Tgp chi Khoa hgc Tntang Dai hgc Cdn Tha Phdn A: Klioa hgc Tu nhien. Cong nghi \d Mdi Intang: 30 (2014): 20-2:
Tap chl Khoa hoc Tru'dng Dai hgc Can Thd website: sj.ctu.edu.vn
MO PHONG TRANSISTOR HIEU U'NG TRU'CING DAY NANO KEM OXIT
Nguyen Thanh TiSn' va Tr3n HdngNghTa^
' Khoa Khoa hgc Tu nhien, Tnrdng Dgi hoc Cdn Tha
^ Hoc vien ego hqc. Khog Khoa hoc Tu nhien, Truang Bai hgc Cdn Tho Thong tin chung:
Ngdy nhdn: 17/06/2013 Ngdy chdp nhdn: 25/02/2014 TUle:
A simulation of zinc oxide nanowire field-effect transistors Tir khoa:
Mo phong. ddy nano, tran-zi-to hiiu img trudng, dgc tuyen Von-Ampe. cdu hinh cue cong, oxit kem Keywords:
Simulation, Nanowire, Field- Effect Transistor, Volt- Ampere characteristics, gate configuration, zinc oxide
ABSTRACT
We report the simulation results of the field-effect transistor (FET) with various gate structures in order to find the FETs having the best electrical properties. We changed the "gate configuration" with different arrangement gates (single-gate, double-gate, ordinary triple-gate. Pi-gate, omega-gate and gate all around (GAA)). Based on the simulation data, we drawn the Volt-Ampere characteristics lines (I-V). Then, we calculated the physical parameters affecting the operation of FETs including, threshold voltage, subthreshold slope, saturation currents, the on-off current ratio.
Our simulations showed thai the gate all around structure has better properties than the other structures, especially this structure restricts the short-channel effects.
Chung toi bdo cdo cdc kit qud mo phong transistor hieu irng trudng vai nhiiu cdu true cong khdc nhau nhdm tim ra FET co dgc tinh dien tot nhdt.
Chiing toi thay doi "hi cue cong" voi cdc cdch sdp xep cue cong khdc nhau (mot cong. hai cong. ba cong thudng, cong dgng n, cong dgng £1 vd cong bao vong quanh). Dua vao kit qud mo phong Id bo dir lieu so. chimg toi ve cdc ducmg dde tuyin Von-Ampe (I-V). Sau dd, chung toi tinh cdc thong so vdt ly dnh hudng den hogt dong cua FET gom: diin dp ngudng, do doc dudi ngudng. dong diin bao hoa, ty li dong diin d trgng thdi md vd trang thdi dong. do ddn truyin. Chung toi ^hi nhgn dugc rdng. cdu true cong bao vong quanh cd nhieu tinh chdt toi uu han cdc cdu true cong khdc, dac biit Id no hgn chi dugc hieu irng kenh ngdn.
1 GIOITHlfU
Transistor Id ngn tdng ciia nhieu thigt bi dien tu hign dgi. Transistor ra ddi nam 1947 tai Bell Labs do ba nhd khoa hgc John Bardeen, Walter Brattain vd William Shockley tim ra dl thay thg bdng dign tu edng kinh. Cae thiet bi dien tu ngay cdng cd xu huong nhd hon va ddi hdi phdi hoat ddng nhanh hon, mgt trong nhOng vigc gidm kich thudc thigt bi ia gidm kich thudc cua transistor. Lue ddu transistor chi la linh kien vat lieu khdi vdi idp chuyin tilp p-n cua vat ligu Si pha tap, den nam 1960 transistor oxit kim logi higu iing trudng ddu
tign dugc chg tgo trgn ngn Si va lay SiO: ldm chdt each dign. NhiJng thiet bi dien tii chay cang nhanh thi so lugng transistor tren mdt chip thudng phai cdng Idn. Nam 1965, Gordon Moore da tien dodn rang cd mdi hai nam mat dd transistor trong cac chip se tang len gdp ddi [1]. Theo thai gian. chung ta thdy rang su tien doan eua Moore la phi hgp, vi thg nd dugc ddt la "dinh ludt Moore".
