KHOA H O C - C O N G N G H C
-So 10/2015
V
A n h hu'dng ciia mat dp va nang Itfofng ion d^'n tinh chat cua mang Ti-DLC phu
bang phtftfng p h a p plasma tang ctfoTng
• T h S . NCS. LE VAN AN
Trudng Dgi hgc SUphgm Ky thu$t TP. Hi Chi Minh
• PGS. T S . BUI XUAN L A M
Trudng Dgi hgc Cing nghi TP. Ho Chi Minh T o m tat: Viic oanh tgc cua cdc ion len bi mit
mdng trong qud trinh phu mdng bing phUdng phdp plasma cd thi anh hadng nhieu din tinh chat cua mdng carbon giing kim caong (DLC) cung nhu cdc mdng composite cd nin cac-bon giing kim cUdng. Mtfc di oanh tgc cua cdc ion ci thi dugc gia tdng bing 2 cdch. Thtf nhit Id tdng thi diin trin vgt dn phO (di). Thtf hai Id sd dgng cdc cuin day diin ttf (UBM-colls) dUtfc bi tri tren cdc cathode nhim tdng mtfc di tip trung electron, ttfdd tang mit di ion din bi mit mdng trong qud trinh phQ. Bdi bdo trinh bdy inh hudng cua cudng di plasma do thay doi ding diin trin cuin ddy den cdc tinh chit cua mdng Ti-DLC phu bing phUdng phdp plasma hda hgc.
T f l k h d a : CUdng di plasma, tfnh chit mdng Ti-DLC phd, plasma hda hgc.
Abstract: The intensity of lon bombardment strongly influences on the properties of diamond-like carbon (DLC) and diamond- like carbon based composite thin films. The bombardment intensity can be increased by two ways: increasing substrate bias voltage or using UBM-colls, which are installed at the cathodes. The UBM-colls increases the flux of ions due to entrapment of more electrons.
This paper stresses on the influence of plasma intensity (due to current on the UBM-colls) on the properties of Ti-DLC thin films deposited via plasma enhanced chemical vapor deposition (PECVD).
Keywords: Intensity plasma, Ti-DLC film properties covered, plasma chemistry.
I . G i d i t h i ^ u
M d n g mdng cd n d n cac-bon g i i n g kim cfldng c d c d c tfnh chdt d$c bidt thich hpp cho cdc flng d y n g c h l n g mdn trong ky t h u ^ t (dd cflng eao, dO n h d m b l m9t thdp, khd ndng tfl bbi trdn do hi^n t f l p n g graphit hba) [1,2]. Cdc flng d y n g chdng m d n cDa logi mang nay da dflpc cdng b l trdn n h i l u c d n g trinh khoa hpc [3, 4 ] . Mdng cac-bon g i i n g kim cfldng vd composite ed n i n cac-bon gidng
kim Cfldng cd t h l dflpc phu len ede ehi tiet bang phflpng phdp vdt ly (PVD) hoac hda hpc (CVD) [5]. Trong d b , phfldng phap hba hpc cd plasma tang cfldng dflpe sfl d y n g rpng rai n h i t . c a e hd thdng phiin xg magnetron eb tfl trfldng ddng dfldc s f l dyng rbng rai trong ky thudt phCi mdng m b n ^ cac-bon g i i n g kim cfldng vdi hieu qud cao va ehat Iflpng mang tdt. Ben egnh eac nam chdm vTnh c f l u , cde cubn ddy d i ^ n tfl (UBM-colls) Id thdnh phdn quan trpng d l tgo ndn mbt he thdng phun xg_ magnetron cb tfl trfldng dbng^dflpe b l trf trdn m l i cathode cOa hd t h i n g . Tit trfldng khdp kfn tao ra nhd ede cubn ddy ndy se "day" cdc electron tfl cac vj tri ian cdn vdi cathode den vi trf ciia d l , t f l dd lam tdng mat dO plasma d vung ndy. Ddng didn edp cho cudn ddy edng Idn thi vide gia tang mdt dd plasma cdng cao ddn tdi vide oanh tge c u a ion Idn b l m$t eua mdng cdng manh ll^t ( v l cd s l Iflpng ion vd ndng Iflpng ciia moi ion), tfl dd Idm thay d l i cac tfnh chat ciDa mdng dflpc phii. Bai bdo trinh bdy mdt s l dnh hfldng c i i a ddng didn tren cudn ddy den cde tinh chdt eua m d n g .
