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Brian L. Harrison

Brian L. Harrison

Corporate Vice President

Corporate Vice President

General Manager

General Manager

Fab/Sort Manufacturing

Fab/Sort Manufacturing

September 16, 2003

September 16, 2003

I DF M a nufa c t uring

I DF M a nufa c t uring

U pda t e

(2)

I nt e l’s M a nufa c t uring

I nt e l’s M a nufa c t uring

Le a de rship

Le a de rship

y

y

Scale:

Scale:

Leading edge capacity, investment, & people

Leading edge capacity, investment, & people

y

y

Agility:

Agility:

Customer Responsiveness

Customer Responsiveness

y

y

Operational Excellence:

Operational Excellence:

Disciplined execution & continuous improvement

Disciplined execution & continuous improvement

Scale Scale

Agility Agility

(3)

Scale Scale

I nt e l’s M a nufa c t uring

I nt e l’s M a nufa c t uring

Le a de rship

Le a de rship

y

y

Scale:

Scale:

(4)

Scale Scale

I nt e l’s 3 0 0 m m Fa b Sit e s

I nt e l’s 3 0 0 m m Fa b Sit e s

Ireland Ireland

Fab 24

Fab 24

Oregon Oregon

D1C/

D1C/D1DD1D

New Mexico New Mexico

Fab 11X

Fab 11X

Arizona Fab 12 announced as next

300mm fab for 65nm

90nm

90nm

65nm

65nm

Dev

(5)

Scale Scale

I nt e l’s 3 0 0 m m fa bs

I nt e l’s 3 0 0 m m fa bs

D1C (OR) D1C (OR)

130nm production running (yields > 200mm)130nm production running (yields > 200mm)

90nm process validated and shipping pre90nm process validated and shipping pre--production samplesproduction samples

Fab 11X (NM)Fab 11X (NM)

130nm production running (yields > 200mm)130nm production running (yields > 200mm)

90nm tools & process in checkout (on track); production in Q490nm tools & process in checkout (on track); production in Q4

Fab 24 (IR)Fab 24 (IR)

90nm facility ready; installing tools (on track); production in 90nm facility ready; installing tools (on track); production in 2004

2004

D1D (OR)D1D (OR)

65nm facility and tools online; development underway (for 65nm facility and tools online; development underway (for

production in 2005) production in 2005)

Fab 24 (IR) & Fab 12C (Arizona) are next in line for 65nm Fab 24 (IR) & Fab 12C (Arizona) are next in line for 65nm

(6)

I nt e l’s M a nufa c t uring

I nt e l’s M a nufa c t uring

Le a de rship

Agility Agility

Le a de rship

y

y

Scale:

Scale:

Leading edge capacity, investment capability & people

Leading edge capacity, investment capability & people

y

y

Agility:

Agility:

(7)

Done Done

Agility

Agility

N e w T e c hnology Ra m p Le a de rship

N e w T e c hnology Ra m p Le a de rship

1 3 0 nm M a nufa c t uring Ca pa c it y

1 3 0 nm M a nufa c t uring Ca pa c it y

F20 F20 Done Done D2 D2 Done Done F22 F22 Done Done F17 F17 Done Done

1 3 0 nm 1 3 0 nm Proc e ss Proc e ss

Other. 3 Other. 3 Done Done D1C D1C Done Done F11X F11X

1 3 0 nm

1 3 0 nm

Proc e ss

Proc e ss

(3 0 0 m m )

(3 0 0 m m )

(8)

Agility Agility

9 0 nm c a pa c it y ra m p

9 0 nm c a pa c it y ra m p

Intel 0.13um

Intel 0.13um

Intel 90nm

Intel 90nm

F11X

F11X

D1C

D1C Ramping 90nm faster with only Three 300mm fabs!