Tuy nhien viec thu nho transistor trong nhung nam gdn day gap nhilu trd ngai khi kich thudc cua vdt ligu d vao khoang nano met. Su thu nhd cua linh kien Idm chieu dai cua kenh cung thu hep ddn
Tap chi Khoa bpc Tntang Dgi hgc Cdn Tha Phdn A Khoa hgc Tit nhien. Cong nghi va Mdi tnnmg: 30 (2014): 20-25 ddn din xudt hien hieu ung kgnh ngdn. Nhung van
dl eua hieu ung kenh ngdn diudng gap phai nhu sy rd ddng dign, nhiet do tang cao. Han nfla, khi vat ligu tien din kich thuoc nano thi xudt hign nhimg hign tUOTig vdt ly mdi nhu van ehuyin dan dgo va higu ung ehui ngdm, vdn dl quang khdc eun| dnh hudng (mgt ky thudt quan trgng trong ehe tgo chip). Nhflng hien tugng ndy lam dnh hudng ldn din viec hien thue cdc Uansistor d kich thudc nano.
Nhu vgy cdn cd edc cdu true mdi, vat lieu radi dat tinh diuc thi cao hon. Kem oxit (ZoO) la mdt trong nhflng vgt lieu ddy ttiln vgng de thay thi Silic trong cac transistor higu iing trudng. Gan ddy, vdt ligu ZnO mgt chilu chdng hgn nhu thanh nano hay day nano dd dugc nghien ciJru de su diing trong cde transistor thay thi cho mang mdng bdng Si thdi^
thudng [2]. Cdc nghien cuu transistor hieu ung trudng dua trgn day nano (NWFETs) ZnO cd tinh khd thi vl do linh dong dien tu, do dde dudi ngudng vd ti le ddng-md ddng dien da dugc xdc nhdn [3]. E)l md ta cac dac tinh va gidi han boat dgng cua nhflng transistor mdi nay, mo hinh chinh xdc la rdt quan trgng. Trong nghign cmi nay, chung toi su dyng mgt cdng cu duge cung edp bdi Dai hgc Purdue vd dugc tdi trg bdi du an nanoHUB [4].
Cdng cy nay cd ten Id Multi-gate Nanowire FET, cho phep chiing ta nhdp vao edc dac tinh, tinh chdt cua ZnO, thdng qua cdng cu md phdng chiing toi thu dugc edc dde tinh dien vd cdc thdng so linh kign limg vdi cdc kidu cdu tnie khae nhau cila FET vdi cdc cdu hinh cue edng khde nhau (tu mgt cdng din bdn cong). Chiing tdi so sanh, phdn tich cac ket qud va nit ra cac ket ludn ddi vdi NWFETs ZnO.
2 MO HINH VAT LY CUA HE NGHIEN ClTU
Nhu thdo lugn d phdn tren, viec gidm kich thudc FET ldm tdng higu iing kgnh ngan, hay lam dg doc dudi ngudng vd dien dp ngudng thay ddi.
Nhflng higu ung kgnh ngdn xuat phat tii su mdt tdc dyng digu khien ciia cue cdng do cd tdn tai dign trudng gifla cue ngudn va cue mang. Nhieu thg he linh kign mdi da dugc phdt trien nhdm logi bd nhflng dnh hudng cua trudng ndy, nhu lam day vimg ngheo trdn ldp each dien bdng each dg dien trudng xuygn qua ldp oxit bi chdn viii tnrde khi anh budng dgn kgnh. Tuy nhign, khi ldp oxit bi chdn viii cang mdng, se lam tang dign dung tilp giap va xudt hien nhimg hieu ung khdi [5]. Mdt giai phdp gidi quygt cho vdn dg nay la sii dyng nhieu cdng. nghia la thilt kl eac cdng trdn cac mat bgn ciia kgnh. De khdo sdt nhung anli hudng eua hg cac edng ddi vdi thuc thi linh kien. chiing tdi su dung edc kich thudc Iinh kign gidng nhau vd thay
ddi su sap xep cue cdng, Chilu dai cue cdng, Lg.
vd chigu dai kenh, Lc, dugc ddt la 50 nm. Oxit eye cdng cd do day 1 nm va kich thudc ddy nano dugc ehgn la do rdng W vd do eao T diu bdng 25 nm, cho cae linh kien ndy hogt dgng 6 nhigt dg phong (300 K). Day nano md phdng la ddy ZnO logi n theo hudng [i o To ]- Hinh 1 la minh hga tiet dien ngang cdc hg cdng khdc nhau cua FET gdm hg cong don (single-gate), edng ddi (double-gate), edng ba (Triple-gate) gdm cd cong dang TI (Pi-gate) vd edng dang n (omega-gate), cdng bin (Quadruple-gate), vd cdng vdng quanh (Gate-All- Around-GAA).
