Index of /intel-research/silicon
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Strained silicon provides 10-20% transistor drive current boost 10-20% is ~half generation transistor performance gain Intel is ramping 90 nm CPU products using strained
PCI - - (X) (X) Bridge Bridge InfiniBand* InfiniBand* Bridge Bridge I/O I/O Bridge Bridge Scalability Scalability Port Switch Port Switch Scalability Scalability Node Node
Continued improvement in device and short channel performance will require further gate oxide scaling below 0.8nm, which will require the use of an alternative gate dielectric
y 300mm capacity is coming on 300mm capacity is coming on - - line rapidly to support line rapidly to support Intel’s microprocessor roadmap. Intel’s
New Materials, Devices Extend Si Scaling Gate Gate Silicide Silicide added added Channel Channel Strained Strained silicon silicon Changes Changes Made Made Future Future
An approach to measure the cohesive strength of brittle low k films is presented, in which residual stress, elastic modulus and film thickness, are considered.. The importance
Intel’s Transistor research down to 10nm Experimental transistors for future process generations. Experimental transistors for future
¾ Since 1999, 3 Million Intel scrap wafers have been converted to 2.4 Million solar cells. ¾ Produce 11.4 Million Kwh of
