Index of /intel-research/silicon
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PCI - - (X) (X) Bridge Bridge InfiniBand* InfiniBand* Bridge Bridge I/O I/O Bridge Bridge Scalability Scalability Port Switch Port Switch Scalability Scalability Node Node
Continued improvement in device and short channel performance will require further gate oxide scaling below 0.8nm, which will require the use of an alternative gate dielectric
Opportunities and Challenges for Future High-Performance and Low-Power Computational Applications”, Proceedings of Technical Papers, 2005 I EEE VLSI -TSA I nternational Symposium
• Nanotechnology could deliver critical materials to Nanotechnology could deliver critical materials to support Silicon Nanotechnology. support
Table 3. The carbon depletion, however, does not fully account for the increase in k. TOFSIMS also indicates that the silanol content in the film doubles upon e-beam exposure
To study the effect of ILD material, thermal stresses were measured on Cu damascene line structures of 0.4 and 0.2 µ m linewidths integrated with SiOF, carbon doped oxide CDO
An approach to measure the cohesive strength of brittle low k films is presented, in which residual stress, elastic modulus and film thickness, are considered.. The importance
Intel’s Transistor research down to 10nm Experimental transistors for future process generations. Experimental transistors for future