Cue cong •
ZnO • Oxitbi , chon viii
- Oxit Cue cone
Kieu cong don
1 ilL
Cac kilu cdng doi
injog
Cac kieu cdng ba
Cac kieu cong vong quanh Hinh 1: Md hinh cac cau true cue cdng
khae nhau
Tap chi Khoa hoc TmangDai hoc Cin Tha Phdn A: Khoa hoc Tir nhiin. Cong nghi va Moi Iraang: 30 (2014): 20-25 3 CAC KET QUA M 6 PHONG
3.1 Mo hinh cdng don
FET he cgn^ don gi6ng vcri nhOng FET tniySn th6ng CO cue c6ng phia tren (Hlnh 2). Mo phong 6 dSy duoe thuc hiin vol cac thong s6 nhu do day lop oxit cong dtrgc dat la 1 nm, do day va chik rOng lop oxit chon viii phia duoi duoe dat l&i lirot la 50 nm va 30 nm.
Oxit cong
Hinh 2: Md binh cdng don Hinh 3 la ket qua mo phong dac tuygn Id-Vg cua mpt ZnO NWFET c6ng don vdi su thay d6i di?n ap cue mang Vd= 0.25; 0.5; 0.75 ya IV. Chiing tdi xac djnh dugc dp giam rao thi bdi cue mang (Drain Induced Barrier Lowering: DIBL) tir hai duong dac tuyin Id-Vg (vdi Vd=0.75 V va Vd=0.25 V) CO gia trj la 100 rnVW. Day la mot gia tri hiong . ddi ldn va khdng mong mudn. Ddng dien "ON", \t„
thu duoe la 6.95x10-' A tai Vg=0.5V (Vd=0.75V), trong khi ddng dien "OFF", I„«=1.97 xlO"* A do t?i Vg=-0.5 V (Va=0.75 V). Ti le Io./I„ff thu dugc k h o ^ g 35.3, gia ui nay rat thSp.
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—•—Vd = 0.25V Vd = O.SOV - A _ V d = 0 75V - * — V d = 1.00V
tign bdi Sekigawa va Hayashi nam 1984 [6]. Md hinh duge vg d Hinh 4.
Oxit cdng
Hinh 4: M3 hinh cdng ddi Chung tdi md phdng NWFET ZnO hai cdng vdi dg ddy ldp oxit giua hai cue cdng va Idp kenh day nano Id 1 nm (nhu dd su dung vdi hg mdt cdng d mue trdn). FET hai cdng nay cho thdy su truyin dan da dugc cdi thien nhung khdng dang kl, ben e ^ dd ddng dign duge digu khiln vin con thdp.
Ket qud md phdng cho ta dae tuyin Ij-Vg thi hign trong Hinh 5 ung vdi nhung thay ddi dign dp c\re mang tir 0.25 V den 1 V v i vdi ddng di$n bao hda cue mdng thu dugc khodng 2.23xl0-* A so vdi gid tri 1.85x10"* A cua FET mdt cdng. Ddi vdi su thay ddi dien dp cue cdng khoang gid tri IV (tiJ -0.5 V din 0.5 V), ta thu dugc ti le lon/Ioff khodng 958 vdi Vd=0.75 V, cao ban khodi^ 27 ldn so vdi FET mgt edng.
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- • - V d = 0.25V Vd = 0.5(W
— ' - V d = 0.75V - • - V d = 1 . 0 D V
Hinh 3: Bie tuyen Id-Vg ciia NWFET ZnO mgt coDg ihig vdi cdc gia trj Vd khae nhau 3.2 Md hinh cong ddi
Mdt phuong phdp de gidm bigu ung kgnh ngdn khi giam kich thudc FET Id viee su dgng nhilu cue edng, cdu triic hai cdng da dugc phat mirdi ldn ddu
Hmh 5: Dac tuyin Id-Vg cua NWFET ZnO hai cdng img vdi cdc gia trj Vd Idiac ehau 3.3 Md hinh ba cdng
He ba cdng la thdm mgt cue cdng khdc so vdi he h ^ edng, vi thi kgnh ddn dugc bao bgc ba ben bdi eac dign cue cua cue cdng (Hinh 6). Transistor
Tgp chi Khoa hpc Tntang Dgi hgc Cdn Tha Phdn A: Khoa hpc Tu nhien. Cong ngh? vd Moi tntang- 30 (2014): 20-25 Si ba cue cdng ddu tign dugc phdt triln bm Intel
vdi nhung edi tiln trong dilu khiln ddng dign va giam dang kl ddng dien rd d ttang thdi tdt (off- state) so vdi FET mdt cdi^ [7].
