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Strained silicon provides 10-20% transistor drive current boost 10-20% is ~half generation transistor performance gain Intel is ramping 90 nm CPU products using strained
• High performance logic technology has scaled at a rapid pace down to the 90 nm generation, providing significant gains in density
QCA Quantum cellular automata RAM Random access memory R&D Research and development RSFQ Rapid single flux quantum (logic) RTD Resonant tunneling diode.. TCAD
Continued improvement in device and short channel performance will require further gate oxide scaling below 0.8nm, which will require the use of an alternative gate dielectric
• Nanotechnology could deliver critical materials to Nanotechnology could deliver critical materials to support Silicon Nanotechnology. support
Table 3. The carbon depletion, however, does not fully account for the increase in k. TOFSIMS also indicates that the silanol content in the film doubles upon e-beam exposure
To study the effect of ILD material, thermal stresses were measured on Cu damascene line structures of 0.4 and 0.2 µ m linewidths integrated with SiOF, carbon doped oxide CDO
¾ Since 1999, 3 Million Intel scrap wafers have been converted to 2.4 Million solar cells. ¾ Produce 11.4 Million Kwh of