Symbol VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Parameter Symbol Typ Max
t ≤ 10s 32 40
Steady State 60 75
Steady State RθJL 17 24
A mJ
°C -55 to 150
-20 60
W
±25
-80
A V -10.5
-8 3.1 2.0
Maximum Junction-to-Lead C °C/W
Thermal Characteristics
Units
Maximum Junction-to-Ambient A °C/W
Maximum Junction-to-Ambient A RθJA °C/W
-30 Absolute Maximum Ratings TA=25°C unless otherwise noted
Continuous Drain Current A
Units Parameter
TA=25°C TA=70°C
V Maximum
ID
Gate-Source Voltage
PD Power Dissipation A TA=25°C
Drain-Source Voltage
Pulsed Drain Current B
Junction and Storage Temperature Range TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
30V P-Channel MOSFET
Product Summary
VDS = -30V
ID = -10.5A (VGS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) 100% UIS Tested
100% Rg Tested
General Description
The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
-RoHS Compliant
-AO4435 is Halogen Free
SOIC-8
Top View Bottom View
D D
D D
S S
S
G G
D
S
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ = 55°C -5
IGSS ±100 nA
VGS(th) -1.7 -2.3 -3 V
ID(ON) -80 A
11 14
TJ=125°C 15 19
15 18
27 36
gFS 22 S
VSD -0.74 -1 V
IS -3.5 A
Ciss 1130 1400 pF
Coss 240 pF
Crss 155 pF
Rg 1 5.8 8 Ω
Qg(10V) 18 24 nC
Qg(4.5V) 9.5
Qgs 5.5 nC
Qgd 3.3 nC
tD(on) 8.7 ns
tr 8.5 ns
tD(off) 18 ns
tf 7 ns
trr 25 30 ns
Qrr 12 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
VGS=0V, VDS=-15V, f=1MHz Input Capacitance
Output Capacitance
Turn-On Rise Time Total Gate Charge
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω
Turn-Off Fall Time Turn-On DelayTime
mΩ
SWITCHING PARAMETERS
Gate Source Charge Gate Drain Charge Total Gate Charge
VGS=-10V, VDS=-15V, ID=-10A DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance VGS=0V, VDS=0V, f=1MHz IS = -1A,VGS = 0V
VDS = -5V, ID = -10A VGS = -5V, ID = -5A VGS = -10V, ID = -10A RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS = VGS ID = -250µA VDS = -30V, VGS = 0V VDS = 0V, VGS = ±25V Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs Drain-Source Breakdown Voltage
On state drain current
ID = -250µA, VGS = 0V
VGS = -10V, VDS = -5V VGS = -20V, ID = -11A
Reverse Transfer Capacitance
IF=-10A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev7: Nov. 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0 20 40 60 80
0 1 2 3 4 5
-VDS (Volts)
Figure 1: On-Region Characteristics -ID (A)
-6V -8V
-10V
-4.5V
0 20 40 60 80
0 1 2 3 4 5 6
-VGS(Volts)
Figure 2: Transfer Characteristics -ID(A)
25°C 125°C
VDS= -5V
5 10 15 20 25 30 35 40
0 5 10 15 20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Voltage
RDS(ON) (mΩΩΩΩ)
VGS=-10V VGS=-5V
VGS=-20V
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics -IS (A)
25°C 125°C
0.6 0.8 1.0 1.2 1.4 1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
5 15 25 35 45 55
2 4 6 8 10 12 14 16 18 20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage RDS(ON) (mΩΩΩΩ)
ID=-11A
25°C
125°C VGS= -4V
VGS=-10V ID=-10A
VGS=-5V ID=-5A
VGS=-20V ID=-11A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0 2 4 6 8 10
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics -VGS (Volts)
0 500 1000 1500 2000
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF) Ciss
Coss
Crss
1 10 100 1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction- to-Ambient (Note E)
Power (W)
0.001 0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) ZθθθθJA Normalized Transient Thermal Resistance
0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) -ID (Amps)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
100µs 10ms 1ms 100ms 10s DC RDS(ON) limited
TJ(Max)=150°C TA=25°C
10µs VDS=-15V
ID=-10A
Single Pulse D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
Ton T PD In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C TA=25°C
VD C
Ig
Vds D U T
VD C
V gs
Vgs
Q g
Q gs Q gd
C harge G ate C harg e Test C ircuit & W aveform
-
+ -
+
-10V
Vgs Vdd Id
Vgs Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds
L
- +
E = 1/2 LIAR AR2
BVDSS
IAR
Ig Vgs
- +
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & W aveforms
Vds - Vds +
dI/dt
R M rr
Vdd Vdd
Q = - Idt
trr -Isd
-Vds
-IF
-I DUT VDC Vdd
Vgs Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
- +
Vgs
Vds
t t
t
t t
t
90%
10%
r on
d(off) f off
d(on)