Oxit cong
Hinh 6: Md hinh ba cdng Chiing tdi md phdng NWFET ZnO ba cgc cdng cd dd ddy Idp oxit cue cong Id 1 nm bao xung quanh kenh va do ddy ldp oxit bi chdn viii la 10 nm d$t d mat thii tu eiia kenh. E)d thi bigu diln cae dae myln U-Wg thu dugc trong Hinh 7. Khi thay ddi di?n dp cue cdng Id IV (tii -0.5 V din 0.5 V), ti le loo/IofT thu dugc khoang 7.3 xlO^ da duge do d Vd=0.75 V. eao hem khodng 762 ldn so vdi FET hai cong.
£-3
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^ . . . —
r ^ - * ^
- • - V ( I = 0-Z5V V d = 0 5 0 V - * - V d = 0 7 5 V
-.-.vd=i oov
Hinb 7: ©jc tuyin Id-Vg cua NWFET ZnO ba cu-c clng thuwng ung vdi cac gia trj Vd
khae nhau 3.4 Md binh cong d^ng TE
Mdt cdu tnic khae ciia FET lien quan din hg ba edng da dugc nghien cuu dg loai bd higu ung kgnh ngdn la cdu trie cdng dang TI (Hinh 8). Cdu true nay cd hai cdng dge hai bgn vd mdt cgc cdng phia tren ciia kenh dan, cd mdt phdn md rgng ciia cue
cdng ben dudi kenh bdn ddn sau vdo tdp oxit bj ehdn viii. Dieu nay ^up bdo ve kgnh trdnh dign tnidng thdng ciia cue mang vi thg linh kien thuc thi tdt hon. Cau tnic cdng' dang ir dugc cho Id dg chl t^o hon cdu true dang edng vdng (se dl e|lp phdn sau), cdu trdc nay chi ddi hdi bd sung thgm m§t man ehdn vd thue hien phan ung khdc ion Idp oxit chdn vLii dn mdn trong cdc budc chl t^o transistor thdng thudng [8].
Hinh 8: Mo hinh cdng djng tt Cdu ttiic NWFET ZnO dugc md phdng dang cdng ndy ed do day ldp oxit la 1 nm bao xung quanh kgnh nhu eau tnic ba cdng d phan tren, va do ddy ldp oxit bi chdn vui la 10 nm. Phan md rdng vudng gde cua cue cong xuyen xudng ldp oxit bi ehdn viii dugc dat Id 4 nm. Cdc dudng dde tuyen Id-Vg thay ddi ddi vdi NWFET cdng Pi dugc md td ttong Hinh 9 cho thdy mdt do dde dudi ngudng d^t duge khodng 67 mV/decade. Khoang dien ap cyic cong tij -0.5 V din 0.5 V da dugc sii dung dh. tinh dugc ti lg lon/Ioff la 1,5 xIO^ vdi gia tri Vd=0.75 V.
Did tri nay cao ban so vdi FET ba cong thong thudng.
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- « - V ( i = 0 . 2 W V d = 0.50V - . - V d = 0.75V
— V d = 1.0(W
Hinh 9: BSc tayen Id-Vg cua NWFET ZnO cire cdng d^ng 7t ihig vdi cac gia trj Vd Idiac nbau
TQP chi Khoa hgc Tntang Dgi hpc Cdn Tha
3.5 Md hinh cdng dang Cl
Cau ttiic cdng dang Q (Hinh 10) gdn gidng nhu cua edng dang Pi, vl ban chdt cd hai linh kien diu Id hg ba cong vdi mdt dien cue md rdng xudng phia dudi ed tac dung giam higu ung kgnh ngdn. Tuy nhign, nhiing linh kien cdng d^ng fi cd phdn ben dugc che sdu vao kenh phia bdn ttong vi thi cdu ttiic ndy gdn gidng vdi cdu tnic cdng vdng quanh se ttinh bdy d muc sau. Nd la edu tnic trung gian gida hg ba cdng va be bdn cdng. Cdu tnic ndy cung hdp dan vi qua ttinh chl tao tuang ddi dan gian so vdi dang cdng vdng/cdng bdn [9].
