

Steel alloys have 2 Billion P.

Resilience

Bent and straightened without damage

Metals fracture when bent and

restraightened

Conductivity

Estimated at 10

99

_A/cm

22

_{Cu wires burn at 10}

66

_A/cm

22

Cost

(38)

Electrical Properties of CNT

Carbon

Carbon nanotubes

nanotubes can be metallic or semiconductor

can be metallic or semiconductor

depending on their

!

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is defined as the vector from one open end

of the tube to the other after it is rolled.

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(39)

Carbon Nanotube FET

CNT can be used as the conducting channel of a MOSFET.

.

CNT can be used as the conducting channel of a MOSFET.

These new devices are very similar to the CMOS FETs.

All CNFETs are pFETs by nature.

nFETs can be made through

Annealing

Doping

Very low current and power consumption

Although tubes are 3nm thick CNFETs are still the size of the contacts,

about 20nm.

(40)

CNT Fabrication

§

Controlling the conductivity of the tubes (Constructive

Destruction)

§

All tubes laid on the contact

.

§

All tubes laid on the contact

§

Metallic tubes are destroyed

§

Controlling diameter of the tube

§

Start with MWNTs.

§

Destroy the outer layers one by one to reduce diameter.

§

Placing exactly at the required location. Yet to be demonstrated

convincingly to exploit complete advantage using Lithography.

§

Using DNA for self assembly

(41)

Summary and Challenges

§

CNTs are flexible tubes that can be made conducting

or semiconducting.

§

Nano-scale, strong and flexible.

§

Challenges:

§

Multilevel interconnects not available

§

Chip density still limited to the density of contacts.

§

Tube density not entirely exploited

§

Fabrication is still a stochastic process

§

Fabrication is still a stochastic process

§

Alternatives to gold contacts need to be found.

§

Open Problems and Initiatives:

§

Fabrication using DNA for self assembly (Technion-Israel;

Science,

Nov 2003)

§

Memory array of nanotubes using junctions as bit

storages (Lieber at Harvard)

§

Using nanotube arrays to make computing elements

(DeHon at Caltech)

(42)

Conclusion

§

CMOS technology is approaching

saturation – problems in the

nanometer range

§

Several new possibilities emerging

§

Several new possibilities emerging

§

Carbon nanotubes (CNT)

§

Single-electron transistor (SET) and

quantum dots (QD)

(43)

Single Electron Transistors (SET)

§

Conductance changes in spurts as energy levels are discrete

Drain

Source

Gate

C

g

Island

§

Conductance changes in spurts as energy levels are discrete

§

To go from conducting to non-conducting stage, it requires voltage

sufficient for one electron to cross

§

This is achieved by applying gate bias enough for just one

electron charge -- hence the name SET

§

Bias required for conduction is

coulomb gap voltage

§

Same device can act as pFET or nFET based on the barrier strength

§

Applications:

§

Extra sensitive charge meters

(44)

Nanotechnology

in Field of Electronics

Nanotechnology

in Field of Electronics

§

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A

(45)

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(46)

Why smaller products?

(47)

Moore’s Law (1964)

(48)

Integrated Circuits

(49)

Multidisciplinary MEMS/NANO science

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(53)

Classification of Nanomaterials

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(54)

Human Hair

Nanotechnology

: Size and Scale

Plant and Animal Cells

Most Bacteria

0.18µm

Lysozyme

Carbon

Nano

Nano--tubes

tubes

(55)

fo

Evolution of Technologies

Vacuum Tube

Technology

Phones

The Internet

Nanotechnology

“Wearable” Wireless

Internet Appliances

Molecular Electronics

Nano

Nano--Robots

Robots

P

1900

1950

2000

2050

Technology

(56)

Branches of Nanotechnology

Electronic Nanotechnology

Micro

Micro--Mechanical

Mechanical

Systems (MEMS)

Electronic Nanotechnology

Microfluidics

& Bio

(57)

(58)

Intersection of Three Areas

(59)

Our Proposal

(60)

Nano-wires

1 1 23

1 0

(61)

(62)

Conclusions

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6.K8

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(63)

Carbon Nanotubes

§

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,

(64)

#

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5 Who Invented Nanotechnology?

Who Invented Nanotechnology?

#

*

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(65)

History of transistor

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E 3

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B

(66)

(67)

E

co S

oc

ie

ty

Clean alternative energy sources

,$ !

( #)

DNA Electronics

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Nanotechnology service to our

society

Nanotechnology service to our

society

Fundamental

Nanotechnology

Healthy society Fuel cells for portable

equipment Fuel cell drive cars

Nanoelectronics

Photonic crystals

Quantum computers

Nanophotonic circuits

Radiation neutralizers

Remote explosive identification

Biological and chemical neutralizers

% +

Nanobiology Protein chips Tailored diagnosticsGenes therapy

$ , %

(68)

Computer Circuits

§

6 §

.

§

6 Nanotechnology is applied to

the reduction in the size of these

(69)

How will nanotechnology

change the world?

Two views

four perspectives

A -

Nanotechnology leads to radical discontinuity

1-

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B -

No radical discontinuity, but continued incremental

progress

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(70)

Because, paraphrasing Neils Bohr:

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(71)

1 Evolution of IT infrastructure

1 General-purpose mainframe and minicomputer era: 1959 to present

1 6798 &

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1 67:9

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1 Personal computer era: 1981 to present

1 6786

&

1 8< 7<

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1 Client/server era: 1983 to present

1 +

% +

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%

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1 , % +

%

(,

)

(72)

Eras in IT Infrastructure Evolution

(73)

1 Evolution of IT infrastructure (cont.)

1 Enterprise Internet computing era: 1992 to present

1 !

%

% +

1 Cloud Computing: 2000 to present

1 %

!

%

!

(74)

(75)

A

(76)

Moore’s Law and Microprocessor Performance

(77)

Falling Cost of Chips

An Intel® processor today can contain as many as 1 billion transistors, run at 3.2 GHz and higher, deliver over 10,000 MIPS, and can be

(78)

The Capacity of Hard Drives Grows Exponentially 1980

The Capacity of Hard Drives Grows Exponentially

1980--2007

2007

(79)

some good and bad things

about an assembler

some good and bad things

about an assembler

(80)

!

Questions???