2. Thl n g h i g m
Mdng composite ed n i n cac-bon gidng kim cfldng phCi tren cdc tdm Si eb dfldng kinh 10cm bang hd thdng phiin xg magnetron Teer-UDP cd 4 magnetron. Sd d l eCia hd thong dflpe md td nhfl Hinh 2.1.
Hinh 2.1: Sd do hi thing phu mdng Tl
Trong nghidn cflu nay, i a - 2 bia TIC doi didn nhau v d i
n
d ^ tinh k h i l t 9 9 , 9 9 % dflpc s f l d y n g d l phiin x g trong '• mbi trfldng C . H , vd Ar v d i t9 Id C.H^ / ( C , H , + Ar) Id 1/4. C d n g sudt dp tren cac bia Id 500W, dp sudt trong qua trinh phii dflpc duy tri khdng d l l d 0,3Pa. Mat dd ion dflpc xac dinh bdng ddu d d Langmuir b d tri trong budng phii & cdc vj tri khde nhau. Chieu ddy vd mat cat c i i a mdng dflpe xac dinh bdng kinh h i l n vi didn tfl SEM Philips FEG-XL30. D d cflng vd md-dun d a n hdi eOa mdng dflpc xde dinh b d n g t h i l t bj do dd cflng nano XP v d i c h i l u sdu mui do d n vao mdng khbng qud 2 0 0 m m .53
KHOA H O C - C O N G N G H I 3. Ket qud va thdo iu^n
Hlnh 3.1 t h l hidn tl 1^ gifla cdc phan tijf lon vd trung hda tgi vj tri ddt ddu db vdi cdc gid tri dbng didn trdn cudn ddy khde nhau. Neu khdng cd dbng dien t r d n c u d n ddy cathode thi gdn nhfl khdng cd s f l ion h d a v a t^ Id gifla ion va trung hda nhd hdn 0,25. Khi cd d d n g d i d n , ty Id ndy tdng mgnh t^ Id t h u l i n v d i ddng didn. Trong c d hai trfldng hpp ( I A v d 2 A ) , ty s d ion/trung tinh dat cfle dgi d khodng cdch 50 - 100mm trnh t f l cathode dong nghTa vdl m^t d | plasma Idn nhdt S eac vj tri nay. Vdi mat dd plasma ldn, s d Iflpng Idn cdc ion (chD y l u Id A r ) dflpc gia tdc vd oanh tgc b l mat cDa mdng phu (dang ddy d d n len).
Hinh 3.1:
Ty li gltfa ion vd cdc phin ttf trung hda diin tgl cdc vi tri khdc nhau trade cathode vdi cdc gid tri ddng diin khdc nhau Mat edt eae mdng phu trdn cdc tdm SI d cdc ddng didn khdc nhau trdn cubn ddy dfldc t h l hien trdn HIrih 3.2.
C-H (do mat dd plasma cao 6 vung d l ) v d n m i m hdn so vdl TIC trong mdng khi phii d c h l dd dbng didn tren cudn ddy cathode Idn.
Hinh 3.3: Anh hadng cua ddng diin trdn cupn ddy cathode den di cCmg ci}a mdng
C d t h l nhdn thdy vide tdng cfldng db ddng d i ^ n trdn c u | n ddy lam tdng nSng Iflpng va mat db
Hinh 3.2: M$t dt ngang cua mdng Ti-DLC phQ trin Si d cdc gid tri dong diin khdc nhau trdn cuin ddy cathode (a) - OA, (b) - IA, (c) - 2»
c a c mdng cb cdu true te vi dgng cdt tflpng tfl nhfl nhau. Do che dp phii d ddng dien khdng doi (DC sputtering) nen ndng Iflpng cua cae phdn tCf tgo mdng khdng du Idn (ehf khodng vdi eV) [ 5] de ngdn ehan vi§e hinh thdnh edu trtic hinh cdt. Tuy v | y , cdu t n i c c i i a eac mdng la tflpng ddl sit chat.