Phdn A: Khoa hgc Tv nhiin. Cong nghe va Moi tnrdng: 30 (2014): 20-25 kgnh nhu linh kign hai edng, ba cdng, cdng dang K va cdng dang fi dat dugc kdt qud tdt hon ttong thuc thi linh kien, bg cue cdng bao vdng quanh (GAA) (Hinh 12) dugc mong dgi, bdi nd cho ta sir dieu khien tdt nhdt cua cue edng vdi kgnh tii nhimg cue cdng xung quanh tten tdt ed eac mdt eua kenh.
vdi gid tri truygn dan cao han vd ban chg hieu ttng kgnh ngan tdt hon dugc mong dgi [10].
HiBh 10: Md hinh cdng d^iig Q NWFET ZnO cdng dang 0 md chiing tdi md phdng ed kleh thudc ddy nano la dd rdng W= do cao T Id 25 nm vdi do day Idp oxit cdng Id 1 nm (gidng nhu cde hg phia trudc) vd dg day ldp oxit bi chdn vui Id 5 nm. Phdn cue cdng md xudng phia dudi kgnh Id 11 nm. Cdc dudng dde tuyin Ij-Vg thu duge ttgn Hinh 11 eho chiing ta thdy FET boat dgng d chg dg ngheo vd gid tti SS vdo khodng 61 mV/deeade, gdn gidng nhu linh kign FET cdng dang TT. Khodng dien dp cue edng tir -0.5 V den 0.5 V vdi Vit=0.75 V, chung tdi thu dugc ti 1? lon/Ios la 3.95x10*, ldn gap hai lan gid tti nay cua FET cdng dang 71.
"1 ^^^l^p^^ —•—Vd = 0 2SV Vd = 0.50V
~i~-Vd = 0 7SV
—»—Vd-1 OOV
Hinh 11: Ofc tuyin Id-Vg cua NWFET ZnO cue cdng d^ng O ihig vdi cdc gia tri Vd khae nhau
3.6 Md hinh cdng bao vdng quanh Vi?c bd sung nhiing cue cdng d cdc ben cua
Hinh 12: MS hinh cong bao vdng quanh Trong phan nay, chiing tdi md phdng Iinh kien NWFET ZnO cdng bao vdng quanh ddy nano cung cd dudng kinh 25 nm (gidng nhu nhihig he trude day) vdi mdt ldp oxit ddy 1 nm (gidng nhu ttong nh&ng hg trudc) d ddy cae cdng trgn tdt ed bin mat ben eiia kenh dugc ndi chung. Hmh 13 md td cde dudng dae tuyin Ij-Vg ddi vdi sy thay ddi dien dp cue mang khodng tCr 0.25 V din 1 V cho thdy FET hpat ddng d chg do ngheo vd dg dde dudi ngudng khoang 53 mV/decade tai Vd=0.75 V. Ddi vdi dign dp cue mdng Vd=0.75 V, ti le WUff duge xac djnh ttong khodng thay ddi dign dp tiJ -0.5 V din 0.5 V la 1.74x10'. Gia tti ndy tdt ban so vdi cdng dangfi.
V,{V)
Hinh 13: Dac tuyin Id-Vg ciia NWFET ZnO cue cdng d^ng bao vdng quanh tmg vdi cac gia tri
Vd Idiac nhau
Tir cac kgt qua md phdng ehung tdi ciing tinh thgm cac thdng so dde trung khdc vd so sdnh cdc gid tri ciia chiing tuong ung vdi cde kieu edng khde nhau ligt ke d Bdng 1.
