Index of /intel-research/silicon
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QCA Quantum cellular automata RAM Random access memory R&D Research and development RSFQ Rapid single flux quantum (logic) RTD Resonant tunneling diode.. TCAD
y 300mm capacity is coming on 300mm capacity is coming on - - line rapidly to support line rapidly to support Intel’s microprocessor roadmap. Intel’s
New Materials, Devices Extend Si Scaling Gate Gate Silicide Silicide added added Channel Channel Strained Strained silicon silicon Changes Changes Made Made Future Future
Table 3. The carbon depletion, however, does not fully account for the increase in k. TOFSIMS also indicates that the silanol content in the film doubles upon e-beam exposure
Architectural Choices for ST Device Test Pattern Generator Timing and Format Pin Electronics Device Interface Memory Depth, Speed Power Supplies Speed, Flexibility, Accuracy
y Seek and scan can be the lowest cost but involves new Seek and scan can be the lowest cost but involves new memory storage and sense mechanism. memory storage and
Reduced cost is one of the big attractions of integrated electronics, and the cost advantage continues to increase as the technology evolves toward the production of larger and
Academic Relations Program, India Intel® Innovation In Education Intel India.