Db ddy cOa mdng trong vdng 2 gid phu do dflpe trdn ede mau flng vdi dbng dien OV, I V va 2V ldn Iflpt Id 2 , 1 , 2,3 vd 2,45mm. v i d e tdng tde dd phCi khi tang ddng didn cathode dflpc gidi thich bdi s f l gia tdng m§t dp plasma 6 khu vflc d e , tfl dd lani gla tang mflc dd tdp trung va ngflng dpng trdn be mat d l cua hydroeaebon.
Db cflng cua cae mdng d o b d n g nanoindenter dflpe the hien trdn Hinh 3.3. 0 ddng dien OA, dd eflng dgt gid tri ldn nhdt (18GPa), tdng dbng didn se Idm gidm dO cflng c i i a m d n g . 6 ddng di$n I A , dd cflng cua mdng Id 16GPa. Tdng ddng didn Idn 2A, dO cflng cua mdng ch? edn 12Gpa. D i l u nay dflpc gidi thich bdi viec hinh thdnh n h i l u hdn n e n
plasma trdn be mdt ciia d l nhflng d c h l dd phii PECVD vdi nguon DC trong nghidn cflu ndy, ndng Ifldng cua cdc phdn tfl dfldc gia t i e khdng d ^ ldn de ngan ehan cdu t n i c te vi hinh edt eua mdng vd gia tang d d c f l n g cua m d n g ; ngflpc Igi, dp cflng bi gidm do n h i l u C-H trong n e n eOa mang dupc hlnti t h d n h . C u n g vdi v i ^ e tang ndng Ifldng oanh tgc trdn be mat mang nhflng n l u dung phfldng phdp tang the didn trdn vdt c a n phu bang n g u i n cb t i n s d radio (RF) thl k i t q u d se ngflpc Igi: Mdng se cflng hfln va tdc dd bj gidm di. K i t qud nay da dflpc tde g i d cbng b d trong cdng trinh [6,7].
4. K^ lu$n
Thay d l i ddng dien tren cudn ddy cathode se thay doi mdt dd va n§ng Iflpng plasma trdn be mat d l , tfl dd ldm thay doi c d c tinh chd't eCia mang Ti-DLC. Mdt dp plasma Idn nhat t^i vj trf edeh bia khodng 50 - 100mm. Khi phu bang n g u i n DC, tdng d b n g dien khdng lam thay doi cdu true t l vi cCia mdng Ti-DLC. Ve c d b d n , mang vdn gifl edu true hinh cdt tflpng d d i sit chdt. Tuy nhien, tdng dbng dien se lam gidm dp cflng ddn d i n gidm tfnh chat chdng mai mdn c i j a mang •
T a i l i g u t h a m k h d o
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[21. Y.Liu, A. Erdemir, E.I. Meletis (1996), An investigation of the relation ship between graphitization and friction behavior of DLC coatings. Surface and Coatings Technology 86-87.
[3]. A. Matthew, S.S Eskildsen (3/1994), Engineering applications for diamond-like carton.
Diamond and Related Materials.
[4]. K. Hormberg, A. Matthews (1994), Coatings tribology, Tribology series 28.
[5]. Y. Catherine (1991), Preparation techniques for diamond-like carbon, in "Diamond and diamond like films and coatings", p.l 93, Ptenum Press, New York.
[6]. S. Zhang, X L.Bui, Y.Q. Fu (2003), Magnetron sputtered hard a-C coatings of very high toughness.
Surface and Coatings Technology.
[7]. BCii Xudn Lam (2009). Ung suit dUcOa mdng mdng cacbon giing kim cddng phu bing phddng phdp phOn xa, s l 8, Tgp chf GTVT.
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P G S . T S . P h a n V d n Q u d n