D1C

D1C

F24

F24

F11X

F11X

WSPW

WSPW (200mm (200mm Equivalent)Equivalent)

Q

Q Q+1Q+1 Q+2Q+2 Q+3Q+3 Q+4Q+4 Q+5Q+5 Q+6Q+6 Q+7Q+7

(Quarter in Ramp) (Quarter in Ramp)

**Source: Intel Estimates

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Operational Operational Excellence

Excellence

I nt e l’s M a nufa c t uring

I nt e l’s M a nufa c t uring

Le a de rship

Le a de rship

y

y

Scale:

Scale:

Leading edge capacity, investment capability & people

Leading edge capacity, investment capability & people

y

y

Agility:

Agility:

Customer Responsiveness

Customer Responsiveness

y

y

Operational Excellence:

Operational Excellence:

(10)

I nt e l Y ie ld M a t c hing T hrough

I nt e l Y ie ld M a t c hing T hrough

Copy Ex a c t ly

Operational Operational Excellence Excellence

Copy Ex a c t ly

Month

Log (Die Yield)

0.5µm (3 fabs)

0.35µm (3 fabs)

0.25µm

(3 fabs) 180 nm

(5 fabs)

(11)

Y ie ld T re nd

Y ie ld T re nd

1997 1998 1999 2000 2001 2002 2003 2004

Defect Density (log scale)

(12)

Operational Operational Excellence

Excellence

Copy Ex a c t ly! M e t hod

Copy Ex a c t ly! M e t hod

Matching At All Levels

Same Physical Inputs

Statistically Matched

Responses (Outputs)

Keeping Matched

Coordinated Changes

Audits

Process Control System

Joint Fab Mgmt Structure

Product:

-Yield -Reliability

Module:

-CD’s -SEM -Visual -Electrical

Equipment/Process: -Etch/Dep Rates -Thicknesses

-Particles -Film Comp

Physical Inputs:

-Recipes -Chemicals -Clean room -Facilities -Gases -Equipment

Better Quality and Faster Improvements

Better Quality and Faster Improvements

(13)

Sum m a ry

Sum m a ry

y

y

Intel’s manufacturing leadership (through scale,

Intel’s manufacturing leadership (through scale,

agility, and operational excellence) will enable a

agility, and operational excellence) will enable a

rapid transition to our 90nm products

rapid transition to our 90nm products

y

y

300mm capacity is coming on

300mm capacity is coming on

-

-

line rapidly to support

line rapidly to support

Intel’s microprocessor roadmap

Intel’s microprocessor roadmap

y

y

Intel’s 90nm technology ramp is underway and on

Intel’s 90nm technology ramp is underway and on

track

(14)

1

(15)

Fa b1 1 X 9 0 nm St a t us

Fa b1 1 X 9 0 nm St a t us

Scale Scale

Inline Monitors

Full Loop Short route 1 Short route 2 D1C Mean

Referensi

Dokumen terkait

• High performance logic technology has scaled at a rapid pace down to the 90 nm generation, providing significant gains in density

PCI - - (X) (X) Bridge Bridge InfiniBand* InfiniBand* Bridge Bridge I/O I/O Bridge Bridge Scalability Scalability Port Switch Port Switch Scalability Scalability Node Node

QCA Quantum cellular automata RAM Random access memory R&D Research and development RSFQ Rapid single flux quantum (logic) RTD Resonant tunneling diode.. TCAD

Continued improvement in device and short channel performance will require further gate oxide scaling below 0.8nm, which will require the use of an alternative gate dielectric

Table 3. The carbon depletion, however, does not fully account for the increase in k. TOFSIMS also indicates that the silanol content in the film doubles upon e-beam exposure

Intel’s Transistor research down to 10nm Experimental transistors for future process generations. Experimental transistors for future

y Seek and scan can be the lowest cost but involves new Seek and scan can be the lowest cost but involves new memory storage and sense mechanism. memory storage and

Academic Relations Program, India Intel® Innovation In Education Intel India.