Index of /intel-research/silicon
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• High performance logic technology has scaled at a rapid pace down to the 90 nm generation, providing significant gains in density
Specifically, we have shown that (a) Si nanowires offer no transistor CV / I performance advantage over conventional Si transistors at room temperature, likely due to the
Opportunities and Challenges for Future High-Performance and Low-Power Computational Applications”, Proceedings of Technical Papers, 2005 I EEE VLSI -TSA I nternational Symposium
y 300mm capacity is coming on 300mm capacity is coming on - - line rapidly to support line rapidly to support Intel’s microprocessor roadmap. Intel’s
New Materials, Devices Extend Si Scaling Gate Gate Silicide Silicide added added Channel Channel Strained Strained silicon silicon Changes Changes Made Made Future Future
To study the effect of ILD material, thermal stresses were measured on Cu damascene line structures of 0.4 and 0.2 µ m linewidths integrated with SiOF, carbon doped oxide CDO
¾ Since 1999, 3 Million Intel scrap wafers have been converted to 2.4 Million solar cells. ¾ Produce 11.4 Million Kwh of
Reduced cost is one of the big attractions of integrated electronics, and the cost advantage continues to increase as the technology evolves toward the production of larger and