Tgp chi Khoa hoc Tntang Dgi hoc Cdn Tha Phdn A: Khoa hgc Ttr nhien. Cong nghe vd Moi tntang 30 (2014): 20-25 Bang 1: Cac kit qua mo phdng cua mot s6 thong st v^t ly dac trimg cua FET irng vdi cac Itilu cong
khdc nhan
Cac thdng so vat Iy Cong dtfn
Cong ddi -0.46 -0.33
Cdng Cdng Cdng Cdng hao ba dgng IE dgngQ vongqaanh
176 107
Dien dp ngudng Vft(V) Dg dde dudi nguong, SS (mV/decade) khi Vd=0.75 V
Ddng bdo bda, WIO-* A) 1.85 2.23 logoff 35.3 958 Do ddn tmyin &n(10^ jiSlum) 1-35 1.56
70 67 61 53
1.94 1.24 5.91 7.33 7.3x10' 1.5x10* 3.95x10* 1.74x10'
4.15 4.31 4.45 5.44 Tit cac ket qua ttong Bang 1, chiing ta thdy
rdng tinh thgc thi linh Idgn dd dugc cdi thien tir FET cd cdu tnie mdt cdng den edu tnic GAA. Dign dp nguong thay doi khdng nhigu, dn dinh quanh - 0.3 V. Kit qua md phdng ghi nhdn cd su cai thien ddng ke cdc gid tri eiia do dde dudi ngudng thay ddi tir 176 mV/decade den 53 mV/decade khi tang sd edng. Vigc chg t^o nhieu edn^ da loai bd dan dugc ddng dien d trang thai tdt (ofP-state) khi khodng dao ddng dign dp cue cong khdng ddi. Ti Ig ddng dien lon/Ioff dugc tang cudng khodng sau bde dg Ion tir 3.5 dgn 1.74x10* khi tang sd cdng. Tuy nhign. ddng dign d tt^ng thdi md (on-state) vd bao hda thi ed gid tri thdp theo ket qud md phdng, day Id nhiing gia tn dan tmyen binh thudng. Trong khi do, ddng bao hda Idss tdng Idiodng 6 Idn va dd dan truygn gn, tdng ign khoang gdn 4 ldn, khi chiing ta tdng sd cdc cgc cdng Ign.
4 KET LUAN
Vdi vigc Sli dyng cdng ey Multi-gate Nanowire FET, chiing tdi dd nghien eiiu cdc cdu tnic dnh hudng din tinh thuc thi ciia NWFET ZnO. Chiing tdi thay ddi cdc he cue cdng khae nhau nhdm cd gdng tim ra edu tnie toi mi cho NWFET ZnO.
Chiing tdi khdo sal sau cdu tnic cue cdng khdc nhau (mdt cdng. hai edng, ba cdng. cdng dang n, cdng dang fi vd cdng bao vdng quanh). Chung toi ghi nhdn duge rdng ttansistor hieu ling trudng ddy nano ZnO vdi cdu tnic cdng bao vdng quanh cd tinh thue thi tot nhdt ttong cde edu tnic chiing tdi md phdng.
Dg tim edu tnic tdi uu hon chiing tdi cdn tilp tue nghien eiiu md phdng theo hudng gidm dudng kinh dd>" nano, thay ddi chigu ddi kdnh ddn. khdo sdt dg CO ngang cue cdng vd thay ddi ly ]? chilu ddi va chieu rgng kenh dan. Han thi, viee nghien ciiu md phdng theo cde hudng phdn cue khdc nhau cua vdt lieu ZnO ciing edn thiet.
TAI L i f u THAM KHAO
I. Thompson, S. E.. Parthasarathy, S., Moore's
Icru' the future of Si microelectrics.
Materials today, 9, 20, (2006).
2. Ju, S., Lee, K., Yoon, M. H., Facchetti. A., Marks, T. J., Janes, D. B., High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: Effects ofmeid contacts and ozone treatment,
Nanotechnology, 18, 1, (2007).
3. Park, W. I., Kim, J. S., Yi, G., Bae, M. H., Lee, H., Fabrication cmd electrical characteristics of high-performance ZnO nanorod field-effect transistors. Applied Physics Letter, 85, 5052, (2004).
4. nanoHUB - Multi-gate Nanowire FET (2008).
(https://www.nanohub.org/resourees/2704).
5 Colinge, J., Xiong, W., FETs and Other Multi-Gate Transistors, Springer US, (2008).
6. Sekigawa, T.. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate. Solid State Eleettonics, 27, 827, (1984).
7- Auth, C . Allen, C , et al, A 22nm High Performance and Low-Power CMOS Technology Featuring Fully-Depleted Tri- Gale Transistors, Self-Aligned Contacts and High Density MIM Capacitor, IEEE Transactions on Nanoteehnology, 131, (2012).
8. Park, J. T, Colinge, J. P., Diaz, C. H., Pi- gate SOIMOSFET, IEEE Electton Device Letters, 22,405, (2001).
9. Li, v.. Chou, H. M., Lee, L W., Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs, IEEE Transactions on Nanoteehnology, 4,510, (2005).
10. Song, J. v., Choi, W. Y., Park, J. H., Lee, J. D Park, B. G., Design optimization of gate-all- j around (GAA) MOSFETs, IEEE Transactioii^;
on Nanoteehnology, 5, 186, (2006). •